INFINEON SPI21N10, SPP21N10, SPB21N10 User Manual
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Preliminary data SPI21N10
SPP21N10,SPB21N10
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
Type Package Ordering Code
SPP21N10 P-TO220-3-1 Q67042-S4116
SPB21N10 P-TO263-3-2 Q67042-S4102
P-TO263-3-2 P-TO220-3-1P-TO262-3-1
Marking
21N10
21N10
Product Summary
V
DS
R
DS(on)
I
D
100 V
80 m
21 A
SPI21N10 P-TO262-3-1 Q67042-S4117
21N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Continuous drain current
TC=25°C
T
=100°C
C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=21 A , VDD=25V, RGS=25
Reverse diode dv/dt
IS=21A, VDS=80V, di/dt=200A/µs, T
jmax
=175°C
Gate source voltage V
Power dissipation
TC=25°C
Symbol Value Unit
I
D
I
D puls
E
AS
dv/dt 6 kV/µs
GS
P
tot
A
21
15.0
84
130 mJ
±20
V
90 W
Operating and storage temperature T
T
,
j
stg
-55... +175
IEC climatic category; DIN IEC 68-1 55/175/56
Page 1
°C
2002-01-31
Thermal Characteristics
Preliminary data SPI21N10
SPP21N10,SPB21N10
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
F)
R
R
R
thJC
thJA
thJA
- - 1.7 K/W
- - 62
-
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V
(BR)DSS
100 - - V
-
-
62
40
Gate threshold voltage, VGS = V
= 44 µA
I
D
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
=100V, VGS=0V, Tj=125°C
V
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=15.0A
DS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
2.1 3 4
-
-
0.01
1
1
100
- 1 100 nA
- 65 80
µA
m
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-01-31
Preliminary data SPI21N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPP21N10,SPB21N10
Parameter
Symbol Conditions Values Unit
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
min. typ. max.
V
2*ID*R
DS
=15.0A
I
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
6.5 12.4 - S
- 650 865 pF
- 140 186
- 80 120
VDD=50V, VGS=10V,
=21A, RG=13
I
D
- 10 15 ns
- 56 84
- 37 55
- 23 35
VDD=80V, ID=21A - 3.9 5.2 nC
- 15.5 23.3
Gate charge total Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
g
(plateau)
S
SM
SD
rr
rr
VDD=80V, ID=21A,
=0 to 10V
V
GS
VDD=80V, ID=21A - 6.2 - V
TC=25°C - - 21 A
- 28.9 38.4
- - 84
VGS=0V, IF=21A - 0.94 1.25 V
VR=50V, I
diF/dt=100A/µs
=
lS,
F
- 65 81.5 ns
- 153 192 nC
Page 3
2002-01-31
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