Infineon BSC340N08NS3 G Schematic [ru]

BSC340N08NS3 G

OptiMOS

(TM)

3 Power-Transistor

Features

• Ideal for high frequency switching

• Optimized technology for DC/DC converters

• Excellent gate charge x R

product (FOM)

DS(on)

• Superior thermal resistance

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

1)

• Qualified according to JEDEC

Type

BSC340N08NS3 G

for target applications

Product Summary

V

DS

R

DS(on),max

I

D

80 V

34

23 A

mΩ

Package

Marking

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

1)

J-STD20 and JESD22

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

3)

See figure 3 for more detailed information

4)

See figure 13 for more detailed information

PG-TDSON-8

340N08NS

=25 °C, unless otherwise specified

j

I

D

3)

4)

I

D,pulse

E

AS

V

GS

VGS=10 V, TC=25 °C

V

=10 V, TC=100 °C

GS

V

=10 V, TA=25 °C,

R

GS

=50 K/W

thJA

2)

TC=25 °C

ID=12 A, RGS=25 Ω

Value

23 A

15

7

92

20 mJ

±20 V

Rev. 2.3 page 1 2008-07-03

Maximum ratings, at Tj=25 °C, unless otherwise specified

BSC340N08NS3 G

Parameter Symbol Conditions Unit

stg

TC=25 °C

=25 °C,

T

A

R

=50 K/W

thJA

2)

Power dissipation

Operating and storage temperature

P

tot

, T

T

j

Value

32 W

2.5

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Device on PCB

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

R

thJC

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

2)

- - 3.9 K/W

--50

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

g

fs

=0 V, ID=1 mA

VDS=VGS, ID=12 µA

VDS=80 V, VGS=0 V,
T

=25 °C

j

V

=80 V, VGS=0 V,

DS

T

=125 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=12 A

=6 V, ID=6 A

V

GS

|VDS|>2|ID|R

I

=12 A

D

DS(on)max

80 - - V

2 2.8 3.5

- 0.1 1 µA

- 10 100

- 10 100 nA

- 27.5 34

- 38.1 66

-1-

,

816-S

mΩ

Ω

Rev. 2.3 page 2 2008-07-03

BSC340N08NS3 G

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

C

iss

=0 V, VDS=40 V,

V

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

5)

Q

gs

Q

g(th)

Q

gd

Q

sw

GS

f =1 MHz

V

=40 V, VGS=10 V,

DD

=12 A, RG=1.6 Ω

I

D

=40 V, ID=12 A,

V

DD

V

=0 to 10 V

GS

- 564 756 pF

- 156 204

-7-

-8-ns

-3-

-11-

-2-

- 2.4 - nC

- 1.3 -

- 1.5 -

- 2.6 -

Gate charge total

Gate plateau voltage

Output charge

Q

V

Q

g

plateau

oss

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

5)

See figure 16 for gate charge parameter definition

I

S

I

S,pulse

V

SD

t

rr

Q

rr

VDD=40 V, VGS=0 V

=25 °C

T

C

VGS=0 V, IF=12 A,
T

=25 °C

j

VR=40 V, IF=12A,

di

/dt =100 A/µs

F

- 6.8 9.1

- 5.2 - V

- 9 12 nC

- - 23 A

--92

- 0.9 1.2 V

-43-ns

-41-nC

Rev. 2.3 page 3 2008-07-03