INFINEON SPI20N60CFD User Manual
SPI20N60CFD
S
jma
DS(on)
)
j
j
AR
j
stg
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Intrinsic fast-recovery body diode
• Extreme low reverse recovery charge
Type Package Pb-free
SPI20N60CFD PG-TO262 Yes
DS(on
in TO 220
V
D
Marking
20N60CFD
@ T
R
650 V
x
0.22 Ω
I
D
20.7 A
PG-TO262
Maximum Ratings
Parameter
Continuous drain current
= 25 °C
T
C
= 100 °C
T
C
Pulsed drain current, tp limited by T
max
Avalanche energy, single pulse
= 10 A, VDD = 50 V
I
D
Avalanche energy, repetitive tAR limited by T
jmax
1)
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by T
max
Reverse diode dv/dt
IS=20.7A, VDS=480V, Tj=125°C
Gate source voltage V
Gate source voltage AC (f >1Hz) V
Power dissipation, T
= 25°C P
C
Operating and storage temperature T
Symbol Value Unit
I
D
A
20.7
13.1
I
D puls
E
AS
E
AR
I
52
690 mJ
1
20 A
dv/dt 40 V/ns
GS
GS
tot
, T
±20
±30
208 W
-55... +150
V
°C
2007-02-01Rev. 2.5 Page 1
Maximum Ratings
(BR)
)
S
SPI20N60CFD
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
Maximum diode commutation speed
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
Symbol Value Unit
dv/dt 80 V/ns
diF/dt 900
Thermal Characteristics
Parameter
Thermal resistance, junction - case R
Thermal resistance, junction - ambient, leaded R
Soldering temperature, wavesoldering
Symbol Values Unit
thJC
thJA
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
A/µs
min. typ. max.
- - 0.6 K/W
- - 62
- - 260 °C
min. typ. max.
Drain-source breakdown voltage V
Drain-Source avalanche
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance R
(BR)DS
GS(th
DSS
GSS
DS(on)
G
VGS=0V, ID=0.25mA 600 - - V
DSS
VGS=0V, ID=20A - 700 -
ID=1000µΑ, VGS=V
VDS=600V, VGS=0V,
=25°C,
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=13.1A,
=25°C
T
j
=150°C
T
j
f=1MHz, open Drain - 0.54 -
3 4 5
D
-
-
-
-
2.1
1700
0.19
0.51
µA
-
-
Ω
0.22
-
2007-02-01Rev. 2.5 Page 2
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
)
r
)
f
g
gd
(p
)
SPI20N60CFD
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
2)
C
energy related
Effective output capacitance,
3)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
rss
o(er)
o(tr)
d(on
d(off
VDS≥2*ID*R
=13.1A
I
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
=0V to 480V
V
DS
VDD=380V, VGS=0/10V,
=20.7A, RG=3.6Ω
I
D
DS(on)max
,
min. typ. max.
- 17.5 - S
- 2400 - pF
- 780 -
- 50 -
- 83 - pF
- 160 -
- 12 - ns
- 15 -
- 59 -
- 6.4 -
Gate Charge Characteristics
Gate to source charge
Q
s
VDD=480V, ID=20.7A - 15 - nC
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
is a fixed capacitance that gives the same stored energy as C
C
o(er)
3
is a fixed capacitance that gives the same charging time as C
C
o(tr)
g
lateau
VDD=480V, ID=20.7A,
=0 to 10V
V
GS
VDD=480V, ID=20.7A - 7 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 54 -
- 95 124
AV=EAR
*f.
DSS
DSS
.
.
2007-02-01Rev. 2. Page 3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
D
r
r
SPI20N60CFD
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
S
r
r
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
min. typ. max.
TC=25°C - - 20.7 A
- - 52
VGS=0V, IF=I
VR=480V, IF=IS ,
/dt=100A/µs
di
F
S
- 1 1.2 V
- 150 - ns
- 1 - µC
- 13 - A
- 1400 - A/µs
Thermal resistance
R
th1
R
th2
R
h
R
th4
R
th5
R
th6
P
tot
typ. typ.
Thermal capacitance
0.007686 K/W
0.015
0.029
0.114
0.136
0.059
T
R
j T
th1
(t)
C
th1
C
th2
C
th1
C
th2
C
h
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
External Heatsink
0.0003764
0.001412
0.001932
0.005299
0.012
0.091
Ws/K
2007-02-01Rev. 2.5 Page 4
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