INFINEON BFR360F User Manual
BFR360F
1
2
3
j
A
g
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR360F FBs
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)
98°C
T
S
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
1 = B 2 = E 3 = C
CEO
CES
CBO
EBO
C
B
P
tot
st
210 mW
150 °C
-65 ... 150
-65 ... 150
6 V
15
15
2
35 mA
4
TSFP-3
Parameter Symbol Value Unit
Junction - soldering point
1
TS is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
thJS
1
250
Jun-16-2003
K/W
BFR360F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
= 5 V, IE = 0
V
CB
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
IC = 15 mA, VCE = 3 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
6 9 - V
- - 10 µA
- - 100 nA
- - 1 µA
60 130 200 -
2
Jun-16-2003
BFR360F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
IC = 3 mA, VCE = 3 V, ZS = Z
Sopt
,
f = 1.8 GHz
Power gain, maximum available1)
IC = 15 mA, VCE = 3 V, ZS = Z
ZL = Z
, f = 1.8 GHz
Lopt
IC = 15 mA, VCE = 3 V, ZS = Z
ZL = Z
, f = 3 GHz
Lopt
Sopt
Sopt
,
,
f
C
C
C
F
G
T
min
cb
ce
eb
ma
11 14 - GHz
- 0.32 0.5 pF
- 0.2 -
- 0.4 -
- 1 - dB
-
-
15.5
11
-
-
Transducer gain
= 15 mA, VCE = 3 V, ZS = ZL = 50 ,
I
C
|S
21e
2
|
f = 1.8 GHz
I
= 15 mA, VCE = 3 V, ZS = ZL = 50 ,
C
f = 3 GHz
Third order intercept point at output2)
IP
3
VCE = 3 V, IC = 15 mA, f = 1.8 GHz,
ZS = ZL = 50
1dB Compression point at output
IC = 15 mA, VCE = 3 V, ZS = Z
= 50 ,
L
P
-1dB
f = 1.8 GHz
1
G
= |S
ma
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
21e
/ S
| (k-(k²-1)
12e
1/2
)
-
-
13
9
dB
-
-
- 24 - dBm
- 9 -
3
Jun-16-2003
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