INFINEON SGP30N60HS, SGW30N60HS User Manual

SGP30N60HS
SGW30N60HS
High Speed IGBT in NPT-technology
compared to previous generation
off
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
increase with temperature
off
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
I
CE
E
C
off)
Marking Package
T
j
G
PG-TO-247-3-21 PG-TO-220-3-1
C
E
SGP30N60HS 600V 30 480µJ
SGW30N60HS 600V 30 480µJ
150°C 150°C
G30N60HS PG-TO-220-3-1
G30N60HS PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current
= 25°C
T
C
T
= 100°C
C
Pulsed collector current, tp limited by T
I
jmax
Turn off safe operating area
V
600V, Tj 150°C
CE
Avalanche energy single pulse
= 20A, VCC=50V, RGE=25
I
C
start T
=25°C
J
Gate-emitter voltage static transient (t
Short circuit withstand time2)
VGE = 15V, V
600V, Tj 150°C
CC
<1µs, D<0.05)
p
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h T
V
CE
I
C
Cpuls
-
E
AS
V
GE
t
SC
P
tot
T
j
T
stg
j(tl)
,
600 V
41
A
30
112
112
165 mJ
±20 ±30
10
V
µs
250 W
-55...+150
°C
175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
R
IGBT thermal resistance,
thJC
junction – case
Thermal resistance, junction – ambient
R
thJA
PG-TO-220-3-1
PG-TO-247-3-21
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
VCE=20V, IC=30A
g
fs
VGE=0V, IC=500µA
VGE = 15V, IC=30A
=25°C
T
j
T
=150°C
j
=700µA,VCE=V
I
C
VCE=600V,VGE=0V
T
=25°C
j
=150°C
T
j
VCE=0V,VGE=20V
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
=25V,
CE
=0V,
V
GE
f=1MHz
VCC=480V, IC=30A
=15V
V
GE
PG-TO-220-3-1
PG-TO-247-3-21
=15V,tSC≤10µs
V
GE
V
CC
150°C
T
j
0.5 K/W
62
40
Value
Unit
min. Typ. max.
600 - -
GE
3 4 5
-
-
2.8
3.5
-
-
3.15
4.00
40
3000
V
µA
- - 100 nA
- 20 - S
- 1500
pF
- 150
- 92
- 141 nC
- 7
nH
13
- 220 A
600V,
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
V
=400V,IC=30A,
CC
V
=0/15V,
GE
R
=11
G
1)
L
=60nH,
σ
1)
=40pF
C
σ
Energy losses include “tail” and diode reverse recovery.
- 20
- 21
- 250
- 25
- 0.60
- 0.55
- 1.15
Switching Characteristic, Inductive Load, at T
=150 °C
j
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=150°C
j
=400V,IC=30A,
V
CC
V
=0/15V,
GE
R
= 1.8
G
1)
=60nH,
L
σ
1)
C
=40pF
σ
Energy losses include “tail” and diode reverse recovery.
=150°C
T
j
V
=400V,IC=30A,
CC
=0/15V,
V
GE
R
= 11
G
1)
=60nH,
L
σ
1)
C
=40pF
σ
Energy losses include “tail” and diode reverse recovery.
- 16
- 13
- 122
- 29
- 0.78
- 0.48
- 1.26
- 20
- 19
- 274
- 27
- 0.91
- 0.70
- 1.61
Value
Value
Unit
ns
mJ
Unit
ns
mJ
ns
mJ
1)
Leakage inductance L
an d Stray capacity Cσ due to test circuit in Figure E.
σ
Power Semiconductors
3 Rev. 2.2 Sep 07
2
SGP30N60HS
SGW30N60HS
100A
TC=80°C
80A
60A
40A
, COLLECTOR CURRENT
C
I
20A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
TC=110°C
I
c
I
c
Figure 1. Collector current as a function of
switching frequency
(T
150°C, D = 0.5, VCE = 400V,
j
= 0/+15V, RG = 11Ω)
V
GE
100A
10A
1A
, COLLECTOR CURRENT
C
I
0.1A 1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T V
GE
= 25°C, Tj 150°C;
C
=15V)
tP=4µs
15µs
50µs
200µs
1ms
DC
40A
00W
30A
150W
100W
, POWER DISSIPATION
tot
P
50W
0W
25°C 50°C 75°C 100°C 125°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
20A
, COLLECTOR CURRENT
C
I
10A
0A
25°C 75°C 125°C
Figure 4. Collector current as a function of
case temperature
150°C)
(T
j
Limited by Bond wire
TC, CASE TEMPERATURE
case temperature
15V, Tj 150°C)
(V
GE
Power Semiconductors
4 Rev. 2.2 Sep 07
4
20A40A6
8
SGP30N60HS
SGW30N60HS
80A
70A
60A
50A
30A
, COLLECTOR CURRENT
C
I
20A
10A
VGE=20V
15V 13V 11V
9V
7V
5V
0A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
= 25°C)
j
80A
70A
60A
50A
40A
30A
, COLLECTOR CURRENT
C
I
20A
10A
0A
VGE=20V
15V
13V
11V
9V 7V
5V
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
= 150°C)
j
5,5V
0A
0A
, COLLECTOR CURRENT
C
I
0A
0V 2V 4V 6V 8V
, GATE-EMITTER VOLTAGE
V
GE
Figure 7. Typical transfer characteristic
(V
=10V)
CE
TJ=-55°C
25°C
150°C
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
COLLECTOR-EMITT SATURATION VOLTAGE
1,5V
CE(sat),
1,0V
V
Figure 8. Typical collector-emitter
IC=60A
IC=30A
IC=15A
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
