INFINEON CFY67 DATA SHEET

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HiRel K-Band GaAs Super Low Noise HEM T
HiRel Discrete and Microwave Semiconductor
Pseudo-morphic AlGaAs/InGaAs/G aAs HEMT
For professional super low-noise amplifiers
For frequencies from 500 MHz to > 20 GHz
CFY67
34
12
Super low noise figure, high associated g ain
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004, Type Variant No.s 01 to 04, 05 foreseen ( t bc.)
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
1234
CFY67-06 (ql) CFY67-08 (ql) CFY67-08P (ql)
- see below G S D S Micro-X
CFY67-10 (ql) CFY67-10P (ql)
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1699
H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1699
(see order instructions for or der ing example)
Semiconductor Group 1 of 10 Draft D, September 99
CFY67
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V Drain-gate voltage V Gate-source voltage (reverse / forward) V Drain current I Gate forward current I RF Input Power, C- and X-Band
1)
Junction temperature T Storage temperature r ange T Total power dissipation Soldering temperature
2)
3)
Thermal Resistance
Junction-soldering point R
P
P T
DS
DG
GS
D
G
RF,in
J
stg
tot
sol
th JS
3.5 V
4.5 V
- 3... + 0.5 V 60 mA 2mA + 10 dBm 150
- 65... + 150
°C °C
200 mW 230 °C
515 (tbc.)
K/W
Notes.:
1) For VDS 2 V. For VDS > 2 V, derating is required.
2) At T
= + 47 °C. For TS > + 47 °C derating is required.
S
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
Semiconductor Group 2 of 10 Draft D, September 99
CFY67
Electrical Characteristics (at T
=25°C; unless otherwise specified)
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source saturation current
= 2 V, VGS = 0 V
V
DS
Gate threshold voltage
= 2 V, ID = 1 mA
V
DS
Drain current at pinch-off
= 1.5 V, VGS = - 3 V
V
DS
Gate leakage current at pinch- off
= 1.5 V, VGS = - 3 V
V
DS
Transconductance
= 2 V, ID = 15 mA
V
DS
I
Dss
-V
I
Dp
-I
g
Gth
Gp
m15
15 30 60 mA
0.2 0.7 2.0 V
-< 50A
- < 50 200 µA
50 65 - mS
Gate leakage current at oper ation
= 2 V, ID = 15 mA
V
DS
Thermal resistance junction to soldering point
-I
R
G15
th JS
-< 0.5A
- 450 - K/W
Semiconductor Group 3 of 10 Draft D, September 99
Electrical Characteristics (continued)
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
CFY67
Noise figure
1)
NF dB
VDS = 2 V, ID = 15 mA, f = 12 GHz CFY67-06 - 0.5 0.6 CFY67-08, -08P - 0.7 0.8 CFY67-10, 10P - 0.9 1.0
Associated gain.
1)
G
a
VDS = 2 V, ID = 15 mA, f = 12 GHz CFY67-06 11.5 12.5 ­CFY67-08, -08P 11.0 11.5 ­CFY67-10, 10P 10.5 11.0 -
2)
Output power at 1 dB gain compression
P
1dB
VDS = 2 V, ID = 20 mA, f = 12 GHz CFY67-06, -08, -10 - 11.0 ­CFY67-08P, -10P 10.0 11.0 -
dB
dBm
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching , no fine-tuning).
