Infineon BF998, BF998R Schematic

BF998...

thchs

Silicon N_Channel MOSFET Tetrode

• Short-channel transistor with high S / C quality factor

• For low-noise, gain-controlled input stage up to 1 GHz

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Package Pin Configuration Marking

BF998 BF998R

SOT143 SOT143R

1=S 1=D

2=D 2=S

3=G2 3=G1

4=G1 4=G2- -

-

MOs MRs

Maximum Ratings Parameter Symbol Value Unit

Drain-source voltage V Continuous drain current I Gate 1/ gate 2-source current ±I Total power dissipation

P

DS

D

G1/2SM

tot

12 V 30 mA 10

200

TS ≤ 76 °C, BF998, BF998R

Storage temperature T Channel temperature T

stg ch

-55 ... 150 150

°C

Thermal Resistance Parameter Symbol Value Unit

Channel - soldering point1), BF998, BF998R R

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

≤ 370

K/W

1

2006-02-08

BF998...

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Drain-source breakdown voltage

ID = 10 µA, V

= -4 V, V

G1S

G2S

= -4 V

Gate 1 source breakdown voltage

±I

= 10 mA, V

G2S

= VDS = 0

G2S

Gate2 source breakdown voltage

±I

= 10 mA, V

G2S

= VDS = 0

G2S

Gate 1 source leakage current

±V

G1S

= 5 V, V

= VDS = 0

G2S

Gate 2 source leakage current

±V

G2S

= 5 V, V

= VDS = 0

G2S

Drain current

VDS = 8 V, V

G1S

= 0 , V

G2S

= 4 V

Gate 1 source pinch-off voltage

VDS = 8 V, V

= 4 V, ID = 20 µA

G2S

Gate 2 source pinch-off voltage

VDS = 8 V, V

= 0 , ID = 20 µA

G1S

V

(BR)DS

±V

(BR)G1SS

±V

(BR)G2SS

±I

G1SS

±I

G2SS

I

DSS

-V

G1S(p)

-V

G2S(p)

12 - - V

8 - 12

- - 50 nA

5 9 15 mA

- 0.8 2.5 V

- 0.8 2

2

2006-02-08

BF998...

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Forward transconductance

VDS = 8 V, ID = 10 mA, V

G2S

Gate1 input capacitance

VDS = 8 V, ID = 10 mA, V

G2S

f = 10 MHz Gate 2 input capacitance

VDS = 8 V, ID = 10 mA, V

G2S

f = 10 MHz Feedback capacitance

VDS = 8 V, ID = 10 mA, V

G2S

f = 10 MHz Output capacitance

VDS = 8 V, ID = 10 mA, V

G2S

f = 10 MHz Power gain

VDS = 8 V, ID = 10 mA, V

G2S

f = 45 MHz

= 4 V

= 4 V,

g

C

G

fs

g1ss

g2ss

dg1

dss

p

20 24 - -

- 2.1 2.5 pF

- 1.2 - pF

- 25 - fF

- 1.1 - pF

-

28

-

dB

VDS = 8 V, ID = 10 mA, V f = 800 MHz

Noise figure

VDS = 8 V, ID = 10 mA, V f = 45 MHz VDS = 8 V, ID = 10 mA, V f = 800 MHz

Gain control range

VDS = 8 V, V

= 4 ...-2 V, f = 800 MHz

G2S

= 4 V,

F

∆G

p

3

-

20

-

2.8

1.8

40 50 -

dB

-

2006-02-08

Infineon BF998, BF998R Schematic [ru]