INFINEON BSS159N User Manual

BSS159N

)

SIPMOS® Small-Signal-Transistor

Features

• N-channel

• Depletion mode

Product Summary

V

DS

R

DS(on),max

I

DSS,min

60 V

0.13 A

• dv /dt rated

• Available with V

• Pb-free lead-plating; RoHS compliant

indicator on reel

GS(th)

SOT-23

Type Package Pb-free Tape and Reel Information Marking

BSS159 PG-SOT-23 Yes L6327: 3000 pcs/reel SGs

8

Ω

BSS159 PG-SOT-23 Yes

Maximum ratings, at T

=25 °C, unless otherwise specified

j

L6906: 3000 pcs/reel sorted in V

GS(th

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

I

D

I

D,pulse

Reverse diode dv /dt dv /dt

Gate source voltage

V

GS

TA=25 °C

T

=70 °C

A

TA=25 °C

=0.23 A, VDS=60 V,

I

D

di /dt =200 A/µs,

T

=150 °C

j,max

ESD sensitivity (HBM) as per
MIL-STD 883

Power dissipation

Operating and storage temperature

P

tot

, T

T

j

TA=25 °C

stg

1)

bands

SGs

Value

0.23 A

0.18

0.92

6 kV/µs

±20 V

Class 0

0.36 W

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

1)

see table on next page and diagram 11

Rev. 1.32 page 1 2006-12-11

BSS159N

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal characteristics

Electrical characteristics, at T

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 350 K/W

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source cutoff current

V

(BR)DSSVGS

V

GS(th)

I

D(off)

=-10 V, ID=250 µA

VDS=3 V, ID=26 µA

VDS=60 V,
V

=-10 V, Tj=25 °C

GS

V

=60 V,

DS

V

=-10 V, Tj=125 °C

GS

60 - - V

-3.5 -2.8 -2.4

- - 0.1 µA

--10

Gate-source leakage current

On-state drain current

Drain-source on-state resistance

Transconductance

Threshold voltage V

sorted in bands

GS(th)

J

I

GSS

I

DSS

R

DS(on)VGS

g

fs

V

GS(th)

VGS=20 V, VDS=0 V

VGS=0 V, VDS=10 V

=0 V, ID=0.07 A

=10 V, ID=0.16 A

V

GS

|VDS|>2|ID|R

I

=0.16 A

D

2)

VDS=3 V, ID=26 µA

DS(on)max

- - 10 nA

130 - - mA

- 3.9 8

- 1.7 3.5

,

0.1 0.19 - S

-2.6 - -2.4 V

K -2.75 - -2.55

L -2.9 - -2.7

M -3.05 - -2.85

N -3.2 - -3

2)

Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific

band cannot be ordered separately.

Ω

Rev. 1.32 page 2 2006-12-11

BSS159N

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Dynamic characteristics

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

=-10 V, VDS=25 V,

V

GS

f =1 MHz

VDD=25 V,
V

=-3…7 V,

GS

=0.16 A, RG=6 Ω

I

D

-3344pF

- 8.3 11

- 3.9 5.9

- 3.1 4.7 ns

- 2.9 4.4

-913

-913

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=40 V, ID=0.16 A,

DD

V

=-3 to 5 V

GS

- 0.14 0.21 nC

- 0.7 1.1

- 2.2 2.9

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

- -0.14 - V

- - 0.20 A

=25 °C

T

A

- - 0.81

VGS=-3 V, IF=0.16 A,
T

=25 °C

j

V

=30 V, IF=0.16 A,

R

di

/dt =100 A/µs

rr

F

- 0.79 1.2 V

- 10.4 13 ns

- 3.3 4.1 nC

Rev. 1.32 page 3 2006-12-11