Datasheet IPW65R070C6 Datasheet
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Data Sheet
Rev. 2.0, 2011-03-15
Final
Industrial & Multimarket
drain
pin 2
gate
pin 1
source
pin 3
650V CoolMOS™ C6 Power Transistor IPW65R070C6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by Infineon
Technologies. CoolMOS™ C6 series combines the experience of the leading SJ
MOSFET supplier with high class innovation. The offered devices provide all
benefits of a fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching applications
even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM R
dson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
1)
• Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for
e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter Value Unit Related Links
V
@ T
DS
R
DS(on),max
Q
I
D,pulse
E
oss
Body diode d
j,max
g,typ
@ 400V 13 µJ
i/dt 300 A/µs
700 V IFX CoolMOS Webpage
0.07 IFX Design tools
170 nC
150 A
Type Package Marking
IPW65R070C6 PG-TO247 65C6070
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet 3 Rev. 2.0, 2011-03-15
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse E
Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
Gate source voltage V
Power dissipation P
Operating and storage temperature T
Mounting torque - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current I
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
3)
speed
1) Limited by T
2) Pulse width tp limited by T
j,max.
3) Identical low side and high side switch with identical R
1)
2)
2)
3)
I
D
I
D,pulse
AS
AR
AR
GS
tot
j,Tstg
S
I
S,pulse
dv/dt - - 15 V/ns VDS=0...400 V, I
dif/dt - - 300 A/µs
Maximum duty cycle D=0.75
j,max
--53.5 ATC= 25 °C
33.8 T
= 100°C
C
--150 ATC=25 °C
- - 1160 mJ ID=9.3 A,VDD=50 V
- - 1.76 ID=9.3 A,VDD=50 V
--9.3 A
=0...480 V
DS
-20 - 20 V static
-30 30 AC (f>1 Hz)
--391 WTC=25 °C
-55 - 150 °C
--46.3 ATC=25 °C
--150 ATC=25 °C
SD
T
=25 °C
j
; V
G
peak<V(BR)DSS
; Tj<T
j.max
I
,
D
3 Thermal characteristics
Table 3 Thermal characteristics TO-247
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction -
R
thJC
R
thJA
- - 0.32 °C/W
- - 62 leaded
ambient
Soldering temperature,
T
sold
- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads
Final Data Sheet 4 Rev. 2.0, 2011-03-15
Test Condition
from case for 10 s
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