INFINEON CFY67 DATA SHEET

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HiRel K-Band GaAs Super Low Noise HEM T

HiRel Discrete and Microwave Semiconductor

•

• Pseudo-morphic AlGaAs/InGaAs/G aAs HEMT

• For professional super low-noise amplifiers

• For frequencies from 500 MHz to > 20 GHz

CFY67

34

• Hermetically sealed microwave package

12

• Super low noise figure, high associated g ain

• Space Qualified

ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen ( t bc.)

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type Marking Ordering Code Pin Configuration Package

1234

CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)

- see below G S D S Micro-X

CFY67-10 (ql)
CFY67-10P (ql)

CFY67-nnl: specifies gain and output power levels (see electrical characteristics)

(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1699

H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1699

(see order instructions for or der ing example)

Semiconductor Group 1 of 10 Draft D, September 99

CFY67

Maximum Ratings

Parameter Symbol Values Unit

Drain-source voltage V
Drain-gate voltage V
Gate-source voltage (reverse / forward) V
Drain current I
Gate forward current I
RF Input Power, C- and X-Band

1)

Junction temperature T
Storage temperature r ange T
Total power dissipation
Soldering temperature

2)

3)

Thermal Resistance

Junction-soldering point R

P

P
T

DS

DG

GS

D

G

RF,in

J

stg

tot

sol

th JS

3.5 V

4.5 V

- 3... + 0.5 V
60 mA
2mA
+ 10 dBm
150

- 65... + 150

°C
°C

200 mW
230 °C

≤ 515 (tbc.)

K/W

Notes.:

1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.

2) At T

= + 47 °C. For TS > + 47 °C derating is required.

S

3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.

Semiconductor Group 2 of 10 Draft D, September 99

CFY67

Electrical Characteristics (at T

=25°C; unless otherwise specified)

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Drain-source saturation current

= 2 V, VGS = 0 V

V

DS

Gate threshold voltage

= 2 V, ID = 1 mA

V

DS

Drain current at pinch-off

= 1.5 V, VGS = - 3 V

V

DS

Gate leakage current at pinch- off

= 1.5 V, VGS = - 3 V

V

DS

Transconductance

= 2 V, ID = 15 mA

V

DS

I

Dss

-V

I

Dp

-I

g

Gth

Gp

m15

15 30 60 mA

0.2 0.7 2.0 V

-< 50-µA

- < 50 200 µA

50 65 - mS

Gate leakage current at oper ation

= 2 V, ID = 15 mA

V

DS

Thermal resistance
junction to soldering point

-I

R

G15

th JS

-< 0.52µA

- 450 - K/W

Semiconductor Group 3 of 10 Draft D, September 99