Infineon BFP520 Schematic [ru]
NPN Silicon RF Transistor
For highest gain low noise amplifier
at 1.8 GHz and 2 mA / 2 V
BFP520SIEGET45
3
4
Outstanding G
= 23 dB
ms
Noise Figure F = 0.95 dB
For oscillators up to 15 GHz
Transition frequency fT = 45 GHz
Gold metallization for high reliability
SIEGET
45 GHz f
45 - Line
- Line
T
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP520 APs 1 = B 2 = E 3 = C 4 = E
SOT343
Maximum Ratings
Parameter
Symbol Value Unit
2
VPS05605
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
105 °C
S
1)
P
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
CEO
CBO
EBO
C
B
tot
j
A
stg
thJS
2.5 V
10
1
40 mA
4
100 mW
150 °C
-65 ... 150
-65 ... 150
450
K/W
Aug-09-20011
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFP520SIEGET45
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-base cutoff current
= 5 V, IE = 0
V
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 20 mA, VCE = 2 V
I
C
AC characteristics (verified by random sampling)
Transition frequency
= 30 mA, VCE = 2 V, f = 2 GHz
I
C
Collector-base capacitance
= 2 V, f = 1 MHz
V
CB
Collector-emitter capacitance
= 2 V, f = 1 MHz
V
CE
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Noise figure
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CBO
I
EBO
h
FE
f
T
C
cb
C
ce
C
eb
F
2.5 3 3.5 V
- - 200 nA
- - 35 µA
70 110 200
-
- 45 - GHz
- 0.06 - pF
- 0.3 -
- 0.35 -
- 0.95 - dB
= 2 mA, VCE = 2 V, ZS = Z
I
C
Sopt
,
f = 1.8 GHz
Power gain, maximum stable 1)
= 20 mA, VCE = 2 V, ZS = Z
I
C
Sopt
, ZL = Z
f = 1.8 GHz
Insertion power gain
= 20 mA, VCE = 2 V, f = 1.8 GHz,
I
C
= ZL = 50
Z
S
Third order intercept point at output
= 2 V, f = 1.8 GHz, ZS=Z
V
CE
= 20 mA
I
C
= 7 mA
I
C
Sopt
, ZL=Z
1dB compression point
= 2 V, f = 1.8 GHz, ZS=Z
V
CE
= 20 mA
I
C
= 7 mA
I
C
1
G
= |S21 / S12|
ms
Sopt
, ZL=Z
Lopt
Lopt
Lopt
,
,
,
G
ms
|S21|
IP
3
P
-1dB
- 23 -
2
- 21 - dB
-
-
-
-
25
17
12
5
dBm
-
-
-
-
Aug-09-20012
Common Emitter S-Parameters
BFP520SIEGET45
f
GHz MAG ANG MAG ANG MAG ANG MAG ANG
VCE = 2 V, /C = 20 mA
0.01
0.1
0.5
1
2
3
4
5
6
0.7244
0.7251
0.6368
0.4768
0.2816
0.2251
0.2552
0.3207
0.3675
S
11
-0.7
-8.4
-40.7
-73.6
-123.8
-166.1
156.2
133.6
118.7
32.273
31.637
27.293
19.601
11.021
7.481
5.636
4.488
3.683
S
21
178.6
171.4
140.7
113.5
84.9
67.6
53.1
39.7
27.5
0.0007
0.0041
0.0194
0.0351
0.0057
0.0788
0.0994
0.1177
0.1343
S
12
69.4
92.8
75.9
66.5
56.3
49.2
41.5
32.9
24.7
0.9052
0.9363
0.8523
0.6496
0.3818
0.2407
0.1544
0.0951
0.0545
S
22
-128.9
177.6
Common Emitter Noise Parameters
f
GHz dB dB MAG ANG
VCE = 2 V, IC = 2 mA
F
min
1)
Ga
1)
Γ
opt
R
N
r
n
- dB dB
F
50
2)
|S21|
1.2
-4.4
-26.7
-46.1
-64.6
-73.6
-95.3
2 2)
0.9
1.8
2.4
3
4
5
6
VCE = 2 V, IC = 5 mA
0.9
1.8
2.4
3
4
5
6
1) Input matched for minimum noise figure, output for maximum gain 2) ZS = ZL = 50
0.72
0.95
1.07
1.31
1.35
1.71
1.95
0.89
1.08
1.12
1.32
1.35
1.61
1.81
21.5
20.1
16.1
14.5
11.6
9.5
8.1
22.1
20.5
18.1
16.2
13.5
11.5
10.5
0.64
0.49
0.45
0.41
0.26
0.14
0.12
0.49
0.38
0.34
0.29
0.16
0.08
0.07
14
30
41
54
82
128
151
12
22
33
45
71
120
150
21.5
19.1
18.1
16.5
12.5
9.1
8.1
16.1
14.1
14.1
13.5
11.1
10.1
8.1
0.43
0.38
0.36
0.33
0.25
0.18
0.16
0.32
0.28
0.28
0.27
0.22
0.21
0.16
1.75
1.55
1.61
1.71
1.61
1.85
1.95
1.51
1.38
1.41
1.51
1.45
1.65
1.81
16.11
15.14
14.07
13.13
11.49
9.87
8.28
21.94
19.34
17.54
16.01
13.82
11.93
10.23
For more and detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
Aug-09-20013
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