Infineon BFR181T Schematic [ru]
NPN Silicon RF Transistor
g
Preliminary data
BFR181T
For low noise, high-gain broadband amplifiers at
3
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR181T RFs 1 = B 2 = E 3 = C SC75
Maximum Ratings
Parameter
Symbol Value Unit
2
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
S
79°C
1)
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
P
R
CEO
CES
CBO
EBO
C
B
tot
j
A
st
thJS
12 V
20
20
2
20 mA
2
175 mW
150 °C
-65 ... 150
-65 ... 150
405
K/W
Aug-09-20011
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFR181T
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
V
= 20 V, VBE = 0
CE
Collector-base cutoff current
V
= 10 V, IE = 0
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 5 mA, VCE = 8 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12 - - V
- - 100 µA
- - 100 nA
- - 1 µA
50 100 200 -
Aug-09-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFR181T
Parameter
AC characteristics (verified by random sampling)
Transition frequency
I
= 10 mA, VCE = 8 V, f = 500 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
= 2 mA, VCE = 8 V, ZS = Z
I
C
Sopt
,
f = 900 MHz
f = 1.8 GHz
Symbol Values Unit
min. typ. max.
f
C
C
C
F
T
cb
ce
eb
6 8 - GHz
- 0.26 0.4 pF
- 0.17 -
- 0.3 -
-
-
1.45
1.8
dB
-
-
Power gain, maximum stable 1)
I
= 5 mA, VCE = 8 V, ZS = Z
C
Sopt
, ZL = Z
f = 900 MHz
Power gain, maximum available 2)
I
= 5 mA, VCE = 8 V, ZS = Z
C
Sopt
, ZL = Z
f = 1.8 GHz
Transducer gain
I
= 5 mA, VCE = 8 V, ZS = ZL = 50 ,
C
f = 900 MHz
f = 1.8 GHz
1
G
= |S21 / S12|
ms
2
G
= |S21 / S12| (k-(k2-1)
ma
1/2
)
Lopt
Lopt
,
,
G
G
|S
ms
ma
21e
- 19.5 -
- 13.5 -
2
|
-
-
15.5
10.5
-
-
Aug-09-20013
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