Infineon BFP420 Schematic [ru]
NPN Silicon RF Transistor
For high gain low noise amplifiers
For oscillators up to 10 GHz
Noise figure F = 1.1 dB at 1.8 GHz
BFP420SIEGET25
3
4
outstanding G
Transition frequency fT = 25 GHz
Gold metallization for high reliability
SIEGET 25 GHz fT - Line
= 21 dB at 1.8 GHz
ms
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP420 AMs 1 = B 2 = E 3 = C 4 = E
SOT343
Maximum Ratings
Parameter
Symbol Value Unit
2
VPS05605
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
107°C
S
1)
P
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the emitter lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
CEO
CBO
EBO
C
B
tot
j
A
stg
thJS
4.5 V
15
1.5
35 mA
3
160 mW
150 °C
-65 ... 150
-65 ... 150
260
K/W
Aug-20-20011
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFP420SIEGET25
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-base cutoff current
= 5 V, IE = 0
V
CB
Emitter-base cutoff current
= 1.5 V, IC = 0
V
EB
DC current gain
= 20 mA, VCE = 4 V
I
C
AC characteristics (verified by random sampling)
Transition frequency
I
= 30 mA, VCE = 3 V, f = 2 GHz
C
Collector-base capacitance
= 2 V, f = 1 MHz
V
CB
Collector-emitter capacitance
= 2 V, f = 1 MHz
V
CE
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Noise figure
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CBO
I
EBO
h
FE
f
T
C
cb
C
ce
C
eb
F
4.5 5 - V
- - 200 nA
- - 35 µA
50 100 150
-
18 25 - GHz
- 0.15 0.3 pF
- 0.37 -
- 0.55 -
- 1.1 - dB
= 5 mA, VCE = 2 V, ZS = Z
I
C
Sopt
f = 1.8 GHz
Power gain, maximum stable 1)
= 20 mA, VCE = 2 V, ZS = Z
I
C
Sopt
f = 1.8 GHz
Insertion power gain
= 20 mA, VCE = 2 V, f = 1.8 GHz,
I
C
= ZL = 50
Z
S
Third order intercept point
= 20 mA, VCE = 2 V, ZS=Z
I
C
Sopt
f = 1.8 GHz
1dB Compression point
= 20 mA, VCE = 2 V, f = 1.8 GHz,
I
C
Z
S=ZSopt
1
G
= |S21 / S12|
ms
, ZL=Z
Lopt
,
, ZL = Z
, ZL=Z
Lopt
Lopt
,
,
G
ms
|S21|
IP
3
P
-1dB
- 21 -
2
14 17 -
- 22 - dBm
- 12 -
Aug-20-20012
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BFP420SIEGET25
IS = 0.20045 fA
VAF = 28.383 V
NE = 2.0518 -
VAR = 19.705 V
NC = 1.1724 -
RBM = 3.4849
CJE = 1.8063 fF
TF = 6.7661 ps
ITF = 1mA
VJC = 0.81969 V
TR = 2.3249 ns
MJS = 0-
XTI = 3 -
BF = 72.534 -
IKF = 0.48731 A
BR = 7.8287 -
IKR = 0.69141 A
RB = 8.5757
RE = 0.31111
VJE = 0.8051 V
XTF = 0.42199 -
PTF = 0 deg
MJC = 0.30232 -
CJS = 0F
XTB = 0-
FC = 0.73234 -
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS = 3.5 fA
N = 1.02 -
NF = 1.2432 -
ISE = 19.049 fA
NR = 1.3325 -
ISC = 0.019237 fA
IRB = 0.72983 mA
RC = 0.10105
MJE = 0.46576 -
VTF = 0.23794 V
CJC = 234.53 fF
XCJC = 0.3 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
RS = 10
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
C
CB
L
BO
B
The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
L
BI
C
BE
Transistor
Chip
E’
L
EI
L
EO
E
L
CI
C’B’
C’-E’Diode
C
CE
L
CO
C
EHA07389
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
LBI = 0.47 nH
L
= 0.53 nH
BO
L
= 0.23 nH
EI
L
= 0.05 nH
EO
L
= 0.56 nH
CI
L
= 0.58 nH
CO
C
= 136 fF
BE
C
= 6.9 fF
CB
C
= 134 fF
CE
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
Aug-20-20013
Loading...