2) Output power characteristics given for opt imum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group 4 of 10 Draft D, September 99
Typical Common Source S-Parameters
CFY67
CFY67-08: V
f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12MAG
[GHz] [magn] [angle] [magn] [angle] [m agn] [angle] [magn] [angle] [magn] [dB] [dB]
0,5 0,963 -15 5,315 165 0,0111 74 0,655 -14 0,40 26,8 1,0 0,938 -23 5,182 159 0,0225 68 0,639 -18 0,39 23,6 1,5 0,913 -33 5,060 150 0,0317 62 0,625 -23 0,42 22,0 2,0 0,889 -42 4,940 142 0,0411 57 0,611 -28 0,43 20,8 2,5 0,865 -52 4,824 133 0,0509 53 0,596 -35 0,43 19,8 3,0 0,844 -62 4,715 124 0,0585 46 0,582 -41 0,45 19,1 3,5 0,823 -72 4,591 115 0,0650 41 0,567 -47 0,47 18,5 4,0 0,800 -81 4,450 107 0,0714 36 0,552 -53 0,50 17,9 4,5 0,779 -91 4,319 99 0,0768 31 0,534 -60 0,52 17,5 5,0 0,761 -100 4,183 91 0,0811 25 0,520 -66 0,54 17,1 5,5 0,743 -109 4,043 83 0,0850 20 0,500 -72 0,58 16,8 6,0 0,725 -117 3,906 75 0,0885 15 0,490 -77 0,60 16,4 6,5 0,708 -125 3,769 68 0,0917 11 0,477 -83 0,63 16,1 7,0 0,690 -132 3,640 61 0,0942 7 0,467 -88 0,67 15,9 7,5 0,673 -139 3,529 54 0,0962 3 0,455 -93 0,71 15,6 8,0 0,656 -146 3,427 48 0,0978 -1 0,442 -97 0,76 15,4 8,5 0,640 -153 3,344 41 0,0998 -5 0,430 -101 0,79 15,3 9,0 0,625 -160 3,271 34 0,1010 -9 0,417 -104 0,84 15,1
9,5 0,611 -168 3,202 28 0,1027 -12 0,406 -108 0,87 14,9 10,0 0,597 -175 3,143 21 0,1033 -16 0,393 -113 0,91 14,8 10,5 0,586 177 3,089 15 0,1044 -20 0,381 -118 0,94 14,7 11,0 0,576 169 3,041 8 0,1056 -24 0,370 -123 0,96 14,6 11,5 0,564 161 3,002 1 0,1068 -28 0,358 -129 0,98 14,5 12,0 0,554 154 2,960 -5 0,1070 -32 0,351 -134 1,01 14,4 13,8 12,5 0,547 146 2,923 -12 0,1076 -36 0,343 -140 1,03 14,3 13,3 13,0 0,536 139 2,886 -19 0,1076 -41 0,336 -146 1,06 14,3 12,7 13,5 0,529 131 2,848 -26 0,1081 -45 0,330 -151 1,09 14,2 12,4 14,0 0,522 124 2,815 -33 0,1087 -50 0,325 -156 1,11 14,1 12,1 14,5 0,517 116 2,787 -40 0,1087 -55 0,320 -161 1,13 14,1 11,9 15,0 0,510 108 2,765 -46 0,1093 -60 0,315 -167 1,14 14,0 11,7 15,5 0,505 99 2,751 -54 0,1090 -65 0,311 -172 1,16 14,0 11,6 16,0 0,502 91 2,735 -61 0,1090 -71 0,305 -177 1,18 14,0 11,4 16,5 0,499 82 2,719 -68 0,1091 -77 0,301 177 1,19 14,0 11,3 17,0 0,498 74 2,722 -75 0,1097 -82 0,297 172 1,19 13,9 11,3 17,5 0,498 68 2,741 -80 0,1103 -87 0,294 168 1,18 14,0 11,4 18,0 0,498 62 2,760 -84 0,1107 -90 0,290 165 1,17 14,0 11,5
= 2 V, ID = 15 mA, Zo = 50
DS
Semiconductor Group 5 of 10 Draft D, September 99
Typical Common Source S-Parameters (continued)
CFY67
CFY67-06: V
f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12MAG
[GHz] [mag] [ang] [mag] [ang] [m ag] [ang] [mag] [ang] [mag] [dB] [dB]
0,5 0,962 -13 6,112 166 0,0111 76 0,539 -15 0,42 27,4
1,0 0,937 -22 5,956 159 0,0211 69 0,525 -19 0,42 24,5
1,5 0,913 -33 5,810 150 0,0302 64 0,511 -24 0,44 22,8
2,0 0,889 -41 5,690 142 0,0394 58 0,498 -30 0,46 21,6
2,5 0,860 -51 5,522 133 0,0484 53 0,484 -36 0,48 20,6
3,0 0,834 -61 5,386 124 0,0567 48 0,469 -43 0,50 19,8
3,5 0,810 -71 5,236 116 0,0637 43 0,456 -49 0,52 19,1
4,0 0,784 -80 5,067 107 0,0702 38 0,440 -55 0,55 18,6
4,5 0,761 -90 4,911 99 0,0760 33 0,423 -61 0,58 18,1
5,0 0,740 -99 4,752 91 0,0809 28 0,410 -67 0,60 17,7
5,5 0,720 -107 4,586 84 0,0851 24 0,397 -73 0,63 17,3
6,0 0,701 -116 4,420 76 0,0889 19 0,385 -79 0,66 17,0
6,5 0,682 -124 4,260 69 0,0918 15 0,373 -84 0,69 16,7
