Infineon SGP15N120, SGW15N120 Data Sheet
SGP15N120
SGW15N120
Fast IGBT in NPT-technology
• 40% lower E
compared to previous generation
off
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC
1
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V
I
CE
C
E
Tj Marking Package
off
PG-TO-220-3-1
G
PG-TO-247-3
C
E
SGP15N120 1200V 15A 1.5mJ
SGW15N120 1200V 15A 1.5mJ
150°C
150°C
GP15N120 PG-TO-220-3-1
SGW15N120 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current
= 25°C
T
C
= 100°C
T
C
Pulsed collector current, tp limited by T
Turn off safe operating area
≤ 1200V, Tj ≤ 150°C
V
CE
I
jmax
I
C
Cpuls
-
Gate-emitter voltage VGE
Avalanche energy, single pulse
= 15A, V
I
C
= 50V, R
CC
= 25Ω, start at Tj = 25°C
GE
Short circuit withstand time2
= 15V, 100V≤ V
V
GE
≤1200V, Tj ≤ 150°C
CC
Power dissipation
= 25°C
T
C
E
85 mJ
AS
tSC 10
P
198 W
tot
Operating junction and storage temperature Tj , T
30
15
52
52
±20
-55...+150
stg
A
V
μs
°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1 Rev. 2.5 Febr. 08
SGP15N120
SGW15N120
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
= 25 °C, unless otherwise specified
j
Parameter Symbol Conditions
Static Characteristic
Collector-emitter breakdown voltage V
Collector-emitter saturation voltage V
Gate-emitter threshold voltage V
Zero gate voltage collector current I
Gate-emitter leakage current I
Transconductance gfs VCE=20V, IC=15A 11 - S
Dynamic Characteristic
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate charge Q
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2) I
R
0.63
thJC
K/W
R
PG-TO-220-3-1
thJA
PG-TO-247-3
62
40
Value
Unit
min. typ. max.
(BR)CES
CE(sat)
GE(th)
CES
GES
- 1250 1500
iss
oss
rss
Gate
VGE=0V,
I
=1000μA
C
VGE = 15V, IC=15A
=25°C
T
j
=150° C
T
j
=600μA,VCE=V
I
C
VCE=1200V,VGE=0V
=25°C
T
j
=150° C
T
j
VCE=0V,VGE=20V - - 100 nA
=25V,
V
CE
V
- 100 120
=0V,
GE
f=1MHz
VCC=960V, IC=15A
=15V
V
GE
LE PG-TO-220-3-1
PG-TO-247-3
C(SC)
=15V,tSC≤5μs
V
GE
100V≤V
≤ 150°C
T
j
CC
≤1200V,
1200 - -
GE
2.5
-
3 4 5
-
-
3.1
3.7
-
-
- 65 80
- 130 175 nC
-
7
13
- 145 - A
3.6
4.3
200
800
-
V
μA
pF
nH
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2 Rev. 2.5 Febr. 08
SGP15N120
SGW15N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter Symbol Conditions
min. typ. max.
IGBT Characteristic
Turn-on delay time t
Rise time tr - 23 30
Turn-off delay time t
Fall time tf - 22 29
Turn-on energy Eon - 1.1 1.5
Turn-off energy E
Total switching energy Ets
- 18 24
T
d(on)
- 580 750
d(off)
- 0.8 1.1
off
=25°C,
j
V
=800V,IC=15A,
CC
V
=15V/0V,
GE
=33Ω,
R
G
1)
=180nH,
L
σ
1)
=40pF
C
σ
Energy losses include
“tail” and diode
- 1.9 2.6
reverse recovery.
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter Symbol Conditions
IGBT Characteristic
Turn-on delay time t
Rise time tr - 30 36
Turn-off delay time t
Fall time tf - 31 37
Turn-on energy Eon - 1.9 2.3
Turn-off energy E
Total switching energy Ets
- 38 46
T
d(on)
- 652 780
d(off)
- 1.5 2.0
off
=150° C
j
V
=800V,
CC
I
=15A,
C
V
=15V/0V,
GE
=33Ω,
R
G
1)
L
=180nH,
σ
1)
=40pF
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
min. typ. max.
- 3.4 4.3
Value
Value
Unit
ns
mJ
Unit
ns
mJ
Power Semiconductors
3 Rev. 2.5 Febr. 08
A
SGP15N120
SGW15N120
70
60A
I
c
100A
tp=2μs
15μs
50A
10A
40A
30A
20A
, COLLECTOR CURRENT
C
I
10A
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
I
c
TC=80°C
TC=110°C
1A
, COLLECTOR CURRENT
C
I
0.1A
Figure 1. Collector current as a function of
switching frequency
≤ 150°C, D = 0.5, VCE = 800V,
(T
j
= +15V/0V, RG = 33Ω)
V
GE
35A
200W
30A
175W
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T
= 25°C, Tj ≤ 150°C)
C
50μs
200μs
1ms
DC
25A
20A
15A
10A
, COLLECTOR CURRENT
C
I
5A
0A
25°C 50°C 75°C 100°C 125°C
, POWER DISSIPATION
tot
P
150W
125W
100W
75W
50W
25W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
≤ 150°C)
(T
j
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
4 Rev. 2.5 Febr. 08
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