INFINEON CFY67 DATA SHEET

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HiRel K-Band GaAs Super Low Noise HEM T

HiRel Discrete and Microwave Semiconductor

•

• Pseudo-morphic AlGaAs/InGaAs/G aAs HEMT

• For professional super low-noise amplifiers

• For frequencies from 500 MHz to > 20 GHz

CFY67

34

• Hermetically sealed microwave package

12

• Super low noise figure, high associated g ain

• Space Qualified

ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen ( t bc.)

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Pin Configuration Package

1234

CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)

- see below G S D S Micro-X

CFY67-10 (ql)
CFY67-10P (ql)

CFY67-nnl: specifies gain and output power levels (see electrical characteristics)

(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1699

H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1699

(see order instructions for or der ing example)

Semiconductor Group 1 of 10 Draft D, September 99

CFY67

Maximum Ratings

Parameter Symbol Values Unit

Drain-source voltage V
Drain-gate voltage V
Gate-source voltage (reverse / forward) V
Drain current I
Gate forward current I
RF Input Power, C- and X-Band

1)

Junction temperature T
Storage temperature r ange T
Total power dissipation
Soldering temperature

2)

3)

Thermal Resistance

Junction-soldering point R

P

P
T

DS

DG

GS

D

G

RF,in

J

stg

tot

sol

th JS

3.5 V

4.5 V

- 3... + 0.5 V
60 mA
2mA
+ 10 dBm
150

- 65... + 150

°C
°C

200 mW
230 °C

≤ 515 (tbc.)

K/W

Notes.:

1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.

2) At T

= + 47 °C. For TS > + 47 °C derating is required.

S

3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.

Semiconductor Group 2 of 10 Draft D, September 99

CFY67

Electrical Characteristics (at T

=25°C; unless otherwise specified)

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Drain-source saturation current

= 2 V, VGS = 0 V

V

DS

Gate threshold voltage

= 2 V, ID = 1 mA

V

DS

Drain current at pinch-off

= 1.5 V, VGS = - 3 V

V

DS

Gate leakage current at pinch- off

= 1.5 V, VGS = - 3 V

V

DS

Transconductance

= 2 V, ID = 15 mA

V

DS

I

Dss

-V

I

Dp

-I

g

Gth

Gp

m15

15 30 60 mA

0.2 0.7 2.0 V

-< 50-µA

- < 50 200 µA

50 65 - mS

Gate leakage current at oper ation

= 2 V, ID = 15 mA

V

DS

Thermal resistance
junction to soldering point

-I

R

G15

th JS

-< 0.52µA

- 450 - K/W

Semiconductor Group 3 of 10 Draft D, September 99

Electrical Characteristics (continued)

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

CFY67

Noise figure

1)

NF dB

VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06 - 0.5 0.6
CFY67-08, -08P - 0.7 0.8
CFY67-10, 10P - 0.9 1.0

Associated gain.

1)

G

a

VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06 11.5 12.5 ­CFY67-08, -08P 11.0 11.5 ­CFY67-10, 10P 10.5 11.0 -

2)

Output power at 1 dB gain compression

P

1dB

VDS = 2 V, ID = 20 mA, f = 12 GHz
CFY67-06, -08, -10 - 11.0 ­CFY67-08P, -10P 10.0 11.0 -

dB

dBm

Notes.:

1) Noise figure / sssociated gain characteristics given for minimum noise figure matching

conditions (fixed generic matching , no fine-tuning).

2) Output power characteristics given for opt imum output power matching conditions (fixed

generic matching, no fine-tuning).

Semiconductor Group 4 of 10 Draft D, September 99

Typical Common Source S-Parameters

CFY67

CFY67-08: V

f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12MAG

[GHz] [magn] [angle] [magn] [angle] [m agn] [angle] [magn] [angle] [magn] [dB] [dB]

0,5 0,963 -15 5,315 165 0,0111 74 0,655 -14 0,40 26,8
1,0 0,938 -23 5,182 159 0,0225 68 0,639 -18 0,39 23,6
1,5 0,913 -33 5,060 150 0,0317 62 0,625 -23 0,42 22,0
2,0 0,889 -42 4,940 142 0,0411 57 0,611 -28 0,43 20,8
2,5 0,865 -52 4,824 133 0,0509 53 0,596 -35 0,43 19,8
3,0 0,844 -62 4,715 124 0,0585 46 0,582 -41 0,45 19,1
3,5 0,823 -72 4,591 115 0,0650 41 0,567 -47 0,47 18,5
4,0 0,800 -81 4,450 107 0,0714 36 0,552 -53 0,50 17,9
4,5 0,779 -91 4,319 99 0,0768 31 0,534 -60 0,52 17,5
5,0 0,761 -100 4,183 91 0,0811 25 0,520 -66 0,54 17,1
5,5 0,743 -109 4,043 83 0,0850 20 0,500 -72 0,58 16,8
6,0 0,725 -117 3,906 75 0,0885 15 0,490 -77 0,60 16,4
6,5 0,708 -125 3,769 68 0,0917 11 0,477 -83 0,63 16,1
7,0 0,690 -132 3,640 61 0,0942 7 0,467 -88 0,67 15,9
7,5 0,673 -139 3,529 54 0,0962 3 0,455 -93 0,71 15,6
8,0 0,656 -146 3,427 48 0,0978 -1 0,442 -97 0,76 15,4
8,5 0,640 -153 3,344 41 0,0998 -5 0,430 -101 0,79 15,3
9,0 0,625 -160 3,271 34 0,1010 -9 0,417 -104 0,84 15,1

