Infineon BSM100GB120DN2K Data Sheet
BSM 100 GB 120 DN2K
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
V
CE
I
C
Package Ordering Code
BSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-gate voltage
R
= 20 kΩ
GE
Gate-emitter voltage V
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, tp = 1 ms
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature T
Symbol Values Unit
1200 V
V
CE
CGR
1200
GE
I
C
± 20
A
145
100
I
Cpuls
290
200
P
tot
W
700
j
+ 150 °C
Storage temperature T
Thermal resistance, chip case R
Diode thermal resistance, chip case R
Insulation test voltage, t = 1min. V
stg
thJC
thJC
is
D
-40 ... + 125
≤
0.18 K/W
≤
0.36
2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
1 Oct-21-1997
BSM 100 GB 120 DN2K
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Static Characteristics
Gate threshold voltage
V
GE
= V
CE, IC
= 4 mA
Collector-emitter saturation voltage
V
= 15 V, IC = 100 A, Tj = 25 °C
GE
V
= 15 V, IC = 100 A, Tj = 125 °C
GE
Zero gate voltage collector current
V
= 1200 V, VGE = 0 V, Tj = 25 °C
CE
V
= 1200 V, VGE = 0 V, Tj = 125 °C
CE
Gate-emitter leakage current
V
= 20 V, VCE = 0 V
GE
AC Characteristics
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
I
GES
-
-
-
-
2.5
3.1
1.5
6
3
3.7
mA
2
nA
- - 400
Transconductance
V
= 20 V, IC = 100 A
CE
Input capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
Output capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
Reverse transfer capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
g
C
C
C
fs
iss
oss
rss
S
54 - -
nF
- 6.5 -
- 1 -
- 0.5 -
2 Oct-21-1997
BSM 100 GB 120 DN2K
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
V
= 600 V, VGE = 15 V, IC = 100 A
CC
R
Gon
= 6.8
Ω
Rise time
V
= 600 V, VGE = 15 V, IC = 100 A
CC
R
Gon
= 6.8
Ω
Turn-off delay time
V
= 600 V, VGE = -15 V, IC = 100 A
CC
R
Goff
= 6.8
Ω
Fall time
V
= 600 V, VGE = -15 V, IC = 100 A
CC
R
Goff
= 6.8
Ω
t
d(on)
t
r
t
d(off)
t
f
- 130 260
- 80 160
- 400 600
- 70 100
ns
Free-Wheel Diode
Diode forward voltage
I
= 100 A, VGE = 0 V, Tj = 25 °C
F
I
= 100 A, VGE = 0 V, Tj = 125 °C
F
Reverse recovery time
I
= 100 A, VR = -600 V, VGE = 0 V
F
di
/dt = -1000 A/µs, Tj = 125 °C
F
Reverse recovery charge
I
= 100 A, VR = -600 V, VGE = 0 V
F
di
/dt = -1000 A/µs
F
T
= 25 °C
j
T
= 125 °C
j
V
t
Q
F
-
-
rr
2.3
1.8
2.8
-
V
µs
- 0.3 -
rr
-
-
4
14
-
-
µC
3 Oct-21-1997
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