INFINEON BFR340F User Manual
NPN Silicon RFTransistor
1
2
3
Preliminary data
Low voltage/ low current operation
Transistor frequency of 14 GHz
High insertion gain
Ideal for low current amplifiers and oscillators
ESD: Electrostatic discharge sensitive device, observe handling precaution!
BFR340F
Type Marking Pin Configuration Package
BFR340F FAs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)
T
118°C
S
Junction temperature T
Ambient temperature T
Storage temperature T
Symbol Value Unit
6 V
17
2
10 mA
2
60 mW
150 °C
-65 ... 150
-65 ... 150
C
B
P
CEO
CBO
EBO
tot
j
A
stg
Thermal Resistance
Junction - soldering point
2)
R
thJS
530
K/W
1
T
is measured on the collector lead at the soldering point to the pcb.
S
2
For calculation of R
please refer to Application Note Thermal Resistance
thJA
Aug-23-20011
BFR340F
Electrical Characteristics at T
= 25°C, unless otherwise specified.
A
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0
C
Collector-base cutoff current
V
= 5 V, IE = 0
CB
Emitter-base cutoff current
V
= 1 V, IC = 0
EB
DC current gain
I
= 5 mA, VCE = 2 V
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CBO
I
EBO
h
FE
6 9 - V
- - 100 nA
- - 1 µA
70 100 200
-
Aug-23-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFR340F
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
= 6 mA, VCE = 3 V, f = 1 GHz
C
Collector-base capacitance
V
= 5 V, 1 MHz, emitter grounded
CB
Collector-emitter capacitance
V
= 5 V, 1 MHz, base grounded
CE
Emitter-base capacitance
V
= 0.5 V, 1 MHz, collector grounded
EB
Noise figure
= 3 V, IC = 1 mA, f = 1.8 GHz,
V
CE
Z
= Z
S
Sopt
Power gain1)
V
= 3 V, IC = 5 mA, f=1,8GHz, ZS=Z
CE
V
= 3 V, IC = 5 mA, f=3GHz, ZS=Z
CE
Sopt
Sopt
, ZL=Z
, ZL=Z
Lopt
Lopt
Insertion power gain
Symbol Values Unit
min. typ. max.
f
T
C
cb
C
ce
C
eb
F
min
G
ms
G
ma
|S21|
2
12 14 - GHz
- 0.21 0.4 pF
- 0.17 -
- 0.11 -
- 1.15 - dB
-
-
16
12
-
-
V
= 3 V, IC = 5 mA, f= 1.8GHz, ZS = Z
CE
V
= 3 V, IC = 5 mA, f= 3GHz, ZS = Z
CE
Sopt
Third order intercept point at output2)
V
= 3 V, IC = 5 mA, f= 1.8GHz, ZS = Z
CE
1 dB Compression point at output3)
= 3 V, IC = 5 mA, f= 1.8GHz, ZS = Z
V
CE
1
= |
G
ma
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
3
DC current at no input power
/
S
21
| (k-(k2-1)
S
12
1/2
);
= |
G
ms
/
S
21
= 50
Sopt
= 50
OIP
= 50
= 50
P
-1dB
Sopt
Sopt
|
S
12
from 0.1 MHz to 6 GHz
3
-
-
13
9.5
-
-
- 12 - dBm
- 0 -
Aug-23-20013
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