Infineon BF775W Schematic [ru]
BF 775W
NPN Silicon RF Transistor
3
Especially suitable for TV-sat and UHF tuners
1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
2
BF 775W LOs 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation, TS 86 °C
F)
Junction temperature T
Ambient temperature T
Storage temperature T
Symbol Value Unit
15 V
20
20
2.5
30 mA
4
280 mW
150 °C
-65 ... 150
-65 ... 150
C
B
P
CEO
CES
CBO
EBO
tot
j
A
stg
Thermal Resistance
thJS
230
K/WJunction - soldering point R
1
T
is measured on the collector lead at the soldering point to the pcb
S
1 Oct-26-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BF 775W
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
V
= 20 V, VBE = 0
CE
Collector-base cutoff current
V
= 10 V, IE = 0
CB
Emitter-base cutoff current
= 2.5 V, IC = 0
V
EB
= 15 mA, VCE = 8 V
I
C
Symbol UnitValues
V
(BR)CEO
CES
I
CBO
EBO
h
FE
- - 10I
- - 100 nA
40 100DC current gain
- - V15
max.min. typ.
µACollector-emitter cutoff current
µA100--I
200 -
2 Oct-26-1999
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