INFINEON FP50R12KE3 User Manual

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

FP50R12KE3

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Diode Gleichrichter/ Diode Rectifier

Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage

Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output

Durchlaßstrom Grenzeffektivwert proChip
Forward current RMS maximum per Chip

Stoßstrom Grenzwert
surge forward current
Grenzlastintegral

2

t - value

I

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

Tvj = 25°C V

TC = 80°C I

TC = 80°C I
tP = 10 ms, T

= 10 ms, T

t

P

= 10 ms, T

t

P

t

= 10 ms, T

P

= 25°C V

T

vj

= 25°C I

vj

= 150°C

vj

= 25°C

vj

= 150°C

vj

Tc = 80 °C

= 25 °C I

T

C

= 1 ms, TC =

t

P

TC = 25°C P

80 °C

RRM

RMSmax

FRMSM

FSM

2

I

t

CES

I

C,nom.

C

I

CRM

tot

V

GES

1600 V

115 A

80 A

500 A
400 A

1250

800

A2s
A

1200 V

50 A
75 A

100 A

270 W

+/- 20V V

2

s

Diode Wechselrichter/ Diode Inverter

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forw. current

Grenzlastintegral

2

I

t - value

= 1 ms I

t

P

V

= 0V, tp = 10ms, Tvj = 125°C

R

Transistor Brems-Chopper/ Transistor Brake-Chopper

Kollektor-Emitter-Sperrspannung
collector-emitter voltage

Kollektor-Dauergleichstrom
DC-collector current

Periodischer Kollektor Spitzenstrom
repetitive peak collector current

Gesamt-Verlustleistung
total power dissipation

Tvj = 25°C V
TC = 80 °C I

= 25 °C I

T

C

tP = 1 ms, TC = 80°C I

= 25°C P

T

C

Gate-Emitter-Spitzenspannung
gate-emitter peak voltage

Diode Brems-Chopper/ Diode Brake-Chopper

Dauergleichstrom
DC forward current

Periodischer Spitzenstrom
repetitive peak forw. current

tP = 1 ms I

I

FRM

2

I

CES

C,nom.

CRM

V

GES

I

FRM

F

50 A

100 A

t

690

A2s

1200 V

40 A

C

55 A
80 A

tot

200 W

+/- 20V V

F

15 A

30 A

prepared by: Andreas Schulz date of publication:23.04.2002
approved by: Robert Severin revision: 2

1(11)

DB-PIM-IGBT3_2Serie.xls

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

Modul Isolation/ Module Isolation

Isolations-Prüfspannung
insulation test voltage

FP50R12KE3

RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Diode Gleichrichter/ Diode Rectifier

Durchlaßspannung
forward voltage

Schleusenspannung
threshold voltage

Ersatzwiderstand
slope resistance

Sperrstrom
reverse current

Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Eingangskapazität
input capacitance

Kollektor-Emitter Reststrom
collector-emitter cut off current

Gate-Emitter Reststrom
gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)

Anstiegszeit (induktive Last)
rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)

Fallzeit (induktive Last)
fall time (inductive load)

Einschaltverlustenergie pro Puls
turn-on energy loss per pulse

Abschaltverlustenergie pro Puls
turn-off energy loss per pulse

Kurzschlußverhalten
SC Data

Tvj = 150°C, IF =

Tvj = 150°C V

Tvj = 150°C r

= 150°C, VR=

T

vj

TC = 25°C R

V

= 15V, Tvj = 25°C, IC =

GE

= 15V, Tvj = 125°C, IC =

V

GE

= VGE, Tvj = 25°C, IC =

V

CE

f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V

VGE = 0V, Tvj = 25°C, VCE =

= 0V, VGE =20V, Tvj =25°C I

V

CE

IC = I

, VCC =

Nenn

= ±15V, Tvj = 25°C, RG =

V

GE

= ±15V, Tvj = 125°C, RG =

V

GE

I

= I

, VCC =

C

Nenn

= ±15V, Tvj = 25°C, RG =

V

GE

V

= ±15V, Tvj = 125°C, RG =

GE

I

= I

, VCC =

C

Nenn

= ±15V, Tvj = 25°C, RG =

V

GE

= ±15V, Tvj = 125°C, RG =

V

GE

I

= I

, VCC =

C

Nenn

= ±15V, Tvj = 25°C, RG =

V

GE

= ±15V, Tvj = 125°C, RG =

V

GE

I

= I

, VCC =

C

Nenn

= ±15V, Tvj = 125°C, RG =

V

GE

Lσ =
IC = I

, VCC =

Nenn

= ±15V, Tvj = 125°C, RG =

V

GE

Lσ =

≤ 10µs, VGE ≤ 15V, RG =

t

P

≤125°C, V

T

vj

CC

V

ISOL

2,5 kV

min. typ. max.

50 A

1600 V

V

F

(TO)

T

I

R

AA'+CC'

-1-V

- - 0,8 V

- - 6,5

-3-mA

- 4 -

min. typ. max.

