Infineon BF1005 Schematic [ru]
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
BF 1005
3
input stages up to 1GHz
Operating voltage 5V
Integrated stabilized bias network
AGC
HF
Input
G2
G1
GND
Drain
HF Output
+DC
EHA07215
4
1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BF 1005 MZs 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter Symbol Value Unit
V
DS
Continuos drain current
Gate 1/gate 2 peak source current 10
Total power dissipation, TS 76 °C
Storage temperature °C-55 ... 150
I
D
±I
G1/2SM
+V
G1SE
P
tot
T
stg
T
ch
8Drain-source voltage V
3Gate 1 (external biasing) V
200
150Channel temperature
mA25
mW
2
Thermal Resistance
R
thchs
370
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 May-05-1999
K/WChannel - soldering point
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BF 1005
Parameter
DC characteristics
Drain-source breakdown voltage
I
= 650 µA, V
D
G1S
= 0 V, V
G2S
= 0 V
Gate 1 - source breakdown voltage
+I
= 10 mA, V
G1S
= 0 V, VDS = 0 V
G2S
Gate 2 source breakdown voltage
±I
= 10 mA, V
G2S
= 0 V, VDS = 0 V
G1S
Gate 1 source current
V
G1S
= 6 V, V
G2S
= 0 V
Gate 2 source leakage current
±V
V
G2S
DS
= 8 V, V
= 5 V, V
G1S
= 0 V, VDS = 0 V
G1S
= 0 , V
G2S
= 4.5 V
Symbol Values Unit
min. typ. max.
V
(BR)DS
+V
(BR)G1SS
±V
(BR)G2SS
+I
G1SS
±I
G2SS
I
DSS
-12
8
- 12
- 138
- 100 µA-
-- nA50
- 1.5 mA-Drain current
V-
V
= 5 V, V
DS
V
= 5 V, ID = 100 µA
DS
G2S
= 4.5 V
AC characteristics
Forward transconductance (self biased)
V
= 5 V, V
DS
G2S
= 4.5 V
Gate 1-input capacitance (self biased)
V
= 5 V, V
DS
= 4 V, f = 1 MHz
G2S
Output capacitance (self biased)
V
= 5 V, V
DS
= 4 V, f = 100 MHz
G2S
Power gain (self biased)
V
= 5 V, V
DS
= 4 V, f = 800 MHz
G2S
Noise figure (self biased)
V
= 5 V, V
DS
= 4 V, f = 800 MHz
G2S
I
DSO
V
G2S(p)
g
fs
C
g1ss
C
dss
G
ps
F
800
8 10Operating current (selfbiased)
-
- 1 - VGate 2-source pinch-off voltage
- 24 - mS
- 2.1 2.5 pF
- 1.3 -
- 19 - dB
- 1.4 -
Gain control range (self biased)
V
= 5 V, VG2S = 4 ... 0, f = 800 MHz
DS
G
ps
40 50 -
2 May-05-1999
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