INFINEON BSS139 User Manual

BSS139

SIPMOS® Small-Signal-Transistor

Features

• N-channel

• Depletion mode

Product Summary

V

DS

R

DS(on),max

I

DSS,min

• dv /dt rated

• Available with V

indicator on reel

GS(th)

• Pb-free lead-plating; RoHS compliant

PG-SOT-23

Type Package Ordering Code Tape and Reel Information Marking

0)

BSS139

BSS139

PG-SOT-23 Q62702-S612 E6327: 3000 pcs/reel STs

0)

PG-SOT-23 Q67042-S4296 E6906: 3000 pcs/reel

sorted in V

GS(th)

bands

1)

STs

250 V

30

0.03 A

Ω

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Reverse diode dv /dt dv /dt

Gate source voltage

ESD sensitivity (HBM) as per MIL-STD 883

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

I

D,pulse

TA=25 °C

T

=70 °C

A

TA=25 °C

=0.1 A,VDS=200 V,

I

D

di /dt =200 A/µs,

T

=150 °C

j,max

V

GS

P

tot

T

, T

j

TA=25 °C

stg

Value

0.10 A

0.08

0.4

6 kV/µs

±20 V

Class 1

0.36 W

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

0)

also available as non Pb-free on request

1)

see table on next page and diagram 11

Rev. 1.5 page 1 2006-04-27

BSS139

2)

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - ambient

Electrical characteristics, at T

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 350 K/W

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source cutoff current

V

(BR)DSSVGS

V

GS(th)

I

D(off)

=-3 V, ID=250 µA

VDS=3 V, ID=56 µA

VDS=250 V, V

=-3 V, Tj=25 °C

GS

250 - - V

-2.1 -1.4 -1

- - 0.1 µA

V

=250 V,

Gate-source leakage current

On-state drain current

Drain-source on-state resistance

Transconductance

Threshold voltage V

sorted in bands

GS(th)

J

I

I

R

g

V

GSS

DSS

DS(on)

fs

GS(th)

DS

V

=-3 V, Tj=125 °C

GS

VGS=20 V, VDS=0 V

VGS=0 V, VDS=10 V

VGS=0 V, ID=15 mA

V

=10 V,ID=0.1 mA

GS

|VDS|>2|ID|R

I

=0.08 A

D

2)

VDS=3 V, ID=56 µA

DS(on)max

,

--10

- - 10 nA

30 - - mA

- 12.5 30

- 7.8 14

0.060 0.13 - S

-1.2 - -1 V

K -1.35 - -1.15

L -1.5 - -1.3

M -1.65 - -1.45

N -1.8 - -1.6

Ω

Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific

band cannot be ordered separately.

Rev. 1.5 page 2 2006-04-27

BSS139

y

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

V

=-3 V, VDS=25 V,

GS

f =1 MHz

V

=125 V,

DD

V

=-3...5 V,

GS

I

=0.04 A, R

D

=6 Ω

G

-6076pF

- 6.7 8.4

- 2.6 3.3

- 5.8 8.7 ns

- 5.4 8.1

-2943

- 182 273

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

=200 V,

V

Q

gd

Q

g

DD

I

=0.04 A,

D

V

=-3 to 5 V

GS

- 0.14 0.21 nC

- 1.3 2.0

- 2.3 3.5

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

rr

=25 °C

T

A

VGS=-3 V, IF=0.1 A, T

=25 °C

j

=50 V, IF=0.04 A,

V

R

di

/dt =100 A/µs

F

- -0.28 - V

- - 0.10 A

- - 0.4

- 0.81 1.2 V

- 8.6 12.9 ns

- 2.1 3.1 nC

Rev. 1.5 page 3 2006-04-27

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