INFINEON BFP193W User Manual
NPN Silicon RF Transistor*
j
A
g
• For low noise, high-gain amplifiers up to 2 GHz
BFP193W
4
3
2
1
• For linear broadband amplifiers
= 8 GHz, F = 1 dB at 900 MHz
• f
T
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP193W RCs
1 = E 2 = C 3 = E 4 = B - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation1)
T
≤ 66°C
S
P
Junction temperature T
CEO
CES
CBO
EBO
C
B
tot
12 V
20
20
2
80 mA
10
580 mW
150 °C
Ambient temperature T
Storage temperature T
st
-55 ... 150
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1
TS is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
R
thJS
≤ 145
K/W
2005-09-29
1
Electrical Characteristics at TA = 25°C, unless otherwise specified
BFP193W
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
= 20 V, VBE = 0
V
CE
Collector-base cutoff current
= 10 V, IE = 0
V
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain-
= 30 mA, VCE = 8 V, pulse measured
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12 - - V
- - 100 µA
- - 100 nA
- - 1 µA
70 100 140 -
2005-09-29
2
BFP193W
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
= 50 mA, VCE = 8 V, f = 500 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz, VBE = 0 ,
V
CB
emitter grounded
Collector emitter capacitance
= 10 V, f = 1 MHz, VBE = 0 ,
V
CE
base grounded
Emitter-base capacitance
= 0.5 V, f = 1 MHz, VCB = 0 ,
V
EB
collector grounded
Noise figure
Symbol Values Unit
min. typ. max.
f
T
C
cb
C
ce
C
eb
F
6 8 - GHz
- 0.63 0.9 pF
- 0.36 -
- 2.25 -
dB
= 10 mA, VCE = 8 V, ZS = Z
I
C
Sopt
f = 900 MHz
= 10 mA, VCE = 8 V, ZS = Z
I
C
Sopt
f = 1.8 GHz
Power gain, maximum available1)
= 30 mA, VCE = 8 V, ZS = Z
I
C
= Z
Z
L
= 30 mA, VCE = 8 V, ZS = Z
I
C
= Z
Z
L
, f = 900 MHz
Lopt
, f = 1.8 GHz
Lopt
Sopt
Sopt
Transducer gain
= 30 mA, VCE = 8 V, ZS = ZL = 50Ω ,
I
C
f = 900 MHz
= 30 mA, VCE = 8 V, ZS = ZL = 50Ω ,
I
C
f = 1.8 GHz
1
Gma = |S21 / S12| (k-(k²-1)
1/2)
,
,
,
,
G
|S
ma
21e
-
-
-
-
2
|
-
-
1
1.6
20.5
13.5
15
9
-
-
-
dB
-
-
2005-09-29
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