saturation voltage as a function of junction temperature
(V
= 15V)
GE
Power Semiconductors
5 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
t
d(off)
100ns
100 ns
t
f
t, SWITCHING TIMES
t
d(on)
t
10ns
0A 10A 20A 30A 40A 50A
r
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
t, SWITCHING TIMES
10 ns
Figure 10. Typical switching times as a
function of collector current
(inductive load, T V
=400V, VGE=0/15V, RG=11,
CE
=150°C,
J
Dynamic test circuit in Figure E)
5,5V
t
d(off)
t
f
t
d(on)
t
r
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω
RG, GATE RESISTOR
function of gate resistor
(inductive load, T V
=400V, VGE=0/15V, IC=30A,
CE
=150°C,
J
Dynamic test circuit in Figure E)
t
d(off)
100ns
t, SWITCHING TIMES
t
f
t
r
t
d(on)
10ns
0°C 50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V V
=0/15V, IC=30A, RG=11,
GE
=400V,
CE
Dynamic test circuit in Figure E)
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
GATE-EMITT TRSHOLD VOLTAGE
2,0V
GE(th),
V
1,5V
1,0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
= 0.7mA)
(I
C
max.
typ.
min.
Power Semiconductors
6 Rev. 2.2 Sep 07
0
2
3
4
5
τ
τ
SGP30N60HS
SGW30N60HS
1,0mJ
E, SWITCHING ENERGY LOSSES
,0mJ
,0mJ
,0mJ
,0mJ
,0mJ
*) Eon and Ets include losses due to diode recovery
0A 10A 20A 30A 40A 50A 60A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T V
=400V, VGE=0/15V, RG=11,
CE
=150°C,
J
Dynamic test circuit in Figure E)
Eon*
E
*) Eon and Ets include losses due to diode recovery
3,0 mJ
2,5 mJ
2,0 mJ
1,5 mJ
1,0 mJ
off
E, SWITCHING ENERGY LOSSES
Ets*
Eon*
0,5 mJ
E
off
0,0 mJ
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω 30Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T V
=400V, VGE=0/15V, IC=30A,
CE
=150°C,
J
Dynamic test circuit in Figure E)
*) Eon and Ets include losses due to diode recovery
1,5mJ
1,0mJ
,5mJ
E, SWITCHING ENERGY LOSSES
,0mJ
0°C 50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
Figure 15. Typical switching energy losses
Ets*
Eon*
E
10
10
off
10
, TRANSIENT THERMAL RESISTANCE
thJC
Z
10
Figure 16. IGBT transient thermal resistance as a function of junction temperature
(inductive load, V V
=0/15V, IC=30A, RG=11,
GE
=400V,
CE
Dynamic test circuit in Figure E)
D=0.5
0.2
-1
K/W
0.1
0.05
0.02
-2
K/W
0.01
-3
K/W
single pulse
-4
K/W
1µs 10µs 100µs 1ms 10ms 100ms
R ,(K/W)
0.3681 0.0555
0.0938 1.26E-03
0.038 1.49E-04
R
1
C1=
1/R1
tP, PULSE WIDTH
/ T)
(D = t
p
C2=
τ
, (s)
2/R2
R
2
Power Semiconductors
7 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
C
1nF
15V
iss
480V120V
10V
100pF
c, CAPACITANCE
, GATE-EMITTER VOLTAGE
5V
GE
V
0V
0nC 50nC 100nC 150nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(I
=30 A)
C
10pF
Figure 18. Typical capacitance as a function
300A
0V 10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
of collector-emitter voltage
(V
=0V, f = 1 MHz)
GE
C
oss
C
rss
15µs
10µs
5µs
, SHORT CIRCUIT WITHSTAND TIME
SC
t
0µs
10V 11V 12V 13V 14V
, GATE-EMITETR VOLTAGE
V
GE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
=600V, start at TJ=25°C)
CE
250A
200A
150A
100A
, short circuit COLLECTOR CURRENT
50A
C(sc)
I
0A
10V 12V 14V 16V 18V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate­emitter voltage
600V, Tj 150°C)
(V
CE
Power Semiconductors
8 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
PG-TO220-3-1
Power Semiconductors
9 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
PG-TO247-3-21
Power Semiconductors
10 Rev. 2.2 Sep 07
τ
τ
τ
SGP30N60HS
SGW30N60HS
1
rrrr
1
T(t)
j
2 2
n
n
Figure A. Definition of switching times
p(t)
12 n
rr
T
C
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L
=60nH
σ
an d Stray capacity Cσ =40pF.
Power Semiconductors
11 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
Edition 2006-01
Published by Infineon Technologies AG 81726 München, Germany
© Infineon Technologies AG 9/12/07. All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
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Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
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Power Semiconductors
12 Rev. 2.2 Sep 07
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