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查询BFG196供应商
NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents from
BFG196
4
20 mA to 80 mA
Power amplifier for DECT and PCN Systems
fT = 7.5 GHz
1
F = 1.5 dB at 900 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFG196 BFG196 1 = E 2 = B 3 = E 4 = C
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Symbol Value Unit
CEO
CES
CBO
12 V
20
20
3
2
VPS05163
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
90 °C
S
1)
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
C
B
P
R
EBO
tot
j
A
st
thJS
2
100 mA
12
800 mW
150 °C
-65 ... 150
-65 ... 150
75
K/W
Jun-27-20011
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFG196
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
V
= 20 V, VBE = 0
CE
Collector-base cutoff current
V
= 10 V, IE = 0
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 50 mA, VCE = 8 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12 - - V
- - 100 µA
- - 100 nA
- - 1 µA
50 100 200 -
Jun-27-20012
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