Infineon BSM100GP60 Data Sheet
Technische Information / Technical Information
Periodischer Spitzenstrom
Periodischer Spitzenstrom
IGBT-Module
IGBT-Modules
BSM100GP60
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
TC = 80°C I
tP = 10 ms, T
tP = 10 ms, T
tP = 10 ms, T
tP = 10 ms, T
= 25°C I
vj
= 150°C
vj
= 25°C
vj
= 150°C
vj
Tc = 70 °C
TC = 25 °C I
tP = 1 ms, TC =
TC = 25°C P
70 °C
V
RRM
I
FRMSM
FSM
I2t
V
CES
I
C,nom.
I
CRM
V
GES
1600 V
80 A
d
100 A
700 A
570 A
2450
1620
A2s
A2s
600 V
100 A
C
135 A
200 A
tot
420 W
+/- 20V V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
repetitive peak forw. current
Grenzlastintegral
I2t - value
Tc = 70 °C
tP = 1 ms I
VR = 0V, tp = 10ms, Tvj = 125°C
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
TC = 80 °C I
TC = 25 °C I
tP = 1 ms, TC = 80°C I
TC = 25°C P
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
repetitive peak forw. current
Tc = 70 °C
tP = 1 ms I
I
FRM
I2t
V
CES
C,nom.
CRM
V
GES
I
FRM
F
100 A
200 A
2.300
A2s
600 V
50 A
C
75 A
100 A
tot
250 W
+/- 20V V
F
30 A
60 A
prepared by: Andreas Schulz date of publication:29.03.2001
approved by: Robert Severin revision: 5
1(11)
DB-PIM-10.xls
Technische Information / Technical Information
=
Gate-Emitter Reststrom
IGBT-Module
IGBT-Modules
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
BSM100GP60
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Tvj = 150°C, IF =
Tvj = 150°C V
Tvj = 150°C r
Tvj = 150°C, V
TC = 25°C R
VGE = 15V, Tvj = 25°C, IC =
VGE = 15V, Tvj = 125°C, IC =
VCE = VGE, Tvj = 25°C, IC =
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE =
VGE = 0V, Tvj =125°C, VCE =
V
ISOL
2,5 kV
min. typ. max.
V
F
(TO)
T
I
R
AA'+CC'
- 1,16 - V
- - 0,8 V
- - 4,8
- 4 - mA
- 4 -
R
100 A
1600 V
min. typ. max.
100 A
100 A - 2,2 - V
1,5 mA
600 V
600 V - 4,0 - mA
V
V
CE sat
GE(TO)
C
ies
I
CES
- 1,95 2,45 V
4,5 5,5 6,5 V
- 4,3 - nF
- 3,0 500 µA
mΩ
mΩ
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
VCE = 0V, VGE =20V, Tvj =25°C I
IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = I
, VCC =
Nenn
VGE = ±15V, Tvj = 125°C, RG =
LS =
tP ≤ 10µs, VGE ≤ 15V, RG =
Tvj≤125°C, V
300 V
15 Ohm
15 Ohm - 45 - ns
300 V
15 Ohm
15 Ohm - 65 - ns
300 V
15 Ohm
15 Ohm - 285 - ns
300 V
15 Ohm
15 Ohm - 45 - ns
300 V
15 Ohm
50 nH
300 V
15 Ohm
50 nH
15 Ohm
=
360 V
CC
dI/dt = 4000 A/µs
t
t
GES
d,off
E
E
I
d,on
t
SC
- - 300 nA
- 50 - ns
r
- 65 - ns
- 260 - ns
t
on
off
- 35 - ns
f
- 4,2 - mWs
- 3,2 - mWs
- 400 - A
2(11)
DB-PIM-10.xls
Technische Information / Technical Information
Gate-Emitter Reststrom
IGBT-Module
IGBT-Modules
BSM100GP60
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
TC = 25°C R
VGE = 0V, Tvj = 25°C, IF =
VGE = 0V, Tvj = 125°C, IF =
IF=I
, - diF/dt =
Nenn
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=I
, - diF/dt =
Nenn
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
IF=I
, - diF/dt =
Nenn
VGE = -10V, Tvj = 25°C, VR =
VGE = -10V, Tvj = 125°C, VR =
VGE = 15V, Tvj = 25°C, IC =
VGE = 15V, Tvj = 125°C, IC =
VCE = VGE, Tvj = 25°C, IC =
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj = 25°C, VCE =
VGE = 0V, Tvj = 125°C, VCE =
min. typ. max.
L
σCE
CC'+EE'
- - 100 nH
- 7 -
mΩ
min. typ. max.
100 A
100 A - 1,2 - V
2200A/µs
300 V
300 V - 90 - A
2200A/µs
300 V
300 V - 10,5 - µAs
2200A/µs
300 V
300 V - 2,2 - mWs
V
I
RM
Q
E
RQ
- 1,25 1,7 V
F
- 68 - A
- 6,2 - µAs
r
- 1,3 - mWs
min. typ. max.
50,0 A
50,0 A - 2,2 - V
1 mA
600 V
600 V - 2,0 - mA
V
V
CE sat
GE(TO)
C
ies
I
CES
- 1,95 2,55 V
4,5 5,5 6,5 V
- 2,8 - nF
- 1,5 500 µA
gate-emitter leakage current
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaßspannung
forward voltage
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
100
100
Verlustleistung
power dissipation
B-Wert
B-value
VCE = 0V, VGE = 20V, Tvj = 25°C I
Tvj = 25°C, IF =
Tvj = 125°C, IF =
50,0 A
50,0 A - 1,4 - V
TC = 25°C R
TC = 100°C, R
= 493 Ω
100
∆R/R
TC = 25°C P
R2 = R1 exp [B(1/T2 - 1/T1)] B
GES
- - 300 nA
min. typ. max.
V
- 1,45 1,8 V
F
min. typ. max.
25
25
25/50
- 5 -
-5 5 %
kΩ
20 mW
3375 K
3(11)
DB-PIM-10.xls
Technische Information / Technical Information
Höchstzulässige Sperrschichttemperatur
Lagertemperatur
Innere Isolation
IGBT-Module
IGBT-Modules
BSM100GP60
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode
thermal resistance, case to heatsink
maximum junction temperature
Betriebstemperatur
operation temperature
storage temperature
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter - - 0,3 K/W
Diode Wechsr./ Diode Inverter - - 0,5 K/W
Trans. Bremse/ Trans. Brake - - 0,5 K/W
Diode Bremse/ Diode Brake - - 1,2 K/W
λ
Paste
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter - 0,04 - K/W
λ
grease
Mechanische Eigenschaften / Mechanical properties
=1W/m*K
=1W/m*K
min. typ. max.
R
thJC
R
thCK
T
T
op
T
stg
- - 0,5 K/W
- 0,04 - K/W
- 0,02 - K/W
- - 150 °C
vj
-40 - 125 °C
-40 - 125 °C
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
Al2O
225
M 3 Nm
±10%
G 300 g
3
4(11)
DB-PIM-10.xls
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