Infineon BFP196 Schematic

NPN Silicon RF Transistor

g



For low noise, low distortion broadband

BFP196

3

amplifiers in antenna and telecommunications

4

systems up to 1.5 GHz at collector currents from 20 mA to 80 mA



Power amplifier for DECT and PCN systems



fT = 7.5 GHz

1

F = 1.5 dB at 900 MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFP196 RIs 1 = C 2 = E 3 = B 4 = E

SOT143

Maximum Ratings Parameter

Collector-emitter voltage

Symbol Value Unit

V

CEO

12 V

2

VPS05178

Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current

Base current

Total power dissipation

T

 77 °C

S

1)

Junction temperature Ambient temperature Storage temperature

Thermal Resistance

Junction - soldering point

1

T

is measured on the collector lead at the soldering point to the pcb

S

2

For calculation of R

thJA

2)

please refer to Application Note Thermal Resistance

V V V I

I P

T T T

R

C B

CES CBO

EBO

tot

j A st

thJS

20 20

2

100 mA

12

700 mW

150 °C

-65 ... 150



105

K/W

Jun-22-20011

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BFP196

Parameter

DC characteristics

Collector-emitter breakdown voltage

= 1 mA, IB = 0

I

C

V

= 20 V, VBE = 0

CE

Collector-base cutoff current

V

= 10 V, IE = 0

CB

Emitter-base cutoff current

= 1 V, IC = 0

V

EB

DC current gain

= 50 mA, VCE = 8 V

I

C

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

Values UnitSymbol

min. max.typ.

12 --

- 100-

- - 100 nA

- - 1 µA

50 100 200 -

V

µACollector-emitter cutoff current

Jun-22-20012

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BFP196

Parameter

AC characteristics (verified by random sampling)

Transition frequency

= 70 mA, VCE = 8 V, f = 500 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

Collector-emitter capacitance

= 10 V, f = 1 MHz

V

CE

Emitter-base capacitance

= 0.5 V, f = 1 MHz

V

EB

Noise figure

= 20 mA, VCE = 8 V, ZS = Z

I

C

Sopt

,

f = 900 MHz f = 1.8 GHz

Symbol Values Unit

min. typ. max.

f

C

F

T

cb

ce

eb

5 7.5 - GHz

- 0.97 1.4 pF

- 0.3 -

- 3.7 -

-

1.5

2.5

dB

-

Power gain, maximum available 1)

= 50 mA, VCE = 8 V, ZS = Z

I

C

Sopt

, ZL = Z

f = 900 MHz f = 1.8 GHz

Transducer gain

= 50 mA, VCE = 8 V, ZS = ZL = 50 ,

I

C

f = 900 MHz f = 1.8 GHz

Lopt

,

G

|S

ma

21e

-

2

|

-

16 10

12.5

6.5

-

1

G

= |S21 / S12| (k-(k2-1)

ma

1/2

)

Jun-22-20013

Infineon BFP196 Schematic [ru]