BFP540
j
A
g
NPN Silicon RF Transistor
3
4
• For highest gain low noise amplifier
at 1.8 GHz
• Outstanding G
Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET
45 - Line
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP540 ATs
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)
T
≤ 77°C
S
Junction temperature T
= 21 dB
ms
1
1=B 2=E 3=C 4=E - - SOT343
4.5 V
14
14
1
80 mA
8
250 mW
150 °C
C
B
P
CEO
CES
CBO
EBO
tot
2
VPS05605
Ambient temperature T
Storage temperature T
st
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1
TS is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
thJS
1
≤ 290
Jan-28-2004
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
BFP540
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
= 14 V, VBE = 0
V
CE
Collector-base cutoff current
= 5 V, IE = 0
V
CB
Emitter-base cutoff current
= 0.5 V, IC = 0
V
EB
DC current gain
= 20 mA, VCE = 3.5 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5 5 - V
- - 10 µA
- - 100 nA
- - 10 µA
50 110 200 -
2
Jan-28-2004
BFP540
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
= 50 mA, VCE = 4 V, f = 1 GHz
I
C
Collector-base capacitance
= 2 V, f = 1 MHz
V
CB
Collector emitter capacitance
= 2 V, f = 1 MHz
V
CE
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Noise figure
= 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = Z
I
C
= 5 mA, VCE = 2 V, f = 3 GHz, ZS = Z
I
C
Sopt
Sopt
Symbol Values Unit
min. typ. max.
f
T
C
cb
C
ce
C
eb
F
21 30 - GHz
- 0.14 0.24 pF
- 0.33 -
- 0.65 -
-
-
0.9
1.3
1.4
dB
-
Power gain, maximum stable1)
= 20 mA, VCE = 2 V, ZS = Z
I
C
= Z
Z
L
, f = 1.8 GHz
Lopt
Sopt
,
Power gain, maximum available1)
= 20 mA, VCE = 2 V, ZS = Z
I
C
= Z
Z
L
, f = 3 GHz
Lopt
Sopt
,
Transducer gain
= 20 mA, VCE = 2 V, ZS = Z
I
C
= 50 Ω,
L
f = 1.8 GHz
= 20 mA, VCE = 2 V, ZS = Z
I
C
= 50 Ω,
L
f = 3 GHz
Third order intercept point at output2)
= 2 V, IC = 20 mA, f = 1.8 GHz,
V
CE
= Z
Z
S
= 50 Ω
L
1dB Compression point at output
= 20 mA, VCE = 2 V, ZS = Z
I
C
= 50 Ω,
L
f = 1.8 GHz
G
G
|S
IP
P
ms
ma
21e
3
-1dB
- 21.5 - dB
- 16 - dB
2
|
16
-
18.5
14.5
dB
-
-
- 24.5 - dBm
- 11 -
1
G
= |S
ma
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
21e
/ S
| (k-(k²-1)
12e
1/2
), Gms = |S
/ S
12e
|
21e
Ω from 0.1 MHz to 6 GHz
3
Jan-28-2004
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