Infineon BF799W Schematic [ru]
BF799W
NPN Silicon RF Transistor
3
For linear broadband amplifier
application up to 500 MHz
SAW filter driver in TV tuners
1
VSO05561
Type Marking Pin Configuration Package
BF799W LKs 1 = B 2 = E 3 = C SOT323
Maximum Ratings
2
Parameter
Symbol Value Unit
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation
T
= 107 °C
S
P
Junction temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
R
CEO
CES
CBO
EBO
C
B
tot
j
stg
thJS
20 V
30
30
3
35 mA
10
280 mW
150 °C
-65 ... 150
155
K/W
Apr-15-20031
BF799W
A
Electrical Characteristics at T
= 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I
= 1 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Base-emitter breakdown voltage
I
= 10 µA, IC = 0
E
Collector-base cutoff current
V
= 20 V, IE = 0
CB
DC current gain
I
= 5 mA, VCE = 10 V
C
I
= 20 mA, VCE = 10 V
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
20 - - V
30 - -
3 - -
- - 100 nA
35
40
95
100
-
250
-
Collector-emitter saturation voltage
I
= 20 mA, IB = 2 mA
C
Base-emitter saturation voltage
I
= 20 mA, IB = 2 mA
C
AC characteristics
Transition frequency
I
= 5 mA, VCE = 10 V, f = 100 MHz
C
= 20 mA, VCE = 8 V, f = 100 MHz
I
C
Output capacitance
V
= 10 V, IE = 0 mA, f = 1 MHz
CB
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
Noise figure
V
CEsat
V
BEsat
f
T
C
ob
C
cb
C
ce
- 0.1 0.3 V
- - 0.95
-
-
800
1100
MHz
-
-
- 0.96 - pF
- 0.7 -
- 0.28 -
F - 3 - dB
= 5 mA, VCE = 10 V, f = 100 MHz,
I
C
Z
= 50
S
Output conductance
I
= 20 mA, VCE = 10 V, f = 35 MHz
C
g
22e
- 60 -
S
Apr-15-20032
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