7,0 0,663 -131 4,107 62 0,0941 11 0,362 -89 0,73 16,4
7,5 0,644 -139 3,974 55 0,0962 7 0,351 -93 0,77 16,2
8,0 0,627 -148 3,852 49 0,0980 3 0,343 -98 0,80 15,9
8,5 0,611 -157 3,747 42 0,0995 -1 0,333 -102 0,83 15,8
9,0 0,595 -165 3,659 35 0,1008 -5 0,323 -107 0,86 15,6
9,5 0,581 -173 3,571 29 0,1022 -9 0,313 -112 0,90 15,4 10,0 0,567 178 3,497 22 0,1039 -13 0,303 -116 0,92 15,3 10,5 0,556 170 3,430 16 0,1049 -17 0,293 -121 0,95 15,1 11,0 0,546 163 3,368 9 0,1064 -21 0,284 -127 0,98 15,0 11,5 0,537 155 3,317 3 0,1078 -26 0,274 -131 1,00 14,9 12,0 0,528 149 3,265 -4 0,1093 -30 0,265 -135 1,02 14,8 13,8 12,5 0,520 142 3,216 -10 0,1105 -35 0,255 -139 1,05 14,6 13,3 13,0 0,513 135 3,169 -17 0,1116 -39 0,246 -143 1,07 14,5 12,9 13,5 0,506 128 3,120 -24 0,1126 -44 0,235 -146 1,10 14,4 12,5 14,0 0,498 121 3,080 -30 0,1137 -49 0,225 -150 1,12 14,3 12,2 14,5 0,492 113 3,044 -37 0,1151 -54 0,215 -155 1,14 14,2 12,0 15,0 0,489 106 3,014 -44 0,1160 -59 0,207 -159 1,15 14,1 11,8 15,5 0,484 98 2,990 -51 0,1171 -65 0,200 -163 1,16 14,1 11,6 16,0 0,485 91 2,967 -58 0,1185 -71 0,193 -167 1,17 14,0 11,5 16,5 0,485 83 2,945 -65 0,1197 -77 0,187 -171 1,17 13,9 11,4 17,0 0,485 75 2,947 -71 0,1206 -82 0,182 -175 1,17 13,9 11,4 17,5 0,487 69 2,961 -77 0,1215 -87 0,177 -178 1,16 13,9 11,5 18,0 0,490 64 2,979 -81 0,1230 -90 0,174 179 1,14 13,8 11,6
= 2 V, ID = 15 mA, Zo = 50
DS
Semiconductor Group 6 of 10 Draft D, September 99
Typical Common Source Noise-Parameters
CFY67
CFY67-08: V
fNF
= 2 V, ID = 15 mA, Zo = 50
DS
|Γ
min
|<Γ
opt
opt
[GHz] [dB] [m agn] [angle]
1 0,29 0,756 14 15,60 2 0,30 0,690 28 14,65 3 0,34 0,643 43 13,56 4 0,38 0,606 58 12,10 5 0,41 0,578 73 10,53 6 0,46 0,553 87 8,86 7 0,50 0,534 102 7,16 8 0,55 0,518 116 5,62
9 0,60 0,505 131 4,29 10 0,64 0,495 145 3,23 11 0,69 0,486 159 2,53 12 0,73 0,476 173 2,22 13 0,78 0,467 -173 2,37 14 0,84 0,455 -160 2,96 15 0,88 0,443 -146 4,01 16 0,93 0,428 -132 5,47 17 0,99 0,412 -118 7,26 18 1,05 0,394 -103 9,61
R
[]
n
Semiconductor Group 7 of 10 Draft D, September 99
CFY67
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device f amily and quality level only.
Ordering Form:
Ordering Code: Q..........
CFY67 -(nnl) (ql)
-(nnl) Noise Figure/Gain and/or Power Level (ql): Qualit y Level
Ordering Example:
Ordering Code: Q62702F1698 CFY67-08P ES
For CFY67, Noise Figure/Gain/Power Level 08P:
NF < 0.8 dB, G
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
> 11.0 dB, P
a
> 10 dBm @ 12 GHz
1dB
Tel.: ++89 234 24480 Fax.: ++89 234 28438 e-mail: martin.wimmers@infineon.com Address: Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich
Semiconductor Group 8 of 10 Draft D, September 99
CFY67
Micro-X Package
Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies.
The information describes the type of component and shall not be considered as assured c haracteristics.
Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please
contact the Offic es of Sem ic onduc tor Group in Germ any or the Infineon Technologies Companies and Representatives woldwide (see address list).
Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, S emiconductor Group.
Infineon Technologies Semiconductors is a cert i f i ed CECC and QS9000 manufacturer (this i ncludes ISO 9000).
Semiconductor Group 9 of 10 Draft D, September 99
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