INFINEON SPP07N60C3, SPI07N60C3, SPA07N60C3 User Manual
SPP07N60C3
p
j
AR
j
AR
j
g
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
P-TO220-3-31
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package
SPP07N60C3
SPI07N60C3
P
G-TO220
P
G-TO262-3
SPA07N60C3 PG-TO220-3-31
Ordering Code
Q67040-S4400
-3
Q67040-S4424
SP000216303
3
2
1
Marking
07N60C3
07N60C3
07N60C3
VDS @ T
R
DS(on)
I
D
jmax
650 V
0.6 Ω
7.3 A
PG-TO220PG-TO220-3-31 PG-TO262-3
2
-
-
-
3
2
1
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current,
t
limited by
Avalanche energy, single pulse
I
=5.5A,
D
Avalanche energy, repetitive
I
=7.3A,
D
Avalanche current, repetitive
V
=50V
DD
t
AR
V
=50V
DD
t
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
T
max
limited by T
limited by
T
jmax
max
2)
Symbol
I
D
I
Dpuls
E
AS
E
AR
I
V
GS
V
GS
P
tot
SPP_I
7.3
4.6
21.9
230
0.5
7.3
±20
±30
83
Value
SPA
1)
7.3
1)
4.6
21.9
230
0.5
7.3
±20
±
30
32
Unit
A
A
mJ
A
V
W
Operating and storage temperature
Reverse diode dv/dt dv/dt 15 V/ns
6)
Page 1
,
T
T
st
-55...+150 °C
2005-09-14Rev. 2.7
Maximum Ratings
SPP07N60C3
SPI07N60C3, SPA07N60C3
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Symbol Values Unit
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
2
@ 6 cm
cooling area
Soldering temperature, wavesoldering
3)
T
1.6 mm (0.063 in.) from case for 10s
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
min. typ. max.
- - 1.5 K/W
- - 3.9
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA
VGS=0V, ID=7.3A - 700 -
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th)
DSS
GSS
DS(on)
G
ID=350µA, VGS=V
VDS=600V, VGS=0V,
T
=25°C
j
T
=150°C
j
VGS=30V, VDS=0V - - 100 nA
VGS=10V, ID=4.6A
=25°C
T
j
T
=150°C
j
f=1MHz, open drain - 0.8 -
DS
min. typ. max.
600
- - V
2.1 3 3.9
-
-
-
-
0.5
-
0.54
1.46
1
100
0.6
-
µA
Ω
Page 2
2005-09-14Rev. 2.7
SPI07N60C3, SPA07N60C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPP07N60C3
Parameter
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Symbol Conditions Values Unit
min. typ. max.
V
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
≥2*I
DS
D*RDS(on)max
=4.6A
I
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
=0V to 480V
V
DS
VDD=380V, VGS=0/13V,
=7.3A, RG=12Ω,
I
D
=125°C
T
j
,
- 6 - S
- 790 - pF
- 260 -
- 16 -
- 30 -
- 55 -
- 6 - ns
- 3.5 -
- 60 100
- 7 15
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
6
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
gs
gd
g
(plateau)
=400V, V
peak<VBR, DSS
VDD=480V, ID=7.3A - 3 - nC
- 9.2 -
VDD=480V, ID=7.3A,
=0 to 10V
V
GS
VDD=480V, ID=7.3A - 5.5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
, Tj<T
j,max
.
- 21 27
=EAR*f.
AV
DSS
DSS
.
.
Page 3
2005-09-14Rev. 2.7
Electrical Characteristics
SPP07N60C3
SPI07N60C3, SPA07N60C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
SPP_I SPA SPP_I SPA
min. typ. max.
TC=25°C - - 7.3 A
- - 21.9
VGS=0V, IF=I
VR=480V, IF=IS ,
di
/dt=100A/µs
F
S
- 1 1.2 V
- 400 600 ns
- 4 - µC
- 28 - A
Tj=25°C - 800 - A/µs
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.024 0.024 K/W C
0.046 0.046 C
0.085 0.085 C
0.308 0.195 C
0.317 0.45 C
0.112 2.511 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.00012 0.00012 Ws/K
0.0004578 0.0004578
0.000645 0.000645
0.001867 0.001867
0.004795 0.007558
0.045 0.412
External Heatsink
T
case
amb
Page 4
2005-09-14Rev. 2.7
SPP07N60C3
SPI07N60C3, SPA07N60C3
1 Power dissipation
= f (TC)
P
tot
SPP07N60C3
100
W
80
70
tot
P
60
50
40
30
20
10
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
= f (TC)
P
tot
34
W
28
24
tot
P
20
16
12
8
4
160
T
C
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
= f ( VDS )
I
D
parameter : D = 0 ,
2
10
A
1
10
D
I
0
10
-1
10
-2
10
0
10
T
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
1
10
=25°C
10
4 Safe operating area FullPAK
= f (VDS)
I
D
parameter: D = 0,
2
10
A
1
10
D
I
0
10
-1
10
-2
2
V
3
10
V
DS
10
10
0
T
= 25°C
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
1
10
10
2
V
3
10
V
DS
Page 5
2005-09-14Rev. 2.7
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