Infineon BFR181 Schematic [ru]

NPN Silicon RF Transistor

BFR181



3

For low noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA



fT = 8 GHz

F = 1.45 dB at 900 MHz

1

VPS05161

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR181 RFs 1 = B 2 = E 3 = C SOT23

Maximum Ratings
Parameter Symbol Value Unit

2

Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I

Total power dissipation

TS  91 °C

1)

Junction temperature T
Ambient temperature T
Storage temperature T

Thermal Resistance

Junction - soldering point

1

T

is measured on the collector lead at the soldering point to the pcb

S

2

For calculation of R

thJA

2)

please refer to Application Note Thermal Resistance

C
B

P

R

CEO
CES
CBO
EBO

tot

j
A
stg

thJS

12 V
20
20

2

20 mA

2

175 mW

150 °C

-65 ... 150

-65 ... 150



335

K/W

Jul-30-20011

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BFR181

Parameter

DC characteristics

Collector-emitter breakdown voltage

= 1 mA, IB = 0

I

C

Collector-emitter cutoff current

V

= 20 V, VBE = 0

CE

Collector-base cutoff current

V

= 10 V, IE = 0

CB

Emitter-base cutoff current

= 1 V, IC = 0

V

EB

DC current gain

= 5 mA, VCE = 8 V

I

C

Symbol Values Unit

min. typ. max.

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

12 - - V

- - 100 µA

- - 100 nA

- - 1 µA

50 100 200 -

Jul-30-20012

BFR181

A

Electrical Characteristics at T

= 25°C, unless otherwise specified.

Parameter

AC characteristics (verified by random sampling)

Transition frequency

I

= 10 mA, VCE = 8 V, f = 500 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Collector-emitter capacitance

V

= 10 V, f = 1 MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 2 mA, VCE = 8 V, ZS = Z

C

Sopt

,

f = 900 MHz

Symbol Values Unit

min. typ. max.

f

C

C

C

F

T

cb

ce

eb

6 8 - GHz

- 0.26 0.45 pF

- 0.18 -

- 0.3 -

-

1.45

dB

-

f = 1.8 GHz

Power gain, maximum stable 1)

I

= 5 mA, VCE = 8 V, ZS = Z

C

Sopt

, ZL = Z

f = 900 MHz
Power gain, maximum available 2)

I

= 5 mA, VCE = 8 V, ZS = Z

C

Sopt

, ZL = Z

f = 1.8 GHz

Transducer gain

I

= 5 mA, VCE = 8 V, ZS = ZL = 50 ,

C

f = 900 MHz
f = 1.8 GHz

1

Gms = |S21 / S12|

2

Gma = |S21 / S12| (k-(k2-1)

1/2

)

Lopt

Lopt

,

,

G

G

|S

ms

ma

21e

-

1.8

-

- 18 -

- 11.5 -

2

|

-

-

14

9

-

-

Jul-30-20013