INFINEON BFQ19S User Manual
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查询BFQ19S供应商
NPN Silicon RF Transistor
BFQ19S
For low noise, low distortion broadband
2
1
amplifiers in antenna and
3
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFQ19S FG 1 = B 2 = C 3 = E SOT89
Maximum Ratings
Parameter
Symbol Value Unit
2
VPS05162
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
85 °C
S
1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
V
V
V
V
I
I
P
T
T
T
R
C
B
CEO
CES
CBO
EBO
tot
j
A
st
thJS
15 V
20
20
3
75 mA
10
1 W
150 °C
-65 ... 150
-65 ... 150
65
K/W
Jun-22-20011
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFQ19S
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
V
= 20 V, VBE = 0
CE
V
= 10 V, IE = 0
CB
= 2 V, IC = 0
V
EB
= 70 mA, VCE = 8 V
I
C
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
ValuesSymbol Unit
max.min. typ.
-
-
- 100
100-
10--
40 100 220
V--15
µACollector-emitter cutoff current
nACollector-base cutoff current
µAEmitter-base cutoff current
-DC current gain
Jun-22-20012
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