Infineon BSM150GB170DN2E3256 Data Sheet

1 Oct-27-1997

BSM 150 GB 170 DN2

IGBT Power Module

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

• R

G on,min

= 10 Ohm

Type

V

CE

I

C

Package Ordering Code

BSM 150 GB 170 DN2 1700V 220A HALF-BRIDGE 2 C67070-A2704-A67

Maximum Ratings
Parameter

Symbol Values Unit

Collector-emitter voltage V

CE

1700 V

Collector-gate voltage

R

GE

= 20 kΩ

V

CGR

1700

Gate-emitter voltage V

GE

± 20

DC collector current

T

C

= 25 °C

T

C

= 80 °C

I

C

150

220

A

Pulsed collector current, tp = 1 ms

T

C

= 25 °C

T

C

= 80 °C

I

Cpuls

300

440

Power dissipation per IGBT

T

C

= 25 °C

P

tot

1250

W

Chip temperature T

j

+ 150 °C

Storage temperature T

stg

-40 ... + 125

Thermal resistance, chip case R

thJC

≤

0.1 K/W

Diode thermal resistance, chip case R

thJC

D

≤

0.32

Insulation test voltage, t = 1min. V

is

4000 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

2 Oct-27-1997

BSM 150 GB 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Gate threshold voltage

V

GE

= V

CE, IC

= 10 mA

V

GE(th)

4.8 5.5 6.2

V

Collector-emitter saturation voltage

V

GE

= 15 V, IC = 150 A, Tj = 25 °C

V

GE

= 15 V, IC = 150 A, Tj = 125 °C

V

CE(sat)

-

-

4.6

3.4

5.3

3.9

Zero gate voltage collector current

V

CE

= 1700 V, VGE = 0 V, Tj = 25 °C

V

CE

= 1700 V, VGE = 0 V, Tj = 125 °C

I

CES

-

­ 4

1

-

1.5

mA

Gate-emitter leakage current

V

GE

= 20 V, VCE = 0 V

I

GES

- - 100

nA

AC Characteristics

Transconductance

V

CE

= 20 V, IC = 150 A

g

fs

54 - -

S

Input capacitance

V

CE

= 25 V, VGE = 0 V, f = 1 MHz

C

iss

- 20 -

nF

Output capacitance

V

CE

= 25 V, VGE = 0 V, f = 1 MHz

C

oss

- 2 -

Reverse transfer capacitance

V

CE

= 25 V, VGE = 0 V, f = 1 MHz

C

rss

- 0.55 -