Infineon BSC750N10ND G Schematic [ru]
BSC750N10ND G
OptiMOS®2 Power-Transistor
Product Summary
Features
• Dual N-channel, normal level
• Excellent gate charge x R
• Low on-resistance R
DS(on)
product (FOM)
DS(on)
• Pb-free lead plating; RoHS compliant
1)
• Qualified according to JEDEC
for target application
• Ideal for high-frequency switching and synchronous rectification
• 100% avalanche tested
Type Package Marking
BSC750N10ND G PG-TDSON-8 750N10ND
Maximum ratings, at T
=25 °C, unless otherwise specified
j
V
R
I
DS
DS(on),max
D
100 V
75
13 A
PG-TDSON-8
mΩ
Parameter Symbol Conditions Unit
Value
≤10 secs steady state
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
I
D
I
D,pulse
E
AS
Reverse diode dv /dt dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
V
GS
P
tot
, T
T
j
IEC climatic category; DIN IEC 68-1
VGS=10 V, TC=25 °C
V
=10 V, TC=100 °C
GS
=10 V, TA=25 °C
V
GS
TC=25 °C
ID=13 A, RGS=25 Ω
=13 A, VDS=80 V,
I
D
di /dt =100 A/µs,
T
=150 °C
j,max
TC=25 °C
=25 °C
3)
stg
T
A
13
A
8.5
3)
5.0 3.2
52
17
6
±20
26
mJ
kV/µs
V
W
3.6 1.5
-55 ... 150
°C
55/150/56
1)
J-STD20 and JESD22
Rev. 1.0 page 1 2007-12-14
BSC750N10ND G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient, 6 cm² cooling area
Electrical characteristics, at T
3)
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
t≤10 s - - 35
steady state - - 85
- - 4.9 K/W
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSSVGS
V
GS(th)
I
DSS
=0 V, ID=1 mA
VDS=VGS, ID=12 µA
VDS=100 V, VGS=0 V,
T
=25 °C
j
V
=100 V, VGS=0 V,
DS
T
=125 °C
j
100 - - V
234
- 0.1 1 µA
- 10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
See figure 3
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. One transistor active.
I
R
R
g
GSS
DS(on)
G
fs
VGS=20 V, VDS=0 V
VGS=10 V, ID=13 A
|VDS|>2|ID|R
I
=13 A
D
DS(on)max
- 1 100 nA
-6275
- 0.8 -
,
6.5 13 - S
mΩ
Ω
Rev. 1.0 page 2 2007-12-14
BSC750N10ND G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
C
iss
=0 V, VDS=50 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
4)
Q
gs
Q
gd
Q
sw
Q
g
GS
f =1 MHz
V
=50 V, VGS=10 V,
DD
=13 A, RG=2.4 Ω
I
D
=50 V, ID=13 A,
V
DD
V
=0 to 10 V
GS
- 540 720 pF
- 76 100
-812
- 9 13 ns
-46
-1318
-34
-34nC
-23
-46
-811
Gate plateau voltage
Output charge
V
Q
plateau
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
4)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
t
rr
Q
rr
VDD=50 V, VGS=0 V
=25 °C
T
C
VGS=0 V, IF=13 A,
T
=25 °C
j
VR=50 V, IF=IS,
di
/dt =100 A/µs
F
-6-V
-810
- - 13 A
--52
- 1 1.2 V
-67 ns
- 114 - nC
Rev. 1.0 page 3 2007-12-14
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
BSC750N10ND G
30
25
15
12
20
9
[W]
15
tot
P
[A]
D
I
6
10
5
0
0 40 80 120 160
TC [°C]
3
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
2
p
limited by on-state
resistance
1 µs
=f(tp)
thJC
parameter: D =tp/T
10
0.5
10 µs
100 µs
1 ms
1
10
2
10
3
0.2
1
0.1
0.05
[K/W]
thJC
0.02
Z
0.01
0.1
single pulse
0000001
0.01
10
-6
10
10
10
-4
-5
-2
-3
10
10
0
-1
10
tp [s]
[A]
D
I
10
10
10
1
0
-1
-1
10
10
10 ms
DC
0
10
VDS [V]
Rev. 1.0 page 4 2007-12-14
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