9,5 0,611 -168 3,202 28 0,1027 -12 0,406 -108 0,87 14,9
10,0 0,597 -175 3,143 21 0,1033 -16 0,393 -113 0,91 14,8
10,5 0,586 177 3,089 15 0,1044 -20 0,381 -118 0,94 14,7
11,0 0,576 169 3,041 8 0,1056 -24 0,370 -123 0,96 14,6
11,5 0,564 161 3,002 1 0,1068 -28 0,358 -129 0,98 14,5
12,0 0,554 154 2,960 -5 0,1070 -32 0,351 -134 1,01 14,4 13,8
12,5 0,547 146 2,923 -12 0,1076 -36 0,343 -140 1,03 14,3 13,3
13,0 0,536 139 2,886 -19 0,1076 -41 0,336 -146 1,06 14,3 12,7
13,5 0,529 131 2,848 -26 0,1081 -45 0,330 -151 1,09 14,2 12,4
14,0 0,522 124 2,815 -33 0,1087 -50 0,325 -156 1,11 14,1 12,1
14,5 0,517 116 2,787 -40 0,1087 -55 0,320 -161 1,13 14,1 11,9
15,0 0,510 108 2,765 -46 0,1093 -60 0,315 -167 1,14 14,0 11,7
15,5 0,505 99 2,751 -54 0,1090 -65 0,311 -172 1,16 14,0 11,6
16,0 0,502 91 2,735 -61 0,1090 -71 0,305 -177 1,18 14,0 11,4
16,5 0,499 82 2,719 -68 0,1091 -77 0,301 177 1,19 14,0 11,3
17,0 0,498 74 2,722 -75 0,1097 -82 0,297 172 1,19 13,9 11,3
17,5 0,498 68 2,741 -80 0,1103 -87 0,294 168 1,18 14,0 11,4
18,0 0,498 62 2,760 -84 0,1107 -90 0,290 165 1,17 14,0 11,5

= 2 V, ID = 15 mA, Zo = 50 Ω

DS

Semiconductor Group 5 of 10 Draft D, September 99

Typical Common Source S-Parameters (continued)

CFY67

CFY67-06: V

f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12MAG

[GHz] [mag] [ang] [mag] [ang] [m ag] [ang] [mag] [ang] [mag] [dB] [dB]

