INFINEON BFG 135A User Manual
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NPN Silicon RF Transistor
For low-distortion broadband amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
BFG 135A
4
70 mA to 130 mA
Power amplifiers for DECT and PCN systems
Integrated emitter ballast resistor
fT = 6 GHz
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFG 135A BFG135A 1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Symbol Value Unit
CEO
CES
CBO
15 V
25
25
3
2
VPS05163
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation, TS 100 °C
F)
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
T
is measured on the collector lead at the soldering point to the pcb
S
C
B
P
R
EBO
tot
j
A
stg
thJS
2
150 mA
20
1 W
150 °C
-65 ... 150
-65 ... 150
50
K/W
Oct-26-19991
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BFG 135A
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
Collector-emitter cutoff current
V
= 25 V, VBE = 0
CE
Collector-base cutoff current
V
= 10 V, IE = 0
CB
Emitter-base cutoff current
= 1 V, IC = 0
V
EB
DC current gain
= 100 mA, VCE = 8 V
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
15 - - V
- - 100 µA
- - 50 nA
- - 1 µA
80 120 250 -
Oct-26-19992
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