Infineon BSM100GB120DN2 Data Sheet

BSM 100 GB 120 DN2

IGBT Power Module

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

V

CE

I

C

Package Ordering Code

BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70

Maximum Ratings
Parameter

Collector-emitter voltage V
Collector-gate voltage

R

= 20 kΩ

GE

Gate-emitter voltage V
DC collector current

T

= 25 °C

C

T

= 80 °C

C

Pulsed collector current, tp = 1 ms

T

= 25 °C

C

T

= 80 °C

C

Power dissipation per IGBT

T

= 25 °C

C

Chip temperature T

Symbol Values Unit

1200 V

V

CE
CGR

1200

GE

I

C

± 20

A
150
100

I

Cpuls

300
200

P

tot

W
800

j

+ 150 °C

Storage temperature T
Thermal resistance, chip case R

Diode thermal resistance, chip case R
Insulation test voltage, t = 1min. V

stg

thJC
thJC

is

D

-40 ... + 125

≤

0.16 K/W

≤

0.3

2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

1 Oct-21-1997

BSM 100 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter

Static Characteristics

Gate threshold voltage

V

GE

= V

CE, IC

= 4 mA

Collector-emitter saturation voltage

V

= 15 V, IC = 100 A, Tj = 25 °C

GE

V

= 15 V, IC = 100 A, Tj = 125 °C

GE

Zero gate voltage collector current

V

= 1200 V, VGE = 0 V, Tj = 25 °C

CE

V

= 1200 V, VGE = 0 V, Tj = 125 °C

CE

Gate-emitter leakage current

V

= 20 V, VCE = 0 V

GE

AC Characteristics

Symbol Values Unit

min. typ. max.

V

GE(th)

V

4.5 5.5 6.5

V

CE(sat)

I

CES

I

GES

-

-

-

-

2.5

3.1

1.5
6

3

3.7
mA

2

­nA

- - 200

Transconductance

V

= 20 V, IC = 100 A

CE

Input capacitance

V

= 25 V, VGE = 0 V, f = 1 MHz

CE

Output capacitance

V

= 25 V, VGE = 0 V, f = 1 MHz

CE

Reverse transfer capacitance

V

= 25 V, VGE = 0 V, f = 1 MHz

CE

g

C

C

C

fs

iss

oss

rss

S

54 - -

nF

- 6.5 -

- 1 -

- 0.5 -

2 Oct-21-1997

BSM 100 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter

Symbol Values Unit

min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

V

= 600 V, VGE = 15 V, IC = 100 A

CC

R

Gon

= 6.8

Ω

Rise time

V

= 600 V, VGE = 15 V, IC = 100 A

CC

R

Gon

= 6.8

Ω

Turn-off delay time

V

= 600 V, VGE = -15 V, IC = 100 A

CC

R

Goff

= 6.8

Ω

Fall time

V

= 600 V, VGE = -15 V, IC = 100 A

CC

R

Goff

= 6.8

Ω

t

d(on)

t

r

t

d(off)

t

f

- 130 260

- 80 160

- 400 600

- 70 100

ns

Free-Wheel Diode

Diode forward voltage

I

= 100 A, VGE = 0 V, Tj = 25 °C

F

I

= 100 A, VGE = 0 V, Tj = 125 °C

F

Reverse recovery time

I

= 100 A, VR = -600 V, VGE = 0 V

F

di

/dt = -1000 A/µs, Tj = 25 °C

F

Reverse recovery charge

I

= 100 A, VR = -600 V, VGE = 0 V

F

di

/dt = -1000 A/µs

F

T

= 25 °C

j

T

= 125 °C

j

V

t

Q

F

-

-

rr

2.3

1.8

2.8

-

V

µs

- 0.3 -

rr

-

-

4
12

-

-

µC

3 Oct-21-1997

BSM 100 GB 120 DN2

Power dissipation

P

= ƒ(TC)

tot

parameter: T

900

W

P

700

tot

600

500

400

300

200

100

0

≤ 150 °C

j

0 20 40 60 80 100 120 °C 160

Safe operating area

IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , T

3

10

A

I

C

T

C

10

10

10

10

-1

2

1

0

10

0

10

1

10

j

2

≤ 150 °C

t

= 14.0µs

p

100 µs

1 ms

10 ms

DC

3

10

V

V

CE

Collector current

IC = ƒ(TC)

parameter: V

160

A

I

C

120

100

80

60

40

20

0

0 20 40 60 80 100 120 °C 160

GE

≥

15 V , T

150 °C

≤

j

Transient thermal impedance IGBT

Z

= ƒ(tp)

th JC

parameter: D = tp / T

0

10

K/W

Z

thJC

T

C

10

10

10

10

-1

-2

-3

-4

10

-5

single pulse

-4

10

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-3

10

-2

10

-1

10 0 s

t

p

4 Oct-21-1997