INFINEON BFP640 User Manual

BFP640

j

A

g

NPN Silicon Germanium RF Transistor

3

4

BFP640E/L6327 and E/L7764

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.65 dB at 1.8 GHz

Outstanding noise figure F = 1.3 dB at 6 GHz

• High maximum stable gain

Gms = 24 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 70 GHz f

• L6327 and L7764 are early Pb-free

ESD: Electrostatic discharge sensitive device, observe handling precaution!

-Silicon Germanium technology

T

1

2

VPS05605

Type Marking Pin Configuration Package

BFP640 R4s

1=B 2=E 3=C 4=E - - SOT343

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage V

Collector-base voltage V

Emitter-base voltage V

Collector current I

Base current I

Total power dissipation1)

T

≤ 90°C

S

P

Junction temperature T

Ambient temperature T

Storage temperature T

CEO

CES

CBO

EBO

C

B

tot

st

4 V

13

1.2

50 mA

3

200 mW

150 °C

-65 ... 150

1

TS is measured on the collector lead at the soldering point to the pcb

1

Mar-01-2004

BFP640

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point

1)

R

thJS

Electrical Characteristics at TA = 25°C, unless otherwise specified

≤ 300

K/W

Parameter

DC Characteristics

Collector-emitter breakdown voltage

= 1 mA, IB = 0

I

C

Collector-emitter cutoff current

= 13 V, VBE = 0

V

CE

Collector-base cutoff current

= 5 V, IE = 0

V

CB

Emitter-base cutoff current

= 0.5 V, IC = 0

V

EB

DC current gain

= 30 mA, VCE = 3 V

I

C

1

For calculation of

R

please refer to Application Note Thermal Resistance

thJA

Symbol Values Unit

min. typ. max.

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

4 4.5 - V

- - 30 µA

- - 100 nA

- - 3 µA

100 180 320 -

2

Mar-01-2004

BFP640

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter

AC Characteristics (verified by random sampling)

Transition frequency

= 30 mA, VCE = 3 V, f = 1 GHz

I

C

Collector-base capacitance

= 3 V, f = 1 MHz

V

CB

Collector emitter capacitance

= 3 V, f = 1 MHz

V

CE

Emitter-base capacitance

= 0.5 V, f = 1 MHz

V

EB

Noise figure

= 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = Z

I

C

= 5 mA, VCE = 3 V, f = 6 GHz, ZS = Z

I

C

Sopt

Symbol Values Unit

min. typ. max.

f

T

C

cb

C

ce

C

eb

F

30 40 - GHz

- 0.09 0.2 pF

- 0.23 -

- 0.5 -

-

0.65

1.3

dB

-

Power gain, maximum stable1)

= 30 mA, VCE = 3 V, ZS = Z

I

C

= Z

Z

L

, f = 1.8 GHz

Lopt

Sopt

,

Power gain, maximum available1)

= 30 mA, VCE = 3 V, ZS = Z

I

C

= Z

Z

L

, f = 6 GHz

Lopt

Sopt

,

Transducer gain

= 30 mA, VCE = 3 V, ZS = Z

I

C

= 50 Ω,

L

f = 1.8 GHz

= 30 mA, VCE = 3 V, ZS = Z

I

C

= 50 Ω,

L

f = 6 GHz

Third order intercept point at output2)

= 3 V, IC = 30 mA, f = 1.8 GHz,

V

CE

= Z

Z

S

= 50 Ω

L

1dB Compression point at output

= 30 mA, VCE = 3 V, ZS = Z

I

C

= 50 Ω,

L

f = 1.8 GHz

G

|S

IP

P

ms

ma

21e

3

-1dB

- 24 - dB

- 12.5 - dB

2

|

-

21

10.5

dB

-

- 26.5 - dBm

- 13 -

1

G

= |S

ma

2

IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50

21e

/ S

| (k-(k²-1)

12e

1/2

), Gms = |S

/ S

12e

|

21e

Ω from 0.1 MHz to 6 GHz

3

Mar-01-2004