Infineon BFP183 Schematic [ru]
NPN Silicon RF Transistor*
j
A
g
BFP183
• For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
= 8 GHz, F = 0.9 dB at 900 MHz
• f
T
• Pb-free (RoHS compliant) package
1)
3
2
4
1
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP183 RHs
1=C 2=E 3=B 4=E - - SOT143
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation2)
P
CEO
CES
CBO
EBO
C
B
tot
12 V
20
20
2
65 mA
5
250 mW
TS ≤ 76 °C
Junction temperature T
Ambient temperature T
Storage temperature T
st
150 °C
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1
Pb-containing package may be available upon special request
2
TS is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
3)
please refer to Application Note Thermal Resistance
R
thJS
≤ 295
K/W
2007-04-20
1
Electrical Characteristics at TA = 25°C, unless otherwise specified
BFP183
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
= 20 V, VBE = 0
V
CE
Collector-base cutoff current
= 10 V, IE = 0
V
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain-
= 15 mA, VCE = 8 V, pulse measured
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12 - - V
- - 100 µA
- - 100 nA
- - 1 µA
70 100 140 -
2007-04-20
2
BFP183
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
= 25 mA, VCE = 8 V, f = 500 MHz
I
C
Collector-base capacitance
= 10 V, f = 1 MHz, VBE = 0 ,
V
CB
emitter grounded
Collector emitter capacitance
= 10 V, f = 1 MHz, VBE = 0 ,
V
CE
grounded
base
Emitter-base capacitance
= 0.5 V, f = 1 MHz, VCB = 0 ,
V
EB
collector grounded
Noise figure
Symbol Values Unit
min. typ. max.
f
T
C
cb
C
ce
C
eb
F
6 8 - GHz
- 0.3 0.5 pF
- 0.27 -
- 1.1 -
dB
= 5 mA, VCE = 8 V, ZS = Z
I
C
Sopt
,
f = 900 MHz
f = 1.8 GHz
Power gain, maximum stable1)
= 15 mA, VCE = 8 V, ZS = Z
I
C
Sopt
, ZL = Z
f = 900 MHz
Power gain, maximum available1)
= 15 mA, VCE = 8 V, ZS = Z
I
C
Sopt
, ZL = Z
f = 1.8 GHz
Transducer gain
= 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,
I
C
f = 900 MHz
f = 1.8 GHz
1
= |
G
ma
S
21e
/
S
12e
| (k-(k²-1)
1/2
),
= |
G
ms
-
-
Lopt
Lopt
,
,
G
G
|S
ms
ma
21e
2
|
- 22 - dB
- 15.5 - dB
-
-
/
S
21
|
S
12
0.9
1.4
17.5
11.5
-
-
dB
-
-
2007-04-20
3
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