Infineon BF770A Schematic [ru]
NPN Silicon RF Transistor
BF 770A
For IF amplifiers in TV-sat tuners
and for VCR modulators
1
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BF 770A LSs 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
3
Parameter
Symbol Value Unit
2
VPS05161
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation, TS 63 °C
F)
Junction temperature T
Ambient temperature T
Storage temperature T
Thermal Resistance
C
B
P
CEO
CES
CBO
EBO
tot
j
A
stg
thJS
12 V
20
20
2
50 mA
6
300 mW
150 °C
-65 ... 150
-65 ... 150
290
K/WJunction - soldering point R
1
T
is measured on the collector lead at the soldering point to the pcb
S
1 Oct-26-1999
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BF 770A
Parameter
DC characteristics
Collector-emitter breakdown voltage
= 1 mA, IB = 0
I
C
V
= 20 V, VBE = 0
CE
Collector-base cutoff current
V
= 10 V, IE = 0
CB
Emitter-base cutoff current
= 2 V, IC = 0
V
EB
= 30 mA, VCE = 8 V
I
C
Symbol UnitValues
V
(BR)CEO
CES
I
CBO
EBO
h
FE
- - 100I
- - 100 nA
50 100DC current gain
- - V12
max.min. typ.
µACollector-emitter cutoff current
µA10--I
200 -
2 Oct-26-1999
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