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SGM2016AM/AP
For the availability of this product, please contact the sales office.
GaAs N-channel Dual-Gate MES FET
Description
The SGM2016AM/AP is an N-channel dual-gate
GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
Features
• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode
Application
UHF-band high-frequency amplifier, mixer, and oscillator
SGM2016AM
SGM2016AP
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 12 V
• Gate 1 to source voltage VG1S –5 V
• Gate 2 to source voltage VG2S –5 V
• Drain current ID 55 mA
• Allowable power dissipation PD 150 mW
• Channel temperature Tch 150 °C
• Storage temperature Tstg –55 to +150 °C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E96Y10-PS
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SGM2016AM/AP
Electrical Characteristics (Ta = 25°C)
Item
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
Symbol Conditions Min. Typ. Max. Unit
VDS = 12V
IDSX
VG1S = –4V
50
VG2S = 0V
VG1S = –4.5V
IG1SS
VG2S = 0V
–8
VDS = 0V
VG2S = –4.5V
IG2SS
VG1S = 0V
–8
VDS = 0V
VDS = 5V
IDSS
VG1S = 0V
10
35
VG2S = 0V
VDS = 5V
VG1S (OFF)
ID = 100µA
–2.5
VG2S = 0V
VDS = 5V
VG2S (OFF)
ID = 100µA
–2.5
VG1S = 0V
VDS = 5V
gm
ID = 10mA
VG2S = 1.5V
20
30
f = 1kHz
Ciss
Crss
NF
Ga
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz
VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 900MHz
17
0.9
25
1.2
21
2.0
40
2.0
µA
µA
µA
mA
V
V
ms
pF
fF
dB
dB
Typical Characteristics (Ta = 25°C)
ID vs. VDS
40
(VG2S = 1.5V)
30
20
– Drain current [mA]
D
I
10
0
0246
135 –2.0 –1.5 –1.0 –0.5 0
V
DS – Drain to source voltage [V]
VG1S
= 0V
–0.3V
–0.6V
–0.9V
– 2 –
25
(VDS = 5V)
20
15
10
– Drain current [mA]
D
I
5
0
V
G1S – Gate 1 to source voltage [V]
ID vs. VG1S
VG2S = 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
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SGM2016AM/AP
ID vs. VG2S
25
(VDS = 5V)
20
15
10
– Drain current [mA]
D
I
5
0
–2.0 –1.5 –1.0 –0.5 0
V
G2S – Gate 2 to source voltage [V]
NF vs. VG1S
5
(VDS = 5V, f = 900MHz)
4
3
2
NF – Noise figure [dB]
1
VG2S = 0.5V
1.0V
1.5V
G1S
V
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
gm vs. VG1S
50
(VDS = 5V)
40
30
20
10
gm – Forward transfer admittance [ms]
0
–2.0 –1.5 –1.0 –0.5 0
V
G1S – Gate 1 to source voltage [V]
Ga vs. VG1S
30
(VDS = 5V, f = 900MHz)
25
VG2S = 1.5V
20
15
10
Ga – Associated gain [dB]
5
VG2S
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
1.0V
0.5V
0
–1.0 –0.6 –0.2 0 0.2
–1.2 –0.8 –0.4
V
G1S – Gate 1 to source voltage [V]
NF, Ga vs. ID
3.0
(VDS = 5V, VG2S = 1.5V, f = 900MHz)
2.5
2.0
1.5
1.0
NF – Noise figure [dB]
0.5
0
2 6 10 14
I
D – Drain current [mA]
Ga
NF
18
30
25
20
15
10