50 A
50 A - 2 - V

2,0 mA

1200 V

600 V
18 Ohm
18 Ohm - 90 - ns
600 V
18 Ohm
18 Ohm - 45 - ns
600 V
18 Ohm
18 Ohm - 520 - ns
600 V
18 Ohm
18 Ohm - 90 - ns
600 V
18 Ohm
45 nH
600 V
18 Ohm
45 nH
18 Ohm

=

720 V

V

V

I

CE sat

GE(TO)

C

ies

CES

GES

t

d,on

t

r

t

d,off

t

f

E

on

E

off

I

SC

- 1,7 2,15 V

5,0 5,8 6,5 V

- 3,5 - nF

--5mA

- - 400 nA

-85-ns

-30-ns

- 420 - ns

-65-ns

- 6,6 - mWs

- 5,8 - mWs

- 200 - A

mΩ

mΩ

2(11)

DB-PIM-IGBT3_2Serie.xls

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

FP50R12KE3

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values

Modulinduktivität
stray inductance module

Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip

Diode Wechselrichter/ Diode Inverter

Durchlaßspannung
forward voltage

Rückstromspitze
peak reverse recovery current

Sperrverzögerungsladung
recovered charge

Abschaltenergie pro Puls
reverse recovery energy

Transistor Brems-Chopper/ Transistor Brake-Chopper

Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage

Gate-Schwellenspannung
gate threshold voltage

Eingangskapazität
input capacitance

Kollektor-Emitter Reststrom
collector-emitter cut off current

Gate-Emitter Reststrom
gate-emitter leakage current

Schaltverluste und -bedingungen
Switching losses and conditions

Diode Brems-Chopper/ Diode Brake-Chopper

Durchlaßspannung
forward voltage

Schaltverluste und -bedingungen
Switching losses and conditions

NTC-Widerstand/ NTC-Thermistor

Nennwiderstand
rated resistance

Abweichung von R
deviation of R

100

100

Verlustleistung
power dissipation

B-Wert
B-value

TC = 25°C R

V

= 0V, Tvj = 25°C, IF =

GE

= 0V, Tvj = 125°C, IF =

V

GE

, - diF/dt =

I

F=INenn

= -10V, Tvj = 25°C, VR =

V

GE

V

= -10V, Tvj = 125°C, VR =

GE

I

, - diF/dt =

F=INenn

= -10V, Tvj = 25°C, VR =

V

GE

V

= -10V, Tvj = 125°C, VR =

GE

I

, - diF/dt =

F=INenn

= -10V, Tvj = 25°C, VR =

V

GE

= -10V, Tvj = 125°C, VR =

V

GE

V

= 15V, Tvj = 25°C, IC =

GE

= 15V, Tvj = 125°C, IC =

V

GE

= VGE, Tvj = 25°C, IC =

V

CE

f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V

VGE = 0V, Tvj = 25°C, VCE =

= 0V, VGE = 20V, Tvj = 25°C I

V

CE

siehe Wechselrichter in Dbl FP40R12KE3
see inverter in datasheet FP40R12KE3

T

= 25°C, IF =

vj

T

= 125°C, IF =

vj

siehe Wechselrichter in Dbl FP15R12KE3
see inverter in datasheet FP15R12KE3

TC = 25°C R

TC = 100°C, R

T

= 25°C P

C

R

= R1 exp [B(1/T2 - 1/T1)] B

2

= 493 Ω

100

min. typ. max.

L

σCE

CC'+EE'

- - 60 nH

- 7 -

mΩ

min. typ. max.

50 A
50 A - 1,65 - V
1200 A/µs
600 V
600 V - 50 - A
1200 A/µs
600 V
600 V - 12 - µAs
1200 A/µs
600 V
600 V - 4,4 - mWs

V

I

RM

Q

E

rec

- 1,65 2,15 V

F

-51-A

- 6,2 - µAs

r

- 2,1 - mWs

min. typ. max.

40 A
40 A - 2,15 - V

1,5 mA

1200 V

V

V

I

CE sat

GE(TO)

C

ies

CES

GES

- 1,8 2,3 V

5,0 5,8 6,5 V

- 2,5 - nF

- 5,0 500 mA

- - 400 nA

min. typ. max.

40 A
40 A - 2,55 - V

V

- 2,35 2,8 V

F

min. typ. max.

25

∆R/R

25

25/50

-5-

-5 5 %

3375 K

kΩ

20 mW

3(11)

DB-PIM-IGBT3_2Serie.xls

Technische Information / Technical Information

IGBT-Module
IGBT-Modules

FP50R12KE3

Thermische Eigenschaften / Thermal properties

Innerer Wärmewiderstand
thermal resistance, junction to case

Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode
thermal resistance, case to heatsink

Höchstzulässige Sperrschichttemperatur
maximum junction temperature

Betriebstemperatur
operation temperature

Lagertemperatur
storage temperature

Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter - - 0,45 K/W
Diode Wechsr./ Diode Inverter - - 0,75 K/W
Trans. Bremse/ Trans. Brake - - 0,6 K/W
Diode Bremse/ Diode Brake - - 1,5 K/W

λ

Paste

Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter - 0,04 - K/W

λ

grease

Mechanische Eigenschaften / Mechanical properties

=1W/m*K

=1W/m*K

min. typ. max.

R

thJC

R

thCK

T

T

op

T

stg

- - 0,65 K/W

- 0,04 - K/W

- 0,02 - K/W

- - 150 °C

vj

-40 - 125 °C

-40 - 125 °C

Innere Isolation
internal insulation

CTI
comperative tracking index

Anzugsdrehmoment f. mech. Befestigung
mounting torque

Gewicht
weight

Luftstrecke
clearance

Kriechstrecke
creeping distance

Schraube M 5 M 3 - 6 Nm
screw M 5

G 300 g

Pin-Erde
Pin-GND

Pin-Erde
Pin-GND

Transiente Thermische Eigenschaften / Transient Thermal properties

IGBT-Wechselrichter

IGBT-Inverter

ri [K/W]

1 5,077E-02

2 7,893E-02

2,345E-03 3,333E-037,637E-02

2,820E-01

Diode-Wechselrichter

ri [K/W]τi [s] τi [s]

4,933E-01

Al2O

3

225

7,5 mm

10 mm

Diode-Inverter

3,429E-02

3 2,032E-01

4 1,142E-01

4(11)

2,820E-02

1,128E-01

1,421E-01

4,501E-02

1,294E-01

7,662E-01

DB-PIM-IGBT3_2Serie.xls