SGP30N60HS
SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower E
compared to previous generation
off
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
increase with temperature
off
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1
for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V
I
CE
E
C
off)
Marking Package
T
j
G
PG-TO-247-3-21 PG-TO-220-3-1
C
E
SGP30N60HS 600V 30 480µJ
SGW30N60HS 600V 30 480µJ
150°C
150°C
G30N60HS PG-TO-220-3-1
G30N60HS PG-TO-247-3-21
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
DC collector current
= 25°C
T
C
T
= 100°C
C
Pulsed collector current, tp limited by T
I
jmax
Turn off safe operating area
V
≤ 600V, Tj ≤ 150°C
CE
Avalanche energy single pulse
= 20A, VCC=50V, RGE=25Ω
I
C
start T
=25°C
J
Gate-emitter voltage static
transient (t
Short circuit withstand time2)
VGE = 15V, V
≤ 600V, Tj ≤ 150°C
CC
<1µs, D<0.05)
p
Power dissipation
= 25°C
T
C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h T
V
CE
I
C
Cpuls
-
E
AS
V
GE
t
SC
P
tot
T
j
T
stg
j(tl)
,
600 V
41
A
30
112
112
165 mJ
±20
±30
10
V
µs
250 W
-55...+150
°C
175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
R
IGBT thermal resistance,
thJC
junction – case
Thermal resistance,
junction – ambient
R
thJA
PG-TO-220-3-1
PG-TO-247-3-21
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
VCE=20V, IC=30A
g
fs
VGE=0V, IC=500µA
VGE = 15V, IC=30A
=25°C
T
j
T
=150°C
j
=700µA,VCE=V
I
C
VCE=600V,VGE=0V
T
=25°C
j
=150°C
T
j
VCE=0V,VGE=20V
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
=25V,
CE
=0V,
V
GE
f=1MHz
VCC=480V, IC=30A
=15V
V
GE
PG-TO-220-3-1
PG-TO-247-3-21
=15V,tSC≤10µs
V
GE
V
CC
≤ 150°C
T
j
0.5 K/W
62
40
Value
Unit
min. Typ. max.
600 - -
GE
3 4 5
-
-
2.8
3.5
-
-
3.15
4.00
40
3000
V
µA
- - 100 nA
- 20 - S
- 1500
pF
- 150
- 92
- 141 nC
- 7
nH
13
- 220 A
≤ 600V,
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=25°C,
j
V
=400V,IC=30A,
CC
V
=0/15V,
GE
R
=11Ω
G
1)
L
=60nH,
σ
1)
=40pF
C
σ
Energy losses include
“tail” and diode
reverse recovery.
- 20
- 21
- 250
- 25
- 0.60
- 0.55
- 1.15
Switching Characteristic, Inductive Load, at T
=150 °C
j
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
t
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
=150°C
j
=400V,IC=30A,
V
CC
V
=0/15V,
GE
R
= 1.8Ω
G
1)
=60nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
=150°C
T
j
V
=400V,IC=30A,
CC
=0/15V,
V
GE
R
= 11Ω
G
1)
=60nH,
L
σ
1)
C
=40pF
σ
Energy losses include
“tail” and diode
reverse recovery.
- 16
- 13
- 122
- 29
- 0.78
- 0.48
- 1.26
- 20
- 19
- 274
- 27
- 0.91
- 0.70
- 1.61
Value
Value
Unit
ns
mJ
Unit
ns
mJ
ns
mJ
1)
Leakage inductance L
an d Stray capacity Cσ due to test circuit in Figure E.
σ
Power Semiconductors
3 Rev. 2.2 Sep 07
2
SGP30N60HS
SGW30N60HS
100A
TC=80°C
80A
60A
40A
, COLLECTOR CURRENT
C
I
20A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
TC=110°C
I
c
I
c
Figure 1. Collector current as a function of
switching frequency
(T
≤ 150°C, D = 0.5, VCE = 400V,
j
= 0/+15V, RG = 11Ω)
V
GE
100A
10A
1A
, COLLECTOR CURRENT
C
I
0.1A
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
V
GE
= 25°C, Tj ≤ 150°C;
C
=15V)
tP=4µs
15µs
50µs
200µs
1ms
DC
40A
00W
30A
150W
100W
, POWER DISSIPATION
tot
P
50W
0W
25°C 50°C 75°C 100°C 125°C
, CASE TEMPERATURE
T
C
Figure 3. Power dissipation as a function of
20A
, COLLECTOR CURRENT
C
I
10A
0A
25°C 75°C 125°C
Figure 4. Collector current as a function of
case temperature
≤ 150°C)
(T
j
Limited by Bond wire
TC, CASE TEMPERATURE
case temperature
≤ 15V, Tj ≤ 150°C)
(V
GE
Power Semiconductors
4 Rev. 2.2 Sep 07
4
20A40A6
8
SGP30N60HS
SGW30N60HS
80A
70A
60A
50A
30A
, COLLECTOR CURRENT
C
I
20A
10A
VGE=20V
15V
13V
11V
9V
7V
5V
0A
0A
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
= 25°C)
j
80A
70A
60A
50A
40A
30A
, COLLECTOR CURRENT
C
I
20A
10A
0A
VGE=20V
15V
13V
11V
9V
7V
5V
0V 2V 4V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
= 150°C)
j
5,5V
0A
0A
, COLLECTOR CURRENT
C
I
0A
0V 2V 4V 6V 8V
, GATE-EMITTER VOLTAGE
V
GE
Figure 7. Typical transfer characteristic