Ga – Associated gain [dB]
5
0
0
–1.2 –0.8 –0.4
–1.0
G1S – Gate 1 to source voltage [V]
V
–0.6 –0.2 0 0.2
NF, Ga vs. f
3.0
2.5
2.0
1.5
1.0
NF – Noise figure [dB]
0.5
0
0 0.8 1.6 2.2
(VDS = 5V, VG2S = 1.5V, ID = 10mA)
Ga
NFmin
0.4 1.2 2.0
0.6 1.40.2 1.0 1.80 4 8 12162022
f – Frequency [GHz]
35
30
25
20
15
Ga – Associated gain [dB]
10
5
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SGM2016AM/AP
S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) (Z0 = 50Ω)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S11
MAG ANG
0.999
0.994
0.981
0.969
0.952
0.935
0.917
0.896
0.877
0.850
0.822
0.797
0.769
0.744
0.717
0.692
0.668
0.641
0.617
0.589
–3.8
–7.9
–11.8
–16.0
–20.0
–24.1
–27.8
–31.3
–34.7
–38.0
–40.9
–44.0
–46.8
–49.7
–52.4
–54.9
–57.5
–59.6
–61.6
–63.4
S21
MAG ANG
2.521
2.515
2.499
2.480
2.451
2.420
2.391
2.362
2.331
2.294
2.254
2.216
2.182
2.153
2.118
2.076
2.038
2.005
1.963
1.929
174.2
168.1
162.3
156.3
150.6
144.8
139.4
133.9
128.5
122.9
117.7
112.4
107.3
102.1
96.9
91.8
86.6
81.4
76.4
71.5
S12
MAG ANG
0.002
0.003
0.005
0.006
0.007
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.013
0.013
95.0
87.9
83.6
77.7
82.1
76.3
76.8
78.7
74.4
82.6
79.3
72.4
79.0
81.5
80.3
83.7
90.1
98.4
109.0
113.0
S22
MAG ANG
0.969
0.966
0.964
0.961
0.957
0.955
0.955
0.954
0.954
0.953
0.952
0.949
0.947
0.946
0.945
0.945
0.945
0.945
0.945
0.945
–1.3
–3.0
–4.2
–6.1
–7.2
–8.8
–9.9
–11.5
–12.8
–14.4
–15.6
–17.2
–18.2
–20.0
–21.3
–22.9
–24.1
–25.8
–27.3
–28.7
Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA)
f
(MHz)
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
NFmin
(dB)
0.73
0.79
0.85
0.92
0.99
1.05
1.11
1.18
1.25
1.32
1.39
1.46
1.53
1.61
1.68
1.76
1.84
1.92
2.00
Gamma Optimum
ANG
0.94
0.90
0.87
0.84
0.81
0.78
0.75
0.72
0.70
0.67
0.65
0.63
0.60
0.58
0.56
0.54
0.52
0.50
0.48
MAG
7.5
10.8
13.9
16.8
19.5
22.0
24.5
26.8
29.1
31.4
33.8
36.1
38.6
41.2
43.9
46.8
50.0
53.4
57.0
Rn
(Ω)
40.0
39.5
39.0
38.5
37.9
37.4
36.8
36.1
35.5
34.8
34.1
33.4
32.6
31.9
31.0
30.2
29.3
28.5
27.5
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Page 5
Package Outline Unit: mm
SGM2016AM
( 0.95 )
3
4
+ 0.1
0.4 – 0.05
( 0.95 )
2.9 ± 0.2
1.9
1.8
( 0.95 )
2
+ 0.2
1
0.6 – 0.05
( 0.85 )
M-254
0.6
1.6 – 0.1
+ 0.1
2.8 ± 0.2
+ 0.2
1.1 – 0.1
0 to 0.1
0.10 – 0.01
SGM2016AM/AP
+ 0.1
SGM2016AP
SONY CODE
EIAJ CODE
JEDEC CODE
( 0.95 )
0.4 – 0.05
( 0.95 )
+ 0.1
1. Source
2. Gate1
3. Gate2
4. Drain
M-254
PACKAGE MASS
0.01g
M-255
2.9 ± 0.2
1.9
( 0.95 )
+ 0.2
1.1 – 0.1
0.6
34
+ 0.2
2.8 ± 0.2
1.6 – 0.1
1
2
+ 0.1
0.6 – 0.05
( 0.85 )
1.8
0 to 0.1
+ 0.1
0.10 – 0.01
SONY CODE
EIAJ CODE
JEDEC CODE
M-255 PACKAGE MASS
– 5 –
1. Source
2. Drain
3. Gate2
4. Gate1
0.01g
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