INFINEON BSP373N Datasheet

BSP373N

OptiMOS™ Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

TA=25 °C

1.8 A

TA=70 °C

1.5

Pulsed drain current

I

D,pulse

TA=25 °C

7.3

Avalanche energy, single pulse

E

AS

ID=1.8 A, RGS=25 W

33 mJ

Reverse diode dv/dt dv/dt

ID=1.8 A, VDS=80 V,
di/dt=200 A/µs,

T

j,max

=150 °C

6 kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

1)

P

tot

TA=25 °C

W

Operating and storage temperature

Tj, T

stg

-55 ... 150 °C

ESD Class

JESD22-A114 -HBM 0 (<250V)

Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56

Value

1.8

PG-SOT223

Type

Package

Tape and Reel Information

Marking

Halogen-Free

Packing

BSP373N

SOT223

H6327: 1000 pcs/ reel

BSP373N

Yes

Non dry

V

DS

100 V R

DS(on),max

0.24

W

ID 1.8

A

Product Summary

Rev 2.0 page 1 2013-04-04

BSP373N

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance
junction - soldering point

R

thJS

- - 25 K/W

Thermal resistance

R

thJA

minimal footprint - - 110

junction - ambient

6 cm2 cooling area

1)

- - 70

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSSVGS

=0 V, ID=250 µA

100 - - V

Gate threshold voltage

V

GS(th)

VDS=Vgs V, ID=218 µA

2.1 3.0 4.0

Drain-source leakage current

I

DSS

VDS=100 V, VGS=0 V,
Tj=25 °C

- - 0.1

mA

VDS=100 V, VGS=0 V,
Tj=150 °C

- - 10

Gate-source leakage current

I

GSS

VGS=20 V, VDS=0 V

- - 10 nA

Drain-source on-state resistance

R

DS(on)

VGS=10 V, ID=1.8 A

- 177 240

mW

Transconductance

g

fs

|VDS|>2|ID|R

DS(on)max

,

ID=1.5 A

3.23 - S

Values

1)

Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev 2.0 page 2 2013-04-04

BSP373N

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 199 265 pF

Output capacitance

C

oss

- 36 48

Reverse transfer capacitance

C

rss

- 14 21

Turn-on delay time

t

d(on)

- 4.6 6.9 ns

Rise time

t

r

- 5.9 8.91

Turn-off delay time

t

d(off)

- 21.9 32.9

Fall time

t

f

- 13.5 20.3

Gate Charge Characteristics
Gate to source charge

Q

gs

- 0.8 1.2 nC

Gate to drain charge

Q

gd

- 2.7 4.0

Gate charge total

Q

g

- 6.2 9.3

Gate plateau voltage

V

plateau

- 4.1 - V

Reverse Diode

Diode continous forward current

I

S

- - 1.8 A

Diode pulse current

I

S,pulse

- - 7.3

Diode forward voltage

V

SD

VGS=0 V, IF=1.8 A,
Tj=25 °C

- 0.82 1.1 V

Reverse recovery time

t

rr

- 33 49.5 ns

Reverse recovery charge

Q

rr

- 46 69 nC

VR=50 V, IF=1.8 A,
diF/dt=100 A/µs

TA=25 °C

Values

VGS=0 V, VDS=25 V,
f=1 MHz

VDD=50 V, VGS=10 V,
ID=1.8 A, RG=6 W

VDD=50 V, ID=1.8 A,
VGS=0 to 10 V

Rev 2.0 page 3 2013-04-04