Infineon BFR193 Schematic [ru]
NPN Silicon RF Transistor
g
BFR193
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz
F = 1.3 dB at 900 MHz
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR193 RCs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
3
Parameter
Symbol Value Unit
2
VPS05161
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
69 °C
S
1)
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
C
B
P
R
CEO
CES
CBO
EBO
tot
j
A
st
thJS
12 V
20
20
2
80 mA
10
580 mW
150 °C
-65 ... 150
-65 ... 150
140
K/W
Aug-09-20011
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFR193
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0
C
Collector-emitter cutoff current
= 20 V, VBE = 0
V
CE
Collector-base cutoff current
= 10 V, IE = 0
V
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 30 mA, VCE = 8 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12 - - V
- - 100 µA
- - 100 nA
- - 1 µA
50 100 200
-
Aug-09-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFR193
Parameter
AC characteristics (verified by random sampling)
Transition frequency
= 50 mA, VCE = 8 V, f = 500 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Noise figure
= 10 mA, VCE = 8 V, ZS = Z
I
C
Sopt
,
f = 900 MHz
f = 1.8 GHz
Symbol Values Unit
min. typ. max.
f
C
C
C
F
T
cb
ce
eb
6 8 - GHz
- 0.68 1 pF
- 0.24 -
- 1.8 -
-
-
1.3
2.1
dB
-
-
Power gain, maximum available 1)
= 30 mA, VCE = 8 V, ZS = Z
I
C
Sopt
, ZL = Z
f = 900 MHz
f = 1.8 GHz
Transducer gain
= 30 mA, VCE = 8 V, ZS = ZL = 50 ,
I
C
f = 900 MHz
f = 1.8 GHz
1
G
= |S21 / S12| (k-(k2-1)
ma
1/2
)
Lopt
,
G
|S
ma
21e
-
-
2
|
-
-
14.5
9
12.5
7
-
-
-
-
Aug-09-20013
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