INFINEON IPW90R1K2C3 User Manual
IPW90R1K2C3
CoolMOS™ Power Transistor
Features
• Lowest figure-of-merit R
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
ON
x Q
g
1)
for target applications
Product Summary
V
@ TJ=25°C 900 V
DS
R
DS(on),max
Q
g,typ
@TJ=25°C 1.2
PG-TO247
Ω
28 nC
Type Package Marking
IPW90R1K2C3 PG-TO247 9R1K2C
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
J
I
D
TC=25 °C
T
2)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=0.92 A, VDD=50 V
ID=0.92 A, VDD=50 V
V
V
GS
static V
AC (f>1 Hz)
P
tot
TC=25 °C
=100 °C
C
=0...400 V
DS
Value
5.1
3.2
10
68 mJ
0.31
0.92
50
±20
±30
83
A
A
V/ns
W
Operating and storage temperature
T
J
stg
-55 ... 150
°C
, T
Mounting torque M3 and M3.5 screws 60 Ncm
Rev. 1.0 page 1 2008-07-30
Maximum ratings, at Tj=25 °C, unless otherwise specified
IPW90R1K2C3
Parameter Symbol Conditions Unit
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
2)
4)
I
S
I
S,pulse
T
C
=25 °C
dv/dt 4 V/ns
Parameter Symbol Conditions Unit
Value
2.8
11
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
=25 °C, unless otherwise specified
J
R
thJC
R
thJA
T
sold
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 1.5 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
VDS=VGS, ID=0.31 mA
VDS=900 V, VGS=0 V,
T
=25 °C
j
V
=900 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=2.8 A,
T
=25 °C
j
V
=10 V, ID=2.8 A,
GS
T
=150 °C
j
900 - - V
2.5 3 3.5
--1µA
-10-
- - 100 nA
- 0.94 1.2
- 2.5 -
f =1 MHz, open drain - 1.3 -
Ω
Ω
Rev. 1.0 page 2 2008-07-30
IPW90R1K2C3
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
5)
Effective output capacitance, time
related
6)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=100 V,
V
GS
f =1 MHz
=0 V, VDS=0 V
V
GS
to 500 V
V
=400 V,
DD
V
=10 V, ID=2.8 A,
GS
=81.3 Ω
R
G
- 710 - pF
-35-
-23-
-86-
-70-ns
-20-
- 400 -
-40-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
gs
gd
g
plateau
V
=400 V, ID=2.8 A,
DD
V
=0 to 10 V
GS
- 3.2 - nC
-12-
- 28 tbd
- 4.6 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
ISD≤ID, di/dt≤200A/µs, V
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
DClink
J,max
=400V, V
V
SD
t
rr
Q
rr
I
rrm
peak<V(BR)DSS
VGS=0 V, IF=2.8 A,
T
=25 °C
j
VR=400 V, IF=IS,
di
/dt =100 A/µs
F
, TJ<T
, identical low side and high side switch
J,max
oss
- 0.8 1.2 V
- 310 - ns
- 3.7 - µC
-19-A
while VDS is rising from 0 to 50% V
while VDS is rising from 0 to 50% V
oss
DSS
.
DSS.
Rev. 1.0 page 3 2008-07-30
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