INFINEON SGP30N60HS, SGW30N60HS User Manual
SGP30N60HS
SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower E
compared to previous generation
off
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
increase with temperature
off
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1
for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
I
CE
E
C
off)
Marking Package
T
j
G
PG-TO-247-3-21 PG-TO-220-3-1
C
E
SGP30N60HS 600V 30 480µJ
SGW30N60HS 600V 30 480µJ
150°C
150°C
G30N60HS PG-TO-220-3-1
G30N60HS PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current
= 25°C
T
C
T
= 100°C
C
Pulsed collector current, tp limited by T
I
jmax
Turn off safe operating area
V
≤ 600V, Tj ≤ 150°C
CE
Avalanche energy single pulse
= 20A, VCC=50V, RGE=25Ω
I
C
start T
=25°C
J
Gate-emitter voltage static
transient (t
Short circuit withstand time2)
VGE = 15V, V
≤ 600V, Tj ≤ 150°C
CC
<1µs, D<0.05)
p
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h T
V
CE
I
C
Cpuls
-
E
AS
V
GE
t
SC
P
tot
T
j
T
stg
j(tl)
,
600 V
41
A
30
112
112
165 mJ
±20
±30
10
V
µs
250 W
-55...+150
°C
175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
R
IGBT thermal resistance,
thJC
junction – case
Thermal resistance,
junction – ambient
R
thJA
PG-TO-220-3-1
PG-TO-247-3-21
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
VCE=20V, IC=30A
g
fs
VGE=0V, IC=500µA
VGE = 15V, IC=30A
=25°C
T
j
T
=150°C
j
=700µA,VCE=V
I
C
VCE=600V,VGE=0V
T
=25°C
j
=150°C
T
j
VCE=0V,VGE=20V
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
=25V,
CE
=0V,
V
GE
f=1MHz
VCC=480V, IC=30A
=15V
V
GE
PG-TO-220-3-1
PG-TO-247-3-21
=15V,tSC≤10µs
V
GE
V
CC
≤ 150°C
T
j
0.5 K/W
62
40
Value
Unit
min. Typ. max.
600 - -
GE
3 4 5
-
-
2.8
3.5
-
-
3.15
4.00
40
3000
V
µA
- - 100 nA
- 20 - S
- 1500
pF
- 150
- 92
- 141 nC
- 7
nH
13
- 220 A
≤ 600V,
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
V
=400V,IC=30A,
CC
V
=0/15V,
GE
R
=11Ω
G
1)
L
=60nH,
σ
1)
=40pF
C
σ
Energy losses include
“tail” and diode
reverse recovery.
- 20
- 21
- 250
- 25
- 0.60
- 0.55
- 1.15
Switching Characteristic, Inductive Load, at T
=150 °C
j
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=150°C
j
=400V,IC=30A,
V
CC
V
=0/15V,
GE
R
= 1.8Ω
G
1)
=60nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
=150°C
T
j
V
=400V,IC=30A,
CC
=0/15V,
V
GE
R
= 11Ω
G
1)
=60nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 16
- 13
- 122
- 29
- 0.78
- 0.48
- 1.26
- 20
- 19
- 274
- 27
- 0.91
- 0.70
- 1.61
Value
Value
Unit
ns
mJ
Unit
ns
mJ
ns
mJ
1)
Leakage inductance L
an d Stray capacity Cσ due to test circuit in Figure E.
σ
Power Semiconductors
3 Rev. 2.2 Sep 07
2
SGP30N60HS
SGW30N60HS
100A
TC=80°C
80A
60A
40A
, COLLECTOR CURRENT
C
I
20A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
TC=110°C
I
c
I
c
Figure 1. Collector current as a function of
switching frequency
(T
≤ 150°C, D = 0.5, VCE = 400V,
j
= 0/+15V, RG = 11Ω)
V
GE
100A
10A
1A
, COLLECTOR CURRENT
C
I
0.1A
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
V
GE
= 25°C, Tj ≤ 150°C;
C
=15V)
tP=4µs
15µs
50µs
200µs
1ms
DC
40A
00W
30A
150W
100W
, POWER DISSIPATION
tot
P
50W
0W
25°C 50°C 75°C 100°C 125°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
20A
, COLLECTOR CURRENT
C
I
10A
0A
25°C 75°C 125°C
Figure 4. Collector current as a function of
case temperature
≤ 150°C)
(T
j
Limited by Bond wire
TC, CASE TEMPERATURE
case temperature
≤ 15V, Tj ≤ 150°C)
(V
GE
Power Semiconductors
4 Rev. 2.2 Sep 07
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