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Preliminary data SPI21N10
SPP21N10,SPB21N10
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
Type Package Ordering Code
SPP21N10 P-TO220-3-1 Q67042-S4116
SPB21N10 P-TO263-3-2 Q67042-S4102
P-TO263-3-2 P-TO220-3-1P-TO262-3-1
Marking
21N10
21N10
Product Summary
V
DS
R
DS(on)
I
D
100 V
80 m
21 A
SPI21N10 P-TO262-3-1 Q67042-S4117
21N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Continuous drain current
TC=25°C
T
=100°C
C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=21 A , VDD=25V, RGS=25
Reverse diode dv/dt
IS=21A, VDS=80V, di/dt=200A/µs, T
jmax
=175°C
Gate source voltage V
Power dissipation
TC=25°C
Symbol Value Unit
I
D
I
D puls
E
AS
dv/dt 6 kV/µs
GS
P
tot
A
21
15.0
84
130 mJ
±20
V
90 W
Operating and storage temperature T
T
,
j
stg
-55... +175
IEC climatic category; DIN IEC 68-1 55/175/56
Page 1
°C
2002-01-31
Thermal Characteristics
Preliminary data SPI21N10
SPP21N10,SPB21N10
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
F)
R
R
R
thJC
thJA
thJA
- - 1.7 K/W
- - 62
-
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V
(BR)DSS
100 - - V
-
-
62
40
Gate threshold voltage, VGS = V
= 44 µA
I
D
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
=100V, VGS=0V, Tj=125°C
V
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=15.0A
DS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
2.1 3 4
-
-
0.01
1
1
100
- 1 100 nA
- 65 80
µA
m
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-01-31
Preliminary data SPI21N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPP21N10,SPB21N10
Parameter
Symbol Conditions Values Unit
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
min. typ. max.
V
2*ID*R
DS
=15.0A
I
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
6.5 12.4 - S
- 650 865 pF
- 140 186
- 80 120
VDD=50V, VGS=10V,
=21A, RG=13
I
D
- 10 15 ns
- 56 84
- 37 55
- 23 35
VDD=80V, ID=21A - 3.9 5.2 nC
- 15.5 23.3
Gate charge total Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
g
(plateau)
S
SM
SD
rr
rr
VDD=80V, ID=21A,
=0 to 10V
V
GS
VDD=80V, ID=21A - 6.2 - V
TC=25°C - - 21 A
- 28.9 38.4
- - 84
VGS=0V, IF=21A - 0.94 1.25 V
VR=50V, I
diF/dt=100A/µs
=
lS,
F
- 65 81.5 ns
- 153 192 nC
Page 3
2002-01-31
Preliminary data SPI21N10
SPP21N10,SPB21N10
1 Power dissipation
P
= f (TC)
tot
SPP21N10
100
W
80
70
tot
P
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160°C190
2 Drain current
I
= f (TC)
D
parameter:
24
A
20
18
16
D
I
14
12
10
T
C
V
10 V
GS
SPP21N10
8
6
4
2
0
0 20 40 60 80 100 120 140 160°C190
T
C
3 Safe operating area
I
= f ( VDS )
D
parameter :
2
10
A
1
10
D
I
0
10
-1
10
10
SPP21N10
-1
D = 0 , T
D
I
/
S
D
V
=
)
n
o
(
S
D
R
0
10
C
= 25 °C
1
10
tp = 6.8µs
DC
10
10 µs
100 µs
1 ms
10 ms
2
4 Transient thermal impedance
Z
= f (tp)
thJC
parameter :
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
3
10
V
V
DS
10
10
SPP21N10
single pulse
-7
10
D = t
-6
10
/T
p
D = 0.50
0.20
0.10
0.05
0.02
0.01
-5
-4
-3
10
10
10
-2
s
t
0
10
p
Page 4
2002-01-31
Preliminary data SPI21N10
SPP21N10,SPB21N10
5 Typ. output characteristic
I
= f (VDS); Tj=25°C
D
parameter:
50
A
D
I
30
20
10
t
= 80 µs
p
e
0
0 5 10
d
c
b
a
V
VGS[V]=
a= 5.6
b= 6.0
c= 7.0
d= 8.0
e= 10.0
V
DS
20
6 Typ. drain-source on resistance
R
DS(on)
parameter:
R
= f (ID)
V
GS
260
m
220
200
180
DS(on)
160
140
120
100
80
60
40
20
0
0 5 10 15 20 25 30 35 40
VGS[V]=
a= 5.6
b= 6.0
b
a
c= 7.0
d= 8.0
e= 10.0
c
d
e
50
A
I
D
7 Typ. transfer characteristics
I
= f ( VGS ); V
D
2 x ID x R
DS
DS(on)max
parameter: tp = 80 µs
30
A
20
D
I
15
10
5
0
2 3 4 5 6
8 Typ. forward transconductance
g
= f(ID); Tj=25°C
fs
parameter:
14
S
12
11
10
fs
g
V
8
V
GS
g
fs
9
8
7
6
5
4
3
2
1
0
0 4 8 12 16
A
24
I
D
Page 5
2002-01-31
Preliminary data SPI21N10
j
SPP21N10,SPB21N10
9 Drain-source on-state resistance
R
DS(on)
parameter :
R
= f (Tj)
I
= 15.0 A, VGS = 10 V
D
SPP21N10
340
m
280
240
DS(on)
200
160
120
80
40
0
-60 -20 20 60 100 140
98%
typ
°C
10 Typ. gate threshold voltage
V
parameter: V
200
T
j
GS(th)
= f (T
4
)
j
GS
= V
DS
V
GS(th)
V
3
2.5
2
1.5
-65 -35 -5 25 55 85 115
ID=0.25mA
ID=44µA
°C
175
T
j
11 Typ. capacitances
C = f (V
parameter:
10
pF
10
C
10
10
)
DS
V
=0V, f=1 MHz
GS
4
3
2
1
0 5 10 15 20 25 30
C
C
C
oss
iss
rss
V
V
DS
40
12 Forward character. of reverse diode
I
= f (VSD)
F
parameter:
10
A
10
F
I
10
10
T
, tp = 80 µs
2
SPP21N10
1
0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
-1
0 0.4 0.8 1.2 1.6 2 2.4
V
V
SD
3
Page 6
2002-01-31
Preliminary data SPI21N10
SPP21N10,SPB21N10
13 Typ. avalanche energy
E
= f (Tj)
AS
par.:
I
= 21 A , VDD = 25 V, RGS = 25
D
140
mJ
120
110
100
AS
90
E
80
70
60
50
40
30
20
10
0
25 45 65 85 105 125 145
°C
14 Typ. gate charge
V
185
T
j
parameter:
f (Q
=
GS
SPP21N10
16
V
12
GS
10
V
8
6
4
2
0
0 5 10 15 20 25 30 35 40
)
Gate
I
= 21 A pulsed
D
V
0,2
DS max
0,8 V
DS max
nC
Q
50
Gate
15 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (Tj)
SPP21N10
120
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 140
°C
200
T
j
Page 7
2002-01-31
Preliminary data SPI21N10
SPP21N10,SPB21N10
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2002-01-31
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