IPW60R299CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit R
• Ultra low gate charge
ONxQg
Product Summary
VDS @ T
R
Q
j,max
DS(on),max
g,typ
• Extreme dv/dt rated
• High peak current capability
1)
• Qualified according to JEDEC
for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
Hard switching SMPS topologies
Type Package Ordering Code Marking
650 V
0.299
22 nC
PG-TO247-3-1
Ω
IPW60R299CP PG-TO247-3-1 SP000103251 6R299P
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
2)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=4.4 A, VDD=50 V
ID=4.4 A, VDD=50 V
V
V
GS
static V
AC (f >1 Hz)
P
tot
TC=25 °C
=100 °C
C
=0...480 V
DS
Value
11
7
34
290 mJ
0.44
4.4
50
±20
±30
96
A
A
V/ns
W
Operating and storage temperature
T
j
stg
-55 ... 150
°C
, T
Mounting torque M3 and M3.5 screws 60 Ncm
Rev. 2.1 page 1 2007-05-09
Maximum ratings, at Tj=25 °C, unless otherwise specified
IPW60R299CP
Parameter Symbol Conditions Unit
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
2)
4)
I
S
I
S,pulse
T
C
=25 °C
dv /dt 15 V/ns
Parameter Symbol Conditions Unit
Value
6.6
34
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 1.3 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
VDS=VGS, ID=0,44 mA
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=6.6 A,
T
=25 °C
j
V
=10 V, ID=6.6 A,
GS
T
=150 °C
j
600 - - V
2.5 3 3.5
--1µA
-10-
- - 100 nA
- 0.27 0.299
- 0.73
f =1 MHz, open drain - 1.9 -
Ω
Ω
Rev. 2.1 page 2 2007-05-09
IPW60R299CP
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
5)
related
Effective output capacitance, time
6)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=100 V,
V
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 480 V
V
=400 V,
DD
V
=10 V, ID=6,6 A,
GS
=4,3 Ω
R
G
- 1100 - pF
-60-
-46-
- 120 -
-10-ns
-5-
-40-
-5-
Gate Charge Characteristics
Gate to source charge
Q
gs
-5-nC
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
V
gd
g
plateau
V
=400 V, ID=6.6 A,
DD
V
=0 to 10 V
GS
- 7.6 -
-2229
- 5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
ISD<=ID, di/dt<=200A/µs, V
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
DClink
=400V, V
V
SD
t
rr
Q
rr
I
rrm
peak<V(BR)DSS
VGS=0 V, IF=6.6 A,
T
=25 °C
j
VR=400 V, IF=IS,
di
/dt =100 A/µs
F
, Tj<T
, identical low side and high side switch.
jmax
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 0.9 1.2 V
- 300 - ns
- 3.9 - µC
-26-A
DSS.
DSS.
Rev. 2.1 page 3 2007-05-09
1 Power dissipation 2 Safe operating area
P
=f(TC) ID=f(VDS); TC=25 °C; D =0
tot
parameter: t
100
10
2
p
limited by on-state
resistance
IPW60R299CP
1 µs
75
1
10
[W]
tot
P
50
[A]
D
I
10
0
25
-1
0
0 40 80 120 160
TC [°C]
10
10
0
10
1
VDS [V]
3 Max. transient thermal impedance 4 Typ. output characteristics
Z
=f(tP) ID=f(VDS); Tj=25 °C
thJC
parameter: D=t
1
10
/T parameter: V
p
45
GS
10 µs
100 µs
1 ms
DC
10 ms
10V
10
3
10
20 V
2
12 V
0
10
0.5
[K/W]
Z
0.2
0.1
thJC
0.05
-1
10
0.02
0.01
single pulse
-2
10
10
10
-4
-5
10
-3
10
-2
10
-1
10
0
tp [s]
30
[A]
D
I
15
0
0 5 10 15 20
VDS [V]
8 V
6 V
5.5 V
5 V
4.5 V
Rev. 2.1 page 4 2007-05-09
IPW60R299CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
=f(VDS); Tj=150 °C R
D
parameter: V
GS
=f(ID); Tj=150 °C
DS(on)
parameter: V
GS
25
1.8
1.6
5 V
5.5 V
[A]
D
I
20
15
10
8 V
10 V
12 V
5.5 V
5 V
20 V
6 V
]
Ω
[
R
DS(on)
1.4
1.2
1
0.8
0.6
5
4.5 V
0.4
0.2
0
0 5 10 15 20
VDS [V]
0
0 5 10 15 20 25
ID [A]
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R
=f(Tj); ID=6.6 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R
DS(on)
parameter: T
j
DS(on)max
6 V
7 V
6.5 V
10 V
1
0.8
0.6
]
Ω
[
DS(on)
R
0.4
98 %
typ
0.2
0
-60 -20 20 60 100 140 180
Tj [°C]
50
40
C °25
30
[A]
D
I
20
C °150
10
0
0246810
VGS [V]
Rev. 2.1 page 5 2007-05-09
IPW60R299CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
V
=f(Q
GS
parameter: V
); ID=6.6 A pulsed IF=f(VSD)
gate
DD
10
9
8
parameter: T
2
10
j
25 °C, 98%
[V]
GS
V
7
6
120 V
400 V
5
[A]
F
I
10
1
150 °C
25 °C
4
0
3
10
2
1
-1
0
0 5 10 15 20 25
Q
[nC]
gate
10
0 0.5 1 1.5 2
VSD [V]
11 Avalanche energy 12 Drain-source breakdown voltage
E
=f(Tj); ID=4.4 A; VDD=50 V V
AS
300
=f(Tj); ID=0.25 mA
BR(DSS)
700
150 °C, 98%
660
200
[V]
[mJ]
AS
E
100
0
20 60 100 140 180
Tj [°C]
620
BR(DSS)
V
580
540
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 2.1 page 6 2007-05-09
13 Typ. capacitances 14 Typ. Coss stored energy
IPW60R299CP
C =f(V
C [pF]
); VGS=0 V; f =1 MHz E
DS
5
10
4
10
Ciss
Coss
Crss
10
10
10
10
3
2
1
0
0 100 200 300 400 500
VDS [V]
= f(VDS)
oss
8
6
[µJ]
4
oss
E
2
0
0 100 200 300 400 500 600
VDS [V]
Rev. 2.1 page 7 2007-05-09
Definition of diode switching characteristics
IPW60R299CP
Rev. 2.1 page 8 2007-05-09
PG-TO247-3-21-41: Outlines
IPW60R299CP
Dimensions in mm/inches
Rev. 2.1 page 9 2007-05-09
IPW60R299CP
A
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.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
ll Rights Reserved.
ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologie
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office
Warnings
Due to technical requirements components may contain dangerous substances. For information on the type
in question please contact your nearest Infineon Technologies Office
Infineon Technologies Components may only be used in life-support devices or systems with the expres
written approval of Infineon Technologies, if a failure of such components can reasonably be expected t
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/o
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of th
user or other persons may be endangered
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Rev. 2.1 page 10 2007-05-09
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