µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial
applications
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
Product Summary
Overvoltage protection V
Operating voltage
V
65V
bb(AZ)
4.7 ... 42V
bb(on)
On-state resistance RON 220
Load current (ISO) I
Current limitation I
Operating temperature T
1.8A
L(ISO)
5A
L(SCr)
a
-30…+85°C
PG-TO220AB/5
Standard
5
Straight leads
5
1
mΩ
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V
bb
OUT
Load GND
3
5
Load
Voltage
source
V
Logic
Voltage
sensor
IN
2
ESD
4
ST
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
GND
Current
limit
unclamped
Open load
Short circuit
Gate
protection
Limit for
ind. loads
detection
detection
Temperature
sensor
PROFET
1
Signal GND
1
)
With external current limit (e.g. resistor R
=150 Ω) in GND connection, resistors in series with IN and ST
GND
connections, reverse load current limited by connected load.
Infineon Technologies AG 1 of 15 2006-Mar-28
PROFET
®
ITS 410 E2
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage, the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
O Output to the load
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) Vbb 65V
Load dump protection
3
)
R
= 2 Ω, RL= 6.6 Ω, t
I
2
)
V
LoadDump
= 400 ms, IN= low or high
d
= UA + Vs, UA = 13.5 V
V
Load dump
4
)
100V
Load current (Short circuit current, see page 4) IL self-limitedA
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), T
≤ 25 °C P
C
Inductive load switch-off energy dissipation, single pulse
V
=12V, T
bb
IL =1.8A, Z
=150°C, TC =150°C const.
j,start
=2.3H, 0 Ω:
L
Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
Tj
Ta
T
stg
50W
tot
-40 …+105
+150
-30 ...+85
°C
EAS 4.5J
V
1
ESD
kV
2
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC) VIN -0.5 ... +6V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
IIN
IST
±5.0
±5.0
mA
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
junction - ambient (free air):
2
)
Supply voltages higher than V
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3
)
RI = internal resistance of the load dump test pulse generator
4
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND and status pins, e.g. with a
bb(AZ)
R
R
thJC
thJA
--
--
--
--
2.5
75
K/W
Infineon Technologies AG 2 2006-Mar-28
PROFET
®
ITS 410 E2
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A Tj=25 °C:
= 12 V unless otherwise specified
bb
RON
min typ max
-- 190
220
mΩ
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
Short circuit shutdown delay after input pos. slope
V
ON
> V
, Tj =-40..+150°C:
ON(SC)
t
d(SC)
--
-- 450µs
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at V
I
= Vbb - V
OUT
ON(CL)
I
= 40 mA, Tj =-40..+150°C: V
L
= 1 A, Tj =-40..+150°C: ---- 75
L
Short circuit shutdown detection voltage
(pin 3 to 5) V
ON(CL)
ON(SC)
61
--
68 73 V
8.5 --V
Thermal overload trip temperature Tjt 150 -- --°C
Thermal hysteresis
Reverse battery (pin 3 to 1)
10
)
-Vbb -- -- 32V
∆
Tjt -- 10 -- K
Diagnostic Characteristics
Open load detection current
(on-condition)Tj=-40 ..150°C:
I
L (OL)
2
-- 150
mA
7
)
Add I
8
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
9
)
Short circuit current limit for max. duration of t
10
)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
, if IST > 0, add IIN, if VIN>5.5 V
ST
d(SC) max
=450 µs, prior to shutdown
Infineon Technologies AG 4 2006-Mar-28
PROFET
®
ITS 410 E2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V
Input and Status Feedback
Input turn-on threshold voltage Tj =-40..+150°C: V
Input turn-off threshold voltage Tj =-40..+150°C: V
Input threshold hysteresis ∆ V
Off state input current (pin 2), VIN = 0.4 V I
On state input current (pin 2), VIN = 5 V I
Status invalid after positive input slope
(short circuit) Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load) Tj=-40 ... +150°C:
= 12 V unless otherwise specified
bb
11
)
min typ max
1.5 -- 2.4V
IN(T+)
1.0 -- --V
IN(T-)
-- 0.5 --V
IN(T)
1 -- 30µA
IN(off)
10 25 70µA
IN(on)
t
d(ST SC)
-- -- 450µs
t
d(ST)
300 -- 1400µs
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +50 uA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
V
ST(high)
V
ST(low)
5.0
--
6
--
0.4
--
V
11
)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Infineon Technologies AG 5 2006-Mar-28
Loading...
+ 10 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.