INFINEON BFP405 User Manual
NPN Silicon RF Transistor
A
j
A
g
• For low current applications
BFP405
4
3
2
1
• For oscillators up to 12 GHz
• Noise figure F = 1.25 dB at 1.8 GHz
outstanding G
• Transition frequency f
= 23 dB at 1.8 GHz
ms
= 25 GHz
T
• Gold metallization for high reliability
• SIEGET 25 GHz f
T - Line
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP405 ALs
1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
> 0 °C
A
T
≤ 0 °C
V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)
T
≤ 120 °C
S
P
Junction temperature T
CEO
CES
CBO
EBO
C
B
tot
4.5
4.1
15
15
1.5
12 mA
1
55 mW
150 °C
V
Ambient temperature T
Storage temperature T
st
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1
TS is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
thJS
≤ 520
K/W
2005-10-11
1
Electrical Characteristics at TA = 25°C, unless otherwise specified
BFP405
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
= 15 V, VBE = 0
V
CE
Collector-base cutoff current
= 5 V, IE = 0
V
CB
Emitter-base cutoff current
= 0.5 V, IC = 0
V
EB
DC current gain
= 5 mA, VCE = 4 V, pulse measured
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5 5 - V
- - 10 µA
- - 100 nA
- - 1 µA
60 95 130 -
2005-10-11
2
BFP405
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
= 10 mA, VCE = 3 V, f = 2 GHz
I
C
Collector-base capacitance
= 2 V, f = 1 MHz, VBE = 0 ,
V
CB
emitter grounded
Collector emitter capacitance
= 2 V, f = 1 MHz, VBE = 0 ,
V
CE
base grounded
Emitter-base capacitance
= 0.5 V, f = 1 MHz, VCB = 0 ,
V
EB
collector grounded
Noise figure
Symbol Values Unit
min. typ. max.
f
C
C
C
F
T
cb
ce
eb
18 25 - GHz
- 0.05 0.1 pF
- 0.24 -
- 0.29 -
- 1.25 - dB
= 2 mA, VCE = 2 V, f = 1.8 GHz, ZS = Z
I
C
Power gain, maximum stable1)
= 5 mA, VCE = 2 V, ZS = Z
I
C
= Z
Z
L
, f = 1.8 GHz
Lopt
Sopt
,
Insertion power gain
= 2 V, IC = 5 mA, f = 1.8 GHz,
V
CE
= ZL = 50 Ω
Z
S
Third order intercept point at output2)
= 2 V, IC = 5 mA, f = 1.8 GHz,
V
CE
= ZL = 50 Ω
Z
S
1dB Compression point at output
= 5 mA, VCE = 2 V, ZS = ZL = 50 Ω,
I
C
Sopt
G
ms
|S21|
IP
3
P
-1dB
2
14 18.5 -
f = 1.8 GHz
1
G
= |S21 / S12|
ms
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω from 0.1 MHz to 6 GHz
- 23 - dB
- 15 - dBm
- 5 -
2005-10-11
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