INFINEON BF999 User Manual
查询BF999供应商
Silicon N-Channel MOSFET Triode
BF999
3
For high-frequency stages up to 300 MHz
preferably in FM applications
1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BF999 LBs 1 = G 2 = D 3 = S SOT23
Maximum Ratings
Parameter Symbol Value Unit
2
Drain-source voltage V
Drain current I
Gate-source peak current
Total power dissipation, TS 76 °C
P
Storage temperature T
Channel temperature T
Thermal Resistance
Channel - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
DS
D
I
tot
stg
ch
R
GSM
thchs
20 V
30 mA
10 mA
200 mW
-55 ... 150
150
370 K/W
°C
Nov-08-20021
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
BF999
Parameter
DC characteristics
Drain-source breakdown voltage
I
= 10 µA, - VGS = 4 V
D
Gate-source breakdown voltage
IGS = 10 mA, VDS = 0
Gate-source leakage current
VGS = 5 V, VDS = 0
Drain current
= 10 V, VGS = 0
V
DS
Gate-source pinch-off voltage
= 10 V, ID = 20 µA
V
DS
AC characteristics
Forward tranconductance
Symbol Values Unit
min. typ. max.
V
(BR)DS
V
(BR)GSS
I
GSS
I
DSS
- V
GS (p)
g
fs
20 - - V
6.5 - 12
- - 50 nA
5 - 18 mA
- - 2.5 V
14 16 -
mS
V
= 10 V, ID = 10 mA
DS
Gate input capacitance
V
= 10 V, ID = 10 mA, f = 1 MHz
DS
Reverse tranfer capacitance
V
= 10 V, ID = 10 mA, f = 1 MHz
DS
Output capacitance
V
= 10 V, ID = 10 mA, f = 1 MHz
DS
Power gain
V
= 10 V, ID = 10 mA, f = 200 MHz
DS
Noise figure
V
= 10 V, ID = 10 mA, f = 200 MHz
DS
C
C
C
G
F
gss
dg
dss
p
- 2.5 - pF
- 25 - fF
- 1 - pF
- 25 - dB
- 1 -
Nov-08-20022
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