(V
=10V)
CE
TJ=-55°C
25°C
150°C
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
COLLECTOR-EMITT SATURATION VOLTAGE
1,5V
CE(sat),
1,0V
V
Figure 8. Typical collector-emitter
IC=60A
IC=30A
IC=15A
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
saturation voltage as a function of
junction temperature
(V
= 15V)
GE
Power Semiconductors
5 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
t
d(off)
100ns
100 ns
t
f
t, SWITCHING TIMES
t
d(on)
t
10ns
0A 10A 20A 30A 40A 50A
r
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
t, SWITCHING TIMES
10 ns
Figure 10. Typical switching times as a
function of collector current
(inductive load, T
V
=400V, VGE=0/15V, RG=11Ω,
CE
=150°C,
J
Dynamic test circuit in Figure E)
5,5V
t
d(off)
t
f
t
d(on)
t
r
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω
RG, GATE RESISTOR
function of gate resistor
(inductive load, T
V
=400V, VGE=0/15V, IC=30A,
CE
=150°C,
J
Dynamic test circuit in Figure E)
t
d(off)
100ns
t, SWITCHING TIMES
t
f
t
r
t
d(on)
10ns
0°C 50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
=0/15V, IC=30A, RG=11Ω,
GE
=400V,
CE
Dynamic test circuit in Figure E)
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
GATE-EMITT TRSHOLD VOLTAGE
2,0V
GE(th),
V
1,5V
1,0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
= 0.7mA)
(I
C
max.
typ.
min.
Power Semiconductors
6 Rev. 2.2 Sep 07
0
2
3
4
5
τ
τ
SGP30N60HS
SGW30N60HS
1,0mJ
E, SWITCHING ENERGY LOSSES
,0mJ
,0mJ
,0mJ
,0mJ
,0mJ
*) Eon and Ets include losses
due to diode recovery
0A 10A 20A 30A 40A 50A 60A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
=400V, VGE=0/15V, RG=11Ω,
CE
=150°C,
J
Dynamic test circuit in Figure E)
Eon*
E
*) Eon and Ets include losses
due to diode recovery
3,0 mJ
2,5 mJ
2,0 mJ
1,5 mJ
1,0 mJ
off
E, SWITCHING ENERGY LOSSES
Ets*
Eon*
0,5 mJ
E
off
0,0 mJ
0Ω 5Ω 10Ω 15Ω 20Ω 25Ω 30Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
=400V, VGE=0/15V, IC=30A,
CE
=150°C,
J
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
1,5mJ
1,0mJ
,5mJ
E, SWITCHING ENERGY LOSSES
,0mJ
0°C 50°C 100°C 150°C
, JUNCTION TEMPERATURE
T
J
Figure 15. Typical switching energy losses
Ets*
Eon*
E
10
10
off
10
, TRANSIENT THERMAL RESISTANCE
thJC
Z
10
Figure 16. IGBT transient thermal resistance
as a function of junction
temperature
(inductive load, V
V
=0/15V, IC=30A, RG=11Ω,
GE
=400V,
CE
Dynamic test circuit in Figure E)
D=0.5
0.2
-1
K/W
0.1
0.05
0.02
-2
K/W
0.01
-3
K/W
single pulse
-4
K/W
1µs 10µs 100µs 1ms 10ms 100ms
R ,(K/W)
0.3681 0.0555
0.0938 1.26E-03
0.038 1.49E-04
R
1
C1=
1/R1
tP, PULSE WIDTH
/ T)
(D = t
p
C2=
τ
, (s)
2/R2
R
2
Power Semiconductors
7 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
C
1nF
15V
iss
480V120V
10V
100pF
c, CAPACITANCE
, GATE-EMITTER VOLTAGE
5V
GE
V
0V
0nC 50nC 100nC 150nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(I
=30 A)
C
10pF
Figure 18. Typical capacitance as a function
300A
0V 10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
of collector-emitter voltage
(V
=0V, f = 1 MHz)
GE
C
oss
C
rss
15µs
10µs
5µs
, SHORT CIRCUIT WITHSTAND TIME
SC
t
0µs
10V 11V 12V 13V 14V
, GATE-EMITETR VOLTAGE
V
GE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
=600V, start at TJ=25°C)
CE
250A
200A
150A
100A
, short circuit COLLECTOR CURRENT
50A
C(sc)
I
0A
10V 12V 14V 16V 18V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gateemitter voltage
≤ 600V, Tj ≤ 150°C)
(V
CE
Power Semiconductors
8 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
PG-TO220-3-1
Power Semiconductors
9 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
PG-TO247-3-21
Power Semiconductors
10 Rev. 2.2 Sep 07
τ
τ
τ
SGP30N60HS
SGW30N60HS
1
rrrr
1
T(t)
j
2
2
n
n
Figure A. Definition of switching times
p(t)
12 n
rr
T
C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L
=60nH
σ
an d Stray capacity Cσ =40pF.
Power Semiconductors
11 Rev. 2.2 Sep 07
SGP30N60HS
SGW30N60HS
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/12/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
12 Rev. 2.2 Sep 07
Loading...