Infineon BSC150N03LD G Schematic [ru]
BSC150N03LD G
OptiMOS®3 Power-Transistors
Features
• Dual N-channel, logic level
• Fast switching MOSFETs for SMPS
• Optimized technology for DC/DC converters
1)
• Qualified according to JEDEC
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type Package Marking
BSC150N03LD G PG-TDSON-8 150N03LD
Maximum ratings, at T
=25 °C, unless otherwise specified
j
for target applications
product (FOM)
DS(on)
DS(on)
Product Summary
V
DS
R
DS(on),max
I
D
30 V
15
20 A
PG-TDSON-8
mΩ
Parameter Symbol Conditions Unit
Value
≤10 secs steady state
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
, T
VGS=10 V, TC=25 °C
V
=10 V, TC=100 °C
GS
=4.5 V, TC=25 °C
V
GS
=4.5 V,
V
GS
T
=100 °C
C
V
=10 V, TA=25 °C
GS
TC=25 °C
ID=20 A, R
TC=25 °C
=25 °C
3)
stg
T
A
GS
=25 Ω
3)
12.4 8
3.6 1.5
20
20
20
17
80
10
±20
26
-55 ... 150
55/150/56
A
mJ
V
W
°C
1)
J-STD20 and JESD22
Rev. 1.1 page 1 2008-05-29
BSC150N03LD G
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient, 6 cm² cooling area
Electrical characteristics, at T
3)
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
t≤10 s - - 35
steady state - - 85
- - 4.9 K/W
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSSVGS
V
GS(th)
I
DSS
=0 V, ID=1 mA
VDS=VGS, ID=250 µA
VDS=30 V, VGS=0 V,
T
=25 °C
j
V
=30 V, VGS=0 V,
DS
T
=125 °C
j
30 - - V
1 - 2.2
- 0.1 1 µA
- 10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
See figure 3
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. One transistor active.
I
R
R
g
GSS
DS(on)
G
fs
VGS=20 V, VDS=0 V
VGS=4.5 V, ID=20 A
=10 V, ID=20 A
V
GS
|VDS|>2|ID|R
I
=20 A
D
DS(on)max
- 10 100 nA
- 17.6 22
- 12.5 15
- 1.2 1.8
,
18 35 - S
mΩ
Ω
Rev. 1.1 page 2 2008-05-29
BSC150N03LD G
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Char
e Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
C
iss
=0 V, VDS=15 V,
V
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
4)
Q
gs
Q
g(th)
Q
gd
Q
sw
GS
f =1 MHz
V
=15 V, VGS=10 V,
DD
=20 A, R
I
D
V
DD
V
GS
G
=15 V, ID=20 A,
=0 to 4.5 V
=1.6 Ω
- 850 1100 pF
- 350 470
-16-
- 2.7 - ns
- 2.2 -
-12-
- 2.0 -
- 2.6 - nC
- 1.2 -
- 1.2 -
- 2.6 -
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q
V
Q
Q
Q
g
plateau
g
g(sync)
oss
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
4)
See figure 16 for gate charge parameter definition
I
S
I
S,pulse
V
SD
Q
rr
VDD=15 V, ID=20 A,
V
=0 to 10 V
GS
VDS=0.1 V,
V
=0 to 4.5 V
GS
VDD=15 V, VGS=0 V
TC=25 °C
VGS=0 V, IF=20 A,
T
=25 °C
j
VR=15 V, IF=IS,
di
/dt =400 A/µs
F
- 4.8 6.4
- 3.4 - V
- 10 13.2
- 4.2 - nC
-9-
- - 20 A
--80
- 0.93 1.1 V
- - 10 nC
Rev. 1.1 page 3 2008-05-29
1 Power dissipation 2 Drain current
P
=f(TC) ID=f(TC); VGS≥10 V
tot
BSC150N03LD G
30
25
25
20
20
15
[W]
15
tot
P
[A]
D
I
10
10
5
0
0 40 80 120 160
TC [°C]
5
0
0 40 80 120 160
TC [°C]
3 Safe operating area 4 Max. transient thermal impedance
I
=f(VDS); TC=25 °C; D =0 Z
D
parameter: t
10
p
3
=f(tp)
thJC
parameter: D =tp/T
10
limited by on-state
[A]
D
I
10
10
10
10
resistance
2
10 ms
DC
1
0
-1
10
-1
10
0
10
10 µs
100 µs
1 ms
1
1 µs
10
2
VDS [V]
0.5
0.2
1
0.1
0.05
[K/W]
0.02
thJC
Z
0.01
0.1
0.01
single pulse
0000001
10
-5
-6
10
10
-3
-4
10
10
-1
-2
10
tp [s]
10
0
Rev. 1.1 page 4 2008-05-29
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