Infineon FZ1000R25KF1 Data Sheet
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1000 R 25 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
t - value, Diode
I
= 80 °C I
T
C
= 25 °C I
T
C
t
= 1 ms, TC = 80°C I
P
T
=25°C, Transistor P
C
t
= 1 ms I
P
= 0V, tp = 10ms, TVj = 125°C
V
R
V
CES
C,nom.
CRM
V
GES
I
FRM
2
I
2500 V
1000 A
C
1600 A
2000 A
tot
10,4 kW
+/- 20V V
F
1000 A
2000 A
t
400
kA2s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
IC = 1000A, VGE = 15V, Tvj = 25°C V
= 1000A, VGE = 15V, Tvj = 125°C
I
C
I
= 80mA, VCE = VGE, Tvj = 25°C V
C
V
= -15V ... +15V Q
GE
f = 1MHz,T
f = 1MHz,T
V
CE
V
CE
= 25°C,VCE = 25V, VGE = 0V C
vj
= 25°C,VCE = 25V, VGE = 0V C
vj
= 2500V, VGE = 0V, Tvj = 25°C I
= 0V, VGE = 20V, Tvj = 25°C I
V
ISOL
min. typ. max.
CE sat
GE(th)
res
CES
GES
- 3,0 3,5 V
- 3,8 4,3 V
4,3 5,3 6,3 V
- 18 - µC
G
-95-nF
ies
- 8 - nF
- -20mA
- - 400 nA
5kV
prepared by: Oliver Schilling date of publication: 01.09.2001
approved by: Thomas Schütze revision: 3
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FZ101@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1000 R 25 KF1
Charakteristische Werte / Characteristic values
Transistor / Transistor
= 1000A, VCE = 1200V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
I
C
V
= ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 25°C, t
GE
VGE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 125°C,
I
= 1000A, VCE = 1200V
C
V
= ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 25°C, t
GE
VGE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 125°C,
I
= 1000A, VCE = 1200V
C
V
= ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 25°C, t
GE
VGE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 125°C,
= 1000A, VCE = 1200V
I
C
V
= ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 25°C, t
GE
VGE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 125°C,
I
= 1000A, VCE = 1200V, VGE = ±15V
C
R
= 1,3Ω, CGE=136nF, Tvj = 125°C , LS = 60nH E
G
IC = 1000A, VCE = 1200V, VGE = ±15V
R
= 2,7Ω, CGE=136nF, Tvj = 125°C , LS = 60nH E
G
tP ≤ 10µsec, VGE ≤ 15V
T
≤125°C, VCC=1200V, V
Vj
CEmax=VCES -LsCE
·dI/dt I
min. typ. max.
d,on
d,off
SC
L
sCE
- 1,4 - µs
- 1,5 - µs
- 0,25 - µs
r
- 0,25 - µs
- 2,2 - µs
- 2,2 - µs
- 0,2 - µs
f
- 0,2 - µs
- 1400 - mWs
on
- 1000 - mWs
off
- 4000 - A
- 12 - nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
= 1000A, VGE = 0V, Tvj = 25°C V
I
F
= 1000A, VGE = 0V, Tvj = 125°C
I
F
IF = 1000A, - diF/dt = 4000A/µs
V
= 1200V, VGE = -10V, Tvj = 25°C I
R
VR = 1200V, VGE = -10V, Tvj = 125°C
I
= 1000A, - diF/dt = 4000A/µs
F
V
= 1200V, VGE = -10V, Tvj = 25°C Q
R
VR = 1200V, VGE = -10V, Tvj = 125°C
I
= 1000A, - diF/dt = 4000A/µs
F
V
= 1200V, VGE = -10V, Tvj = 25°C E
R
VR = 1200V, VGE = -10V, Tvj = 125°C
R
CC´+EE´
- 0,19 - mΩ
min. typ. max.
- 2,3 2,7 V
F
- 2,3 2,7 V
RM
rec
- 950 - A
- 1000 - A
- 520 - µAs
r
- 900 - µAs
- 340 - mWs
- 650 - mWs
2
FZ101@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1000 R 25 KF1
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur Sperrschicht
junction operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode/Diode, DC - - 0,024 K/W
pro Modul / per Module
λ
≤ 1 W/m*K / λ
Paste
Schaltvorgänge IGBT(RBSOA);Diode(SOA)
switching operation IGBT(RBSOA);Diode(SOA)
grease
≤ 1 W/m*K
Mechanische Eigenschaften / Mechanical properties
min. typ. max.
R
thJC
R
thCK
T
T
vj,op
T
stg
- - 0,012 K/W
- 0,008 - K/W
- - 150 °C
vj
-40 - 125 °C
-40 - 125 °C
Gehäuse, siehe Anlage
case, see appendix
Material Modulbodenplatte
material of module baseplate
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
M1 5 Nm
terminals M4 M2 2 Nm
terminals M8 8 - 10 Nm
G 1000 g
AlSiC
AlN
32 mm
19,1 mm
>400
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3
FZ101@3.xls
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