INFINEON IR 2181S SMD SMD#IR

Data Sheet No. PD60172-E

IR2181(4

)(S)

HIGH AND LO W SIDE DRIVER

Features

Floating channel designed for bootstrap operation

•

Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune

Gate drive supply range from 10 to 20V

•

Undervoltage lockout for both channels

•

3.3V and 5V input logic compatible

•

Matched propagation delay for both channels

•

Logic and power ground +/- 5V offset.

•

Lower di/dt gate driver for better noise immunity

•

Output source/sink current capability 1.4A/1.8A

•

Description

The IR2181(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with independent high and low
side referenced output channels. Pro­prietary HVIC and latch immune
CMOS technologies enable rugge­dized monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel powe r
MOSFET or IGBT in the high side configuration which operates up to 600 volts.

IR2181/IR2183/IR2184 Feature Comparison

Part

2181 COM

21814

2183 Internal 500ns COM

21834

2184 Internal 500ns COM

21844

Packages

8-Lead SOIC

IR2181S

8-Lead PDIP

IR2181

Cross­Input
logic

HIN/LIN no none

HIN/LIN yes

IN/SD yes

conduction
prevention

logic

Dead-Time Ground Pins Ton/Toff

Program 0.4 ~ 5 us VSS/COM

Program 0.4 ~ 5 us VSS/COM

14-Lead PDIP

IR21814

VSS/COM

14-Lead SOIC

IR21814S

180/220 n s

180/220 n s

680/270 n s

T ypical Connection

up to 600V

V

CC

HIN

LIN

(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.

V
HIN
LIN

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V

CC

B

HO

V

S

LOCOM

IR2181

TO

LOAD

up to 600V

HO

V

V

CC

HIN

LIN

V

SS

HIN
LIN

V

V

CC

B

V

S

COM

SS

LO

IR21814

TO

LOAD

IR2181(4

) (S)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

V

SS

dVS/dt Allowable offset supply voltage transient — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High side floating absolute voltage -0.3 625
High side floating supply offset voltage VB - 25 VB + 0.3
High side floating output voltage VS - 0.3 V
Low side and logic fixed supply voltage -0.3 25
Low side output voltage -0.3 VCC + 0.3
Logic input voltage (HIN & LIN - IR2181/IR21814) VSS - 0.3 V
Logic ground (IR21814 only) V

Package power dissipation @ TA ≤ +25°C (8-lead PDIP) — 1.0

(8-lead SOIC) — 0.625
(14-lead PDIP) — 1.6
(14-lead SOIC) — 1.0

Thermal resistance, junction to ambient (8-lead PDIP) — 125

(8-lead SOIC) — 200

(14-lead PDIP) — 75

(14-lead SOIC) — 120
Junction temperature — 1 50
Storage temperature -50 150
Lead temperature (soldering, 10 seconds) — 3 00

- 25 V

CC

B

SS
CC

+ 0.3

+ 10

+ 0.3

V

W

°C/W

°C

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units

VB High side floating supply absolute voltage VS + 10 VS + 20
V

S

V

HO

V

CC

V

LO

V

IN

V

SS

T

A

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: HIN and LIN pins are internally clamped with a 5.2V zener diode.

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High side floating supply offset voltage Note 1 600
High side floating output voltage V
Low side and logic fixed supply voltage 10 20
Low side output voltage 0 V
Logic input voltage (HIN & LIN - IR2181/IR21814) VSS V
Logic ground (IR21814/IR21824 only) -5 5
Ambient temperature -40 125 °C

S

SS

V

B

CC

+ 5

V

IR2181(4

) (S)

Dynamic Electrical Characteristics

V

(VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C.

BIAS

Symbol Definition Min. Typ. Max. Units Test Conditions

t

on

t

off

MT Delay matching, HS & LS turn-on/off — 0 35

t
t

Turn-on propagation delay — 180 270 VS = 0V
Turn-off propagation delay — 220 330 VS = 0V or 600V

nsec

Turn-on rise time — 40 60 VS = 0V

r

Turn-off fall time — 20 35 VS = 0V

f

Static Electrical Characteristics

V

(VCC, VBS) = 15V, VSS = COM and TA = 25°C unless otherwise specified. The VIL, VIH and IIN parameters are

BIAS

referenced to VSS/COM and are applicable to the respective input leads HIN and LIN. The VO, IO and Ron parameters are
referenced to COM and are applicable to the respective output leads: HO and LO.

Symbol Definition Min. Typ. Max. Units Test Conditions

V

IH

V

IL

V

OH

V

OL

I

LK

I

QBS

I

QCC

I

IN+

I

IN-

V

CCUV+VCC

V

BSUV+

V

CCUV-

V

BSUV-

V

CCUVH

V

BSUVH

I

O+

I

O-

Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V
Low level output voltage, V
Offset supply leakage current — — 50 VB = VS = 600V
Quiescent VBS supply current 20 60 150 V
Quiescent VCC supply current 50 120 240 VIN = 0V or 5V
Logic “1” input bias current
Logic “0” input bias current

and VBS supply undervoltage positive going 8.0 8.9 9.8
threshold
VCC and V
threshold
Hysteresis 0.3 0.7 —

Output high short circuit pulsed current 1.4 1.9 — VO = 0V,

Output low short circuit pulsed current 1.8 2.3 — VO = 15V,

supply undervoltage negative going 7.4 8.2 9. 0

BS

(IR2181/IR21814 )
(IR2181/IR21814) — —

- V

BIAS

O

O

—
—

2.7 —

— — 1.2 IO = 0A
— — 0.1 IO = 0A

25

—

VCC = 10V to 20V

—

VCC = 10V to 20V

0.8

60

1.0

V

µA

V

A

= 0V or 5V

IN

VIN = 5V
VIN = 0V

PW ≤ 10 µs

PW ≤ 10 µs

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