Infineon BF517 Schematic [ru]
NPN Silicon RF Transistor
BF 517
For amplifier and oscillator
applications in TV-tuners
1
Type Marking Pin Configuration Package
BF 517 LRs 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
3
Parameter
Symbol UnitValue
2
VPS05161
Collector-emitter voltage 15V
Collector-base voltage V
Emitter-base voltage 2.5V
Collector current mA
Peak collector current, f 10 MHz
Total power dissipation, TS 55 °C
F)
Junction temperature T
Ambient temperature T
Storage temperature T
C
I
CM
P
CEO
CBO
EBO
tot
j
A
stg
20
25I
50
280 mW
150 °C
-65 ... 150
-65 ... 150
V
Thermal Resistance
Junction - soldering point
R
thJS
340
K/W
1
T
is measured on the collector lead at the soldering point to the pcb
S
Oct-26-19991
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
BF 517
Parameter
DC characteristics
I
= 1 mA, IB = 0
C
Collector-base cutoff current
V
= 15 V, IE = 0
CB
I
= 5 mA, VCE = 10 V
C
I
= 10 mA, IB = 1 mA
C
AC characteristics
= 5 mA, VCE = 10 V, f = 200 MHz
I
C
Collector-base capacitance
= 5 V, f = 1 MHz
V
CB
V
(BR)CEO
I
CBO
FE
V
CEsat
T
cb
ValuesSymbol Unit
max.typ.min.
15 -Collector-emitter breakdown voltage
- - nA50
-25h
- 0.1 0.5
21f
0.55
0.750.3 pFC
- V
250
-
-DC current gain
VCollector-emitter saturation voltage
GHzTransition frequency
= 5 V, f = 1 MHz
V
CE
= 0.5 V, IC = 0 , f = 1 MHz
V
EB
= 5 V, VBE = 0 , f = 1 MHz
V
CE
= 5 mA, VCE = 10 V, f = 100 MHz,
I
C
Z
S
= 75
C
ce
ibo
obs
0.25-Collector-emitter capacitance
1.45-
-Output capacitance
0.8
0.4C
-Input capacitance
-C
-F 2.5-Noise figure
dB
Oct-26-19992
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