Infineon BSM150GB120DN2FE3256 Data Sheet

BSM 150 GB 120 DN2

IGBT Power Module

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

V

CE

I

C

Package Ordering Code

BSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70

Maximum Ratings
Parameter

Collector-emitter voltage V
Collector-gate voltage

R

= 20 kΩ

GE

Gate-emitter voltage V
DC collector current

T

= 25 °C

C

T

= 80 °C

C

Pulsed collector current, tp = 1 ms

T

= 25 °C

C

T

= 80 °C

C

Power dissipation per IGBT

T

= 25 °C

C

Chip temperature T

Symbol Values Unit

1200 V

V

CE
CGR

1200

GE

I

C

± 20

A
210
150

I

Cpuls

420
300

P

tot

W

1250

j

+ 150 °C

Storage temperature T
Thermal resistance, chip case R

Diode thermal resistance, chip case R
Insulation test voltage, t = 1min. V

stg

thJC
thJC

is

D

-40 ... + 125

≤

0.1 K/W

≤

0.25

2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

1 Oct-21-1997

BSM 150 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter

Static Characteristics

Gate threshold voltage

V

GE

= V

CE, IC

= 6 mA

Collector-emitter saturation voltage

V

= 15 V, IC = 150 A, Tj = 25 °C

GE

V

= 15 V, IC = 150 A, Tj = 125 °C

GE

Zero gate voltage collector current

V

= 1200 V, VGE = 0 V, Tj = 25 °C

CE

V

= 1200 V, VGE = 0 V, Tj = 125 °C

CE

Gate-emitter leakage current

V

= 20 V, VCE = 0 V

GE

AC Characteristics

Symbol Values Unit

min. typ. max.

V

GE(th)

V

4.5 5.5 6.5

V

CE(sat)

I

CES

I

GES

-

-

-

-

2.5

3.1

2
8

3

3.7
mA

2.8

­nA

- - 320

Transconductance

V

= 20 V, IC = 150 A

CE

Input capacitance

V

= 25 V, VGE = 0 V, f = 1 MHz

CE

Output capacitance

V

= 25 V, VGE = 0 V, f = 1 MHz

CE

Reverse transfer capacitance

V

= 25 V, VGE = 0 V, f = 1 MHz

CE

g

C

C

C

fs

iss

oss

rss

S

62 - -

nF

- 11 -

- 1.6 -

- 0.6 -

2 Oct-21-1997