INFINEON BFG193 User Manual
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查询BFG193供应商
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz
BFG193
4
F = 1.3 dB at 900 MHz
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFG193 BFG193 1 = E 2 = B 3 = E 4 = C
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Symbol Value Unit
CEO
CES
CBO
SOT223
12 V
20
20
3
2
VPS05163
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
87 °C
S
1)
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
C
B
P
R
EBO
tot
j
A
st
thJS
2
80 mA
10
600 mW
150 °C
-65 ... 150
-65 ... 150
105
K/W
Jun-27-20011
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFG193
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
V
= 20 V, VBE = 0
CE
Collector-base cutoff current
V
= 10 V, IE = 0
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 30 mA, VCE = 8 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
12 - - V
- - 100 µA
- - 100 nA
- - 1 µA
50 100 200 -
Jun-27-20012
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