0,5 0,962 -13 6,112 166 0,0111 76 0,539 -15 0,42 27,4

1,0 0,937 -22 5,956 159 0,0211 69 0,525 -19 0,42 24,5

1,5 0,913 -33 5,810 150 0,0302 64 0,511 -24 0,44 22,8

2,0 0,889 -41 5,690 142 0,0394 58 0,498 -30 0,46 21,6

2,5 0,860 -51 5,522 133 0,0484 53 0,484 -36 0,48 20,6

3,0 0,834 -61 5,386 124 0,0567 48 0,469 -43 0,50 19,8

3,5 0,810 -71 5,236 116 0,0637 43 0,456 -49 0,52 19,1

4,0 0,784 -80 5,067 107 0,0702 38 0,440 -55 0,55 18,6

4,5 0,761 -90 4,911 99 0,0760 33 0,423 -61 0,58 18,1

5,0 0,740 -99 4,752 91 0,0809 28 0,410 -67 0,60 17,7

5,5 0,720 -107 4,586 84 0,0851 24 0,397 -73 0,63 17,3

6,0 0,701 -116 4,420 76 0,0889 19 0,385 -79 0,66 17,0

6,5 0,682 -124 4,260 69 0,0918 15 0,373 -84 0,69 16,7

7,0 0,663 -131 4,107 62 0,0941 11 0,362 -89 0,73 16,4

7,5 0,644 -139 3,974 55 0,0962 7 0,351 -93 0,77 16,2

8,0 0,627 -148 3,852 49 0,0980 3 0,343 -98 0,80 15,9

8,5 0,611 -157 3,747 42 0,0995 -1 0,333 -102 0,83 15,8

9,0 0,595 -165 3,659 35 0,1008 -5 0,323 -107 0,86 15,6

9,5 0,581 -173 3,571 29 0,1022 -9 0,313 -112 0,90 15,4
10,0 0,567 178 3,497 22 0,1039 -13 0,303 -116 0,92 15,3
10,5 0,556 170 3,430 16 0,1049 -17 0,293 -121 0,95 15,1
11,0 0,546 163 3,368 9 0,1064 -21 0,284 -127 0,98 15,0
11,5 0,537 155 3,317 3 0,1078 -26 0,274 -131 1,00 14,9
12,0 0,528 149 3,265 -4 0,1093 -30 0,265 -135 1,02 14,8 13,8
12,5 0,520 142 3,216 -10 0,1105 -35 0,255 -139 1,05 14,6 13,3
13,0 0,513 135 3,169 -17 0,1116 -39 0,246 -143 1,07 14,5 12,9
13,5 0,506 128 3,120 -24 0,1126 -44 0,235 -146 1,10 14,4 12,5
14,0 0,498 121 3,080 -30 0,1137 -49 0,225 -150 1,12 14,3 12,2
14,5 0,492 113 3,044 -37 0,1151 -54 0,215 -155 1,14 14,2 12,0
15,0 0,489 106 3,014 -44 0,1160 -59 0,207 -159 1,15 14,1 11,8
15,5 0,484 98 2,990 -51 0,1171 -65 0,200 -163 1,16 14,1 11,6
16,0 0,485 91 2,967 -58 0,1185 -71 0,193 -167 1,17 14,0 11,5
16,5 0,485 83 2,945 -65 0,1197 -77 0,187 -171 1,17 13,9 11,4
17,0 0,485 75 2,947 -71 0,1206 -82 0,182 -175 1,17 13,9 11,4
17,5 0,487 69 2,961 -77 0,1215 -87 0,177 -178 1,16 13,9 11,5
18,0 0,490 64 2,979 -81 0,1230 -90 0,174 179 1,14 13,8 11,6

= 2 V, ID = 15 mA, Zo = 50 Ω

DS

Semiconductor Group 6 of 10 Draft D, September 99

Typical Common Source Noise-Parameters

CFY67

CFY67-08: V

fNF

= 2 V, ID = 15 mA, Zo = 50 Ω

DS

|Γ

min

|<Γ

opt

opt

[GHz] [dB] [m agn] [angle]

1 0,29 0,756 14 15,60
2 0,30 0,690 28 14,65
3 0,34 0,643 43 13,56
4 0,38 0,606 58 12,10
5 0,41 0,578 73 10,53
6 0,46 0,553 87 8,86
7 0,50 0,534 102 7,16
8 0,55 0,518 116 5,62

9 0,60 0,505 131 4,29
10 0,64 0,495 145 3,23
11 0,69 0,486 159 2,53
12 0,73 0,476 173 2,22
13 0,78 0,467 -173 2,37
14 0,84 0,455 -160 2,96
15 0,88 0,443 -146 4,01
16 0,93 0,428 -132 5,47
17 0,99 0,412 -118 7,26
18 1,05 0,394 -103 9,61

R

[Ω]

n

Semiconductor Group 7 of 10 Draft D, September 99

CFY67

Order Instructions:

Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device f amily and quality level
only.

Ordering Form:

Ordering Code: Q..........

CFY67 -(nnl) (ql)

-(nnl) Noise Figure/Gain and/or Power Level
(ql): Qualit y Level

Ordering Example:

Ordering Code: Q62702F1698
CFY67-08P ES

For CFY67, Noise Figure/Gain/Power Level 08P:

NF < 0.8 dB, G

in ESA Space Quality Level

Further Informations:

See our WWW-Pages:

- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm

- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm

Please contact also our marketing division :

> 11.0 dB, P

a

> 10 dBm @ 12 GHz

1dB

Tel.: ++89 234 24480
Fax.: ++89 234 28438
e-mail: [e-mail]
Address: Infineon Technologies Semiconductors,

High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich

Semiconductor Group 8 of 10 Draft D, September 99

CFY67

Micro-X Package

Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.

Infineon Technologies AG 1998. All Rights Reserved.

As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.

The information describes the type of component and shall
not be considered as assured c haracteristics.

Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please

contact the Offic es of Sem ic onduc tor Group in Germ any or
the Infineon Technologies Companies and
Representatives woldwide (see address list).

Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, S emiconductor Group.

Infineon Technologies Semiconductors is a cert i f i ed CECC
and QS9000 manufacturer (this i ncludes ISO 9000).

Semiconductor Group 9 of 10 Draft D, September 99