Infineon BSM100GB170DN2 Data Sheet
BSM 100 GB 170 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
G on,min
Type
= 15 Ohm
V
CE
I
C
Package Ordering Code
BSM 100 GB 170 DN2 1700V 145A HALF-BRIDGE 2 C67070-A2703-A67
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-gate voltage
R
= 20 kΩ
GE
Gate-emitter voltage V
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, tp = 1 ms
T
= 25 °C
C
Symbol Values Unit
1700 V
V
CE
CGR
1700
GE
I
C
± 20
A
145
100
I
Cpuls
290
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
P
Chip temperature T
Storage temperature T
Thermal resistance, chip case R
Diode thermal resistance, chip case R
Insulation test voltage, t = 1min. V
tot
j
stg
thJC
thJC
is
D
200
1000
+ 150 °C
-40 ... + 125
≤
0.13 K/W
≤
0.4
4000 Vac
W
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
1 Oct-27-1997
BSM 100 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Static Characteristics
Gate threshold voltage
V
GE
= V
CE, IC
= 8 mA
Collector-emitter saturation voltage
V
= 15 V, IC = 100 A, Tj = 25 °C
GE
V
= 15 V, IC = 100 A, Tj = 125 °C
GE
Zero gate voltage collector current
V
= 1700 V, VGE = 0 V, Tj = 25 °C
CE
V
= 1700 V, VGE = 0 V, Tj = 125 °C
CE
Gate-emitter leakage current
V
= 20 V, VCE = 0 V
GE
AC Characteristics
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.8 5.5 6.2
V
CE(sat)
I
CES
I
GES
-
-
-
-
3.4
4.5
0.8
3.2
3.9
5.3
mA
1
nA
- - 320
Transconductance
V
= 20 V, IC = 100 A
CE
Input capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
Output capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
Reverse transfer capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
g
C
C
C
fs
iss
oss
rss
S
36 - -
nF
- 16 -
- 1.3 -
- 0.5 -
2 Oct-27-1997
BSM 100 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
V
= 1200 V, VGE = 15 V, IC = 100 A
CC
R
Gon
= 15
Ω
Rise time
V
= 1200 V, VGE = 15 V, IC = 100 A
CC
R
Gon
= 15
Ω
Turn-off delay time
V
= 1200 V, VGE = -15 V, IC = 100 A
CC
R
Goff
= 15
Ω
Fall time
V
= 1200 V, VGE = -15 V, IC = 100 A
CC
R
Goff
= 15
Ω
t
d(on)
t
r
t
d(off)
t
f
- 450 900
- 200 400
- 850 1200
- 110 160
ns
Free-Wheel Diode
Diode forward voltage
I
= 100 A, VGE = 0 V, Tj = 25 °C
F
I
= 100 A, VGE = 0 V, Tj = 125 °C
F
Reverse recovery time
I
= 100 A, VR = -1200 V, VGE = 0 V
F
di
/dt = -1000 A/µs, Tj = 125 °C
F
Reverse recovery charge
I
= 100 A, VR = -1200 V, VGE = 0 V
F
di
/dt = -1000 A/µs
F
T
= 25 °C
j
T
= 125 °C
j
V
t
Q
F
-
-
rr
2.3
2.1
2.8
-
V
µs
- 0.5 -
rr
-
-
8
25
-
-
µC
3 Oct-